S3954

S3954 HAMAMATSU | Alldatasheet

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Technical content

Features

/K6C High UV sensitivity: QE 75 % (λ=200 nm) /K6C Half pitch 78-lead DIP /K6C Element size: 3.175 × 0.3175 mm /K6C Entire active area: 3.175 × 25.6875 mm /K6C Element pitch: 0.3425 mm

Applications

/K6C Spectrophotometers PHOTODIODE 76-element Si photodiode array High UV sensitivity photodiode array mounted in DIP S3954 I Absolute maximum ratings Parameter Symbol Value Unit Reverse voltage V R Max. 5 V Operating temperature Topr -20 to +60 °C Storage temperature Tstg -20 to +80 °C I Electrical and optical characteristics (Ta=25 °C) Parameter Symbol Condition Min. Typ. Max. Unit Spectral response range λ - 190 to 1100 - nm Peak sensitivity wavelength λp - 960 - nm λ=200 nm -0 . 1 0- λ=633 nm -0 . 4 3-Photo sensitivity S λ=λp -0 . 5 8- A/W Dark current ID per 1 element VR=10 mV - 0.1 30 pA Temperature coefficient of dark current TCID - 1.12 - times/°C Rise time tr VR=0 V, RL=1 kΩ λ=655 nm - 0.4 - µs Terminal capacitance Ct per 1 element VR=0 V, f=10 kHz - 150 - pF Noise equivalent power NEP VR=0 V, λ=λp - 7.0 × 10-16 - W/Hz1/2

76-element Si photodiode array S3954 HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. 3.175 0.3175 0.0250.025 WAVELENGTH (nm) PHOTO SENSITIVITY (A/W) 190 400 600 800 1000 1200 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 (Typ. Ta=25 ˚C) QE=100 % QE=50 % 10 fA REVERSE VOLTAGE (V) DARK CURRENT 0.01 0.1 1 10 100 fA 1 pA 10 pA 100 pA (Typ. Ta=25 ˚C) 10 pF REVERSE VOLTAGE (V) TERMINAL CAPACITANCE 0.01 0.1 1 10 100 pF 1 nF (Typ. Ta=25 ˚C) P 1.27 × 38 = 48.26 CH 1 3.175 ACTIVE AREA 25.6875 50.8 ± 0.6 15.5 ± 0.3 404177 21 3938 2.8 ± 0.3 1.27 0.46 CH 7678 (4.5) 15.11 ± 0.25 PIN No. 15.24 ± 0.25* 1.48 ± 0.2 0.25 PHOTOSENSITIVE SURFACE Cat. No. KMPD1041E02 Aug. 2006 DN I T erminal capacitance vs. reverse voltageI Spectral response KMPDB0130EA KMPDB0131EA I Dark current vs. reverse voltage KMPDB0132EA I Dimensional outline (unit: mm) KMPDA0115EA I Details of elements (unit: mm) KMPDA0116EA I Pin connection Pin No. Element No. Pin No. Element No. 1K C 4 0 K C 2 2 41 75 3 4 42 73 4 6 43 71 5 8 44 69 6 10 45 67 71 2 4 6 6 5 8 14 47 63 91 6 4 8 6 1 10 18 49 59 11 20 50 57 12 22 51 55 13 24 52 53 14 26 53 51 15 28 54 49 16 30 55 47 17 32 56 45 18 34 57 43 19 36 58 41 20 38 59 39 21 40 60 37 22 42 61 35 23 44 62 33 24 46 63 31 25 48 64 29 26 50 65 27 27 52 66 25 28 54 67 23 29 56 68 21 30 58 69 19 31 60 70 17 32 62 71 15 33 64 72 13 34 66 73 11 35 68 74 9 36 70 75 7 37 72 76 5 38 74 77 3 39 76 78 1