S4282-51

S4282-51 HAMAMATSU | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 4

Technical content

Features

/K6C Large allowable background light level S4282-51, S6986, S10053: 10000 lx Typ. S6809, S6846, S7136/-10 : 3000 lx Typ. /K6C Minimum detection level S4282-51, S6986, S10053: 0.7 µW/mm2 Typ. S6809, S6846, S7136/-10 : 0.2 µW/mm2 Typ. /K6C Digital output (Output appears “L” by light input.) /K6C Small hysteresis (S6809) /K6C Small SMD package (S10053)

Applications

/K6C Paper detection in office machine (copiers, fax machines, etc.) /K6C Optical switch PHOTO IC Light modulation photo IC Fewer detection errors even under disturbance background light S4282-51, S6809, S6846, S6986, S7136/-10, S10053 These light modulation photo ICs were developed for optical synchronous detection under disturbance background light. A photodiode, preamplifier, comparator, oscillator, LED driver and signal processing circuit, etc. are all integrated on a monolithic photo IC chip. Optical synchronous type photoreflectors and photointerrupters, which less susceptible to disturbance background light, can be easily configured by just connecting an external LED to this photo IC. Our unique circuit design achieves an allowable background light level of 10000 lx Typ. (S4282-51, S6986, S10053) and a minimum detection level of 0.2 µW/mm2 Typ. (S6809, S6846, S7136/-10). I Absolute maximum ratings (Ta=25 °C) Parameter Symbol S4282-51, S6986, S10053 S6809, S6846, S7136/-10 Unit Supply voltage Vcc -0.5 to +16 V Output voltage Vo -0.5 to +16 V Output current Io 50 mA Cathode output voltage Vcath -0.5 to +16 V Cathode output current Icath 70 mA Power dissipation *1 P 250 mW Operating temperature Topr -25 to +60 °C Storage temperature Tstg -40 to +100 °C *1: Derate power dissipation at a rate of 3.3 mW/°C above Ta=25 °C I Spectral response (typical example) 400 600 800 1000 1200 WAVELENGTH (nm) 100 RELATIVE SENSITIVITY (%) (Ta=25 ˚C) 400 600 800 1000 12000 100 (Ta=25 ˚C) WAVELENGTH (nm) RELATIVE SENSITIVITY (%) KPICB0001EB KPICB0002EA S4282-51, S6986, S10053 S6809, S6846, S7136/-10

Light modulation photo IC S4282-51, S6809, S6846, S6986, S7136/-10, S10053 I Electrical and optical characteristics (Ta=25 °C, Vcc=5 V) S4282-51, S6986, S10053 S6809, S6846, S7136 /-10 Output: built-in pull-up resistor *2 Cathode: constant current drive Output: open collector *3 Cathode: open collector drive Parameter Symbol Condition Unit Supply voltage Vcc 4.5 - 16 4.5 - 16 V Current consumption Icc Vo, LED terminals open - 4 11 - 4 11 mA Low level output voltage VOL I OL=16 mA - 0.2 0.4 - 0.2 0.4 V 4.9 - - V Output High level output voltage VOH 4.7 k Ω between Vcc and Vo 4.9 - - V Low level output voltage Vcath Icath=40 mA - - 0.8 V Low level output current Icath Vcath=1.2 V 15 35 60 mA Pulse cycle Tp 65 130 220 65 130 220 µs Cathode Pulse width Tw 4 8 13.7 4 8 13.7 µs H→ L Threshold light level EHL λ=940 nm No background light - 0.7 2 - 0.2 1.0 µW/mm2 0.45 0.65 0.95 Hysteresis - 0.45 0.65 0.95 0.65 (S6809) 0.8 (S6809) 0.95 (S6809) Frequency response f 0.5 1.25 - 0.5 1.25 - kHz Allowable background light level Ex Signal light: 5 µ W/ mm 2 λp=940 nm Background light: “A” light source 5000 10000 - 2000 3000 - lx Vcc CATHODE (LED) GND Vcc Vout GND Cathode Output 10 k *2: *3: Vcc CATHODE (LED) GND Vcc Vout GND Cathode Output KPICC0009EA KPICC0010EA CONSTANT VOLTAGE BUFFER SIGNAL PROCESSING CIRCUIT TIMING GENERATOR OSCILLATOR LED DRIVER OUTPUT CIRCUIT GND CATHODE (LED) Vout Vcc COMPARATOR PREAMP PD Vref TRUTH TABLE INPUT OUTPUT LEVEL LIGHT ON LIGHT OFF LOW HIGH I Block diagram and internal functions(a) Oscillator and timing signal generator The oscillator produces a reference oscillation output by charging and discharging the built-in capacitor with constant current. The oscillation output is fed to the timing signal generator, which then creates LED drive pulses and various timing pulses for digital signal processing. (b) LED driver circuit This circuit drives an external LED using the LED drive pulses created by the timing signal generator. The duty cycle is 1/16. (c) Photodiode and preamplifier circuit The photodiode is formed on the same monolithic chip. A photocurrent generated in the photodiode is converted to a voltage by a preamplifier circuit. The preamplifier circuit uses an AC amplifier to expand the dynamic range versus DC or low-frequency background light, without impairing signal detection sensitivity. (d) Capacitive coupling, buffer amplifier and reference voltage generator Capacitive coupling removes low-frequency noise and also cancels the DC offset in the preamplifier. The buffer amplifier boosts the signal up to the comparator level, and the reference voltage generator produces a comparator level voltage. (e) Comparator circuit The comparator circuit has a hysteresis function to prevent chattering caused by small fluctuations in the input light. (f) Signal processing circuit The signal processing circuit consists of a gate circuit and digital integrator circuit. The gate circuit discriminates input pulses during synchronous detection, to prevent op- erational errors caused by asynchronous background light. Background light which is synchronized with the signal detection timing cannot be eliminated by the gate circuit, but is canceled out by the digital integrator circuit at the latter stage. (g) Output circuit This circuit serves as an output buffer for the signal processing circuit and outputs the signal to an external circuit. KPICC0002EA

