S5493-01 HAMAMATSU | Alldatasheet

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Technical content

Features

/K6C S5493-01, S5627-01: Visible range (Filterless type) /K6C S4797-01, S6931 : Visible to near IR range /K6C S2833-01, S4011-04: Visible to infrared range

Applications

/K6C Exposure meter /K6C Illuminometer /K6C Camera auto exposure /K6C Stroboscope light control /K6C Copier /K6C Display light control /K6C Optical switch PHOTODIODE Si photodiode Photodiodes molded into clear plastic packages I General ratings / Absolute maximum ratings Absolute maximum ratings Active area size Effective active area Reverse voltage VR Max. Operating temperature Topr Storage temperature Tstg Type No. Dimensional outline/ Window material * (mm) (mm 2) (V) (°C) (°C) S5493-01 ➀ /R 2.4 × 2.8 6.6 S5627-01 ➁ /R 1.3 × 1.3 1.6 S6931 ➂ /R 2.4 × 2.8 6.6 S4797-01 ➃ /R 1.3 × 1.3 1.6 S2833-01 ➄ /R 2.4 × 2.8 6.6 S4011-04 ➅ /R 1.3 × 1.3 1.6 10 -25 to +85 -40 to +100 * Window material R: clear resin coating I Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Photo sensitivity S (A/W) Shunt resistance Rsh VR=10 mV Spectral response range λ Peak sensitivity wavelength λp λp GaP LED He-Ne Laser Infrared sensitivity ratio Short circuit current Isc 100 lx Temp. coefficient of Isc Dark current ID VR=1 V Max. Temp. coefficient of ID TCID Rise time tr VR=0 V RL=1 k Ω Terminal capacitance Ct VR=0 V f=10 kHz Type No. (nm) (nm) 560 nm633 nm (%) (µA) (%/°C) (pA) (times/° C) (µs) (pF) Min. (GΩ ) Typ. (GΩ ) S5493-01 1.0 100 10 3000 0.1 1 S5627-01 320 to S4797-01 320 to 1000 720 0.4 0.37 1.2 20 0.2 50 50 S2833-01 6.5 2.5 700 100 S4011-04 320 to 1100 960 0.58 0.33 0.38 1.9 0.1 1.12 0.5 200 250

Si photodiode S5493-01, etc. 10 fA 100 fA 1 pA 10 pA 100 pA 1 nA 0.01 0.1 1 10 REVERSE VOLTAGE (V) DARK CURRENT (Typ. Ta=25 ˚C) S4011-04 S4797-01 S6931 S2833-01 S5493-01 S5627-01 0.1 0.2 0.3 0.4 0.7 200 400 600 800 1000 WAVELENGTH (nm) PHOTO SENSITIVITY (A/W) (Typ. Ta=25 ˚C) 0.5 0.6 S4797-01 S2833-01 S4011-04 S5493-01 S5627-01 S6931 10 ns 100 ns 1 µs 10 µs 100 µs 1 ms 102 103 104 105 LOAD RESISTANCE (Ω ) RISE TIME (Typ. Ta=25 ˚C, VR =0 V) S6931 S4011-04 S2833-01 S4797-01 S5627-01 S5493-01 100 kΩ 1 MΩ 10 MΩ 100 MΩ 1 GΩ 10 TΩ -20 0 20 40 60 AMBIENT TEMPERATURE (˚C) SHUNT RESISTANCE 10 GΩ 100 GΩ

1 TΩ S2833-01

(Typ. VR =10 mV) I Rise time vs. load resistance KSPDB0129EB KSPDB0130EC KSPDB0131EB KSPDB0132EB I Spectral response I Dark current vs. reverse voltage I Shunt resistance temperature characteristics

