S3204 HAMAMATSU | Alldatasheet

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Technical content

Features

/K6C Higher sensitivity and low dark current than conventional type /K6C Sensitivity matching with BGO and CsI (TI) scintillators /K6C High quantum efficiency QE=85 % (λ=540 nm) /K6C Low capacitance /K6C High-speed response /K6C High stability /K6C Good energy resolution

Applications

/K6C Scintillation detectors /K6C Calorimeters /K6C Hodoscopes /K6C TOF counters /K6C Air shower counters /K6C Particle detectors, etc. PHOTODIODE Si PIN photodiode Large area sensors for scintillation detection S3204/S3584 series S3204/S3584 series are large area Si PIN photodiodes having an epoxy resin window. These photodiodes are also available without window. I General ratings / Absolute maximum ratings Absolute maximum ratings Active area Depletion layer thicknessType No. Dimensional outline Window material (mm) (mm) Reverse voltage VR Max. Power dissipation P (mW) Operating temperature Topr (°C) Storage temperature Tstg (°C) S3204-05 Epoxy resin S3204-06 Window-less 0.5 150 S3204-08 Epoxy resin S3204-09 Window-less 18 × 18 0.3 100 S3584-05 Epoxy resin S3584-06 Window-less 0.5 150 S3584-08 Epoxy resin S3584-09 Window-less 28 × 28 0.3 100 100 -20 to +60 -20 to +80 I Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Photo sensitivity S Dark current ID VR=100 V λ=λp Type No. Spectral response range λ (nm) Peak sensitivity wavelength λp (nm) (A/W) LSO 420 nm (A/W) BGO 480 nm (A/W) CsI(Tl) 540 nm (A/W) Short circuit current Isc 100 lx (µA) Typ. (nA) Max. (nA) Temp. coefficient of ID TCID (times/° C) Cut-off Frequency fc VR=100 V -3 dB (MHz) Ter minal capacitance Ct f= 1MHz VR =100 V (pF) NEP VR=100 V (W/Hz1/2) S3204-05 0.62 0.19 0.25 0.3 S3204-08 0.66 0.20 0.3 0.36 S3584-05 0.62 0.19 0.25 0.3 S3584-08 0.66 0.20 0.3 0.36 S3584-09 320 to 1100 960 0.66 0.22 0.33 0.41 780 10 * 30 * 1.12 10 * 300 * 8.6 × 10 –1 4 * *1: VR=70 V

Si PIN photodiode S3204/S3584 series HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. I I I I I Dimensional outlines (unit: mm) ➀