S4402 HAMAMATSU | Alldatasheet
Document overview
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Technical content
Features
/K6C Uniform element characteristics Quadrant format on one chip with φ1 mm active area ensures uniform characteristics between elements. /K6C Single power supply operation Allows easy and simple operation.
Applications
/K6C Low-light-level detection /K6C Laser beam positioning PHOTODIODE Si APD φ1 mm quadrant APD S4402 I General ratings Parameter Symbol Value Unit Window material - Borosilicate glass - Active area size A φ1 mm/4 mm Effective active area - 0.17 (per 1 element) mm 2 I Absolute maximum ratings Parameter Symbol Value Unit Operating temperature Topr -20 to +60 °C Storage temperature Tstg -55 to +100 °C I Electrical and optical characteristics (Ta=25 °C) Parameter Symbol Condition Min. Typ. Max. Unit Spectral response range λ - 400 to 1000 - nm Peak sensitivity wavelength λp M=100 - 800 - nm Photo sensitivity S λ=800 nm, M=1 -0 . 5- A / W Quantum efficiency QE λ=800 nm, M=1 - 75 - % Breakdown voltage V BR IR=100 µA - 150 200 V Temperature coefficient of VBR - 0.65 - V/°C Dark current I D M=100 - 0.4 2.0 nA Cut-off frequency fc M=100, λ=800 nm RL=50 Ω , -3 dB - 310 - MHz Terminal capacitance Ct M=100, f=1 MHz - 8 - pF Excess noise figure x M=50, f=10 kHz
HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2005 Hamamatsu Photonics K.K. Si APD S4402 Cat. No. KAPD1002E02 Mar. 2005 DN 0.07 DETAILS OF ACTIVE AREA (DESIGN DIMENSION) CASE GND 0.07 13 4.6 ± 0.2 1.3 0.45 LEAD STAND OFF 8.2 ± 0.1 PHOTOSENSITIVE SURFACE 9.2 ± 0.2 3.5 5.8 WINDOW 3.0 MIN. 0.8 (Ta=25 ˚C, λ=800 nm, M=100) 0.1 POSITION (µm) RELATIVE SENSITIVITY (%) 600200 400 800 1000 1200 100 (Typ. Ta=25 ˚C, f=1 MHz) 1 pF 10-2 REVERSE VOLTAGE (V) TERMINAL CAPACITANCE 10010-1 101 102 103 10 pF 100 pF 1 nF 0 50 100 150 200 10-1 100 101 102 103 REVERSE VOLTAGE (V) GAIN (Typ. Ta=25 ˚C) (Typ. Ta=25 ˚C) 200 WAVELENGTH (nm) PHOTO SENSITIVITY (A/W) 400 600 800 1000 0.1 0.2 0.3 0.4 0.5 0.6 0.7 I Dimensional outline (unit: mm) KAPDA0021EA I Spectral response KAPDB0046EA I Dark current vs. reverse voltage KAPDB0047EA (Typ. Ta=25 ˚C) 10 pA REVERSE VOLTAGE (V) DARK CURRENT 50 100 150 200 100 pA 1 nA 10 nA 100 nA I T erminal capacitance vs. reverse voltage KAPDB0048EA I Gain vs. reverse voltage KAPDB0049EA I Cross-talk example KAPDB0050EA