Si photodiode S5493-01, etc. 4.1 ± 0.2 (INCLUDING BURR) 4.0 * 5.2 ± 0.2 0.25 10˚ 7.5 ± 5˚ 4.5 ± 0.4 5.0 ± 0.2 (INCLUDING BURR) 4.7 * 10˚ 4.8 * 2.54 0.5 0.6 1.8 0.8 0.4 NC CATHODE ANODE CATHODE PHOTOSENSITIVE SURFACE Chip position accuracy with respect to the package dimensions marked * X, Y ≤ ±0.2 θ ≤ ±2˚ NC CATHODE ANODE CATHODE 4.6 ± 0.2 (INCLUDING BURR) (1.0)(1.0) 14.5 ± 0.3 (0.8) 0.7 0.5 5.6 ± 0.2 (INCLUDING BURR) 0.3 MAX.0.3 MAX. 1.00.25 2.0 5.4 * 10˚ 5.5 * 2.54 (0.8)0.6 PHOTOSENSITIVE SURFACE Chip position accuracy with respect to the package dimensions marked * X, Y ≤ ±0.2 θ ≤ ±2˚ ➂ S6931 ➃ S4797-01 ➀ S5493-01 ➁ S5627-01 I I I I I Dimensional outlines (unit: mm, tolerance unless otherwise noted: ±0.1 mm) 4.6 ± 0.2 (INCLUDING BURR) 4.5 * 5.6 ± 0.2 (INCLUDING BURR) 5.4 * ˚ 3˚ 5.5 * PHOTOSENSITIVE SURFACE 0.6 1.0 2.0 CATHODE SUB ANODE SUB (SHORT LEAD) 5.75 ± 0.2 Chip position accuracy with respect to the package dimensions marked * X, Y ≤ ±0.2 θ ≤ ±2˚ SUB terminal should be open-circuited at use. 2.54 0.5 0.7 0.25 7.5 ± 5˚ 4.5 ± 0.4 1.0 ± 0.4 ( PIN LEAD) KSPDA0118EA KSPDA0119EA KSPDA0121EAKSPDA0122EA 0.25 7.5 ± 5˚ 4.5 ± 0.4 2.54 0.5 0.6 4.1 ± 0.2 (INCLUDING BURR) 4.0 * 5.0 ± 0.2 (INCLUDING BURR) 4.7 * 4.8 * 0.4 0.8 1.8 CATHODE SUB ANODE SUB (SHORT LEAD) 10˚ 5.2 ± 0.2 PHOTOSENSITIVE SURFACE Chip position accuracy with respect to the package dimensions marked * X, Y ≤ ±0.2 θ ≤ ±2˚ SUB terminal should be open-circuited at use. 1.6 ± 0.4 ( PIN LEAD)

Si photodiode S5493-01, etc. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2003 Hamamatsu Photonics K.K. NC CATHODE ANODE CATHODE 4.6 ± 0.2 (INCLUDING BURR) (1.0)(1.0) 14.5 ± 0.3 (0.8) 0.7 0.5 5.6 ± 0.2 (INCLUDING BURR) 0.3 MAX.0.3 MAX. 1.00.25 2.0 5.4 * 10˚ 5.5 * 2.54 (0.8)0.7 PHOTOSENSITIVE SURFACE Chip position accuracy with respect to the package dimensions marked * X, Y ≤ ±0.2 θ ≤ ±2˚ ➄ S2833-01 ➅ S4011-04 KSPDA0163EAKSPDA0123EA Cat. No. KSPD1025E02 Dec. 2003 DN4 5.0 ± 0.2 (INCLUDING BURR) 4.7 * 10˚ 4.8 * 0.5 0.6 2.54 1.8 0.8 10˚ 7.0 ± 0.3 0.25 0.1 ± 0.1 PHOTOSENSITIVE SURFACE 4.0 * 4.1 ± 0.2 (INCLUDING BURR) ANODE CATHODE NC CATHODE Chip position accuracy with respect to the package dimensions marked * X, Y ≤ ±0.2 θ ≤ ±2˚