Light modulation photo IC S4282-51, S6809, S6846, S6986, S7136/-10, S10053 5.2 ± 0.3 (INCLUDING BURR) CENTER OF ACTIVE AREA 5.2 ± 0.3 (INCLUDING BURR) (SPECIFIED AT THE LEAD ROOT) PHOTOSENSITIVE SURFACE Vout GND CATHODE (LED) Vcc 2.0 (DEPTH 0.15 MAX.) 1.0 (DEPTH 0.15 MAX.) 2.5 ± 0.2 5.0 2.05 ± 0.2 16.5 ± 1.0 (0.8) (1.0) 1.27 1.27 1.27 10˚ 0.7 ± 0.15 10˚ 0.25 +0.15 -0.1 0.55 0.45 1.0 2.0 Tolerance unless otherwise noted: ±0.1, ±2˚ Shaded area indicates burr. Values in parentheses are not guaranteed, but for reference. 5.0 KPICA0008EC I Dimensional outlines (unit: mm) S6809, S6846, S6986 KPICA0009EB S4282-51, S7136 0.5 4.6 ± 0.2 (INCLUDING BURR) CENTER OF ACTIVE AREA 4.5 * 0.7 3.1 ± 0.4 1.0 2.0 5.4 * 2.54 5.5 5.6 ± 0.2 (INCLUDING BURR) 10˚ 5.75 ± 0.2 0.7 ± 0.15 PHOTOSENSITIVE SURFACE 4.5 ± 0.4 4.5 * 7.5 ± 5˚ 0.25 CATHODE (LED) Vcc Vout GND (SHORT LEAD) Tolerance unless otherwise noted: ±0.1, ±2˚ Shaded area indicates burr. Chip position accuracy with respect to the package dimensions marked * X≤±0.2 Y≤±0.2 2.0 (DEPTH 0.15 MAX.)

HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K. Light modulation photo IC S4282-51, S6809, S6846, S6986, S7136/-10, S10053 Cat. No. KPIC1002E06 Jul. 2007 DN S7136-10 KPICA0034EB Tolerance unless otherwise noted: ±0.1, ±2˚ Shaded area indicates burr. Chip position accuracy with respect to package dimensions marked * X≤±0.2 Y≤±0.2 4.6 ± 0.2 (INCLUDING BURR) CENTER OF ACTIVE AREAINDEX MARK 0.6 0.5 2.54 5.6 ± 0.2 (INCLUDING BURR) 5.4 * 10˚ 5.5 * 0.7 ± 0.15 1.0 2.07.5 ± 0.3 0.25 0.1 ± 0.1 CATHODE (LED) Vcc Vout GND PHOTOSENSITIVE SURFACE 0.3 0.4 4.1 Max. (INCLUDING BURR) 5.0 ± 0.3 * 2.8 2.4 2.9 1.3 0.75 0.5 0.05 3.0 * 0.8 4.2 ± 0.2 (INCLUDING BURR) 3.8 3.4 MIRROR AREA RANGE 0.80.80.8 3.9 4.0 * CENTER OF ACTIVE AREA 0.15 0.1 ± 0.1 Vout (GND) (GND) (GND) GND CATHODE (LED) (GND) (GND) (SHORT LEAD) (GND) Vcc MIRROR AREA RANGE (GND) terminals should be connected to GND terminal on board. Tolerance unless otherwise noted: ±0.1 Shaded area indicates burr. Chip position accuracy with respect to the package dimensions marked * X≤±0.2 Y≤±0.2 PHOTOSENSITIVE SURFACE S10053 KPICA0076EB