S3590-08 HAMAMATSU | Alldatasheet

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Technical content

Features

/K6C Higher sensitivity and low dark current than conventional type /K6C Sensitivity matching with BGO and CsI (TI) scintillators /K6C High quantum efficiency: QE=85 % (λ=540 nm) /K6C Low capacitance /K6C High-speed response /K6C High stability /K6C Good energy resolution

Applications

/K6C Scintillation detectors /K6C Calorimeters /K6C Hodoscopes /K6C TOF counters /K6C Air shower counters /K6C Particle detectors, etc. PHOTODIODE Si PIN photodiode Large area sensors for scintillation detection S3590-08/-09 I General ratings / Absolute maximum ratings Absolute maximum ratings Active area Depletion layer thickness Type No. Window material (mm) (mm) Reverse voltage VR Max. Power dissipation P (mW) Operating temperature Topr (°C) Storage temperature Tstg (°C) S3590-08 Epoxy resin S3590-09 Window-less 10 × 10 0.3 100 100 -20 to +60 -20 to +80 I Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Photo sensitivity S Dark current ID λ=λp Type No. Spectral response range λ (nm) Peak sensitivity wavelength λp (nm) (A/W) LSO 420 nm (A/W) BGO 480 nm (A/W) CsI(Tl) 540 nm (A/W) Short circuit current Isc 100 lx (µA) Typ. (nA) Max. (nA) Temp. coefficient of ID TCID (times/°C) Cut-off Frequency fc (MHz) Te rm in a l capacitance Ct f= 1MHz (pF) NEP VR=70 V (W/Hz1/2) S3590-08 0.66 0.20 0.30 0.36 S3590-09 320 to * VR=70 V

Si PIN photodiode S3590-08/-09 HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K. 0.45 LEAD PHOTOSENSITIVE SURFACE ACTIVE AREA 5.0 ± 0.2 1.25 10 1.78 ± 0.2 0.7 10.0 10.0 WHITE CERAMIC 14.5 1.4 12.7 -0.5 -0.5 The coating resin may extend a maximum of 0.1 mm beyond the upper surface of the package. Cat. No. KPIN1052E06 Oct. 2007 DN WAVELENGTH (nm) PHOTO SENSITIVITY (A/W) 200 400 600 0.1 0.2 0.3 0.4 0.5 800 12001000 0.6 0.7 (Typ. Ta=25 ˚C) TEMPERATURE COEFFICIENT ( %/˚C ) 200 400 600 800 1000 +1.0 +0.5 (Typ.)+1.5 -0.5 WAVELENGTH (nm) REVERSE VOLTAGE (V) (Typ. Ta=25 ˚C, f=1 MHz) TERMINAL CAPACITANCE 10.1 10 pF 100 pF 10 nF 1 nF 10 100 1000 I Spectral response REVERSE VOLTAGE (V) DARK CURRENT 100 pA 0.1 1 10 1000 100 1 nA 10 nA 100 nA (Typ. Ta=25 ˚C) 10 nA 1 µA 10 pA 100 pA 1 nA 100 nADARK CURRENT (Typ. VR =70 V) AMBIENT TEMPERATURE (˚C) 06 0 8 0 20 40 I Dimensional outline (unit: mm) I Photo sensitivity temperature characteristic I Dark current vs. reverse voltageI Dark current vs. ambient temperatureI T erminal capacitance vs. reverse voltage KPINB0231EB KPINB0093ED KPINB0233EDKPINB0232EC KPINB0234EC KPINA0014EF KPINB0263EB WAVELENGTH (nm) PHOTO SENSITIVITY (A/W) 200 400 600 0.1 0.2 0.3 0.4 0.5 800 12001000 0.6 0.7 (Typ. Ta=25 ˚C) QE =100 % S3590-09S3590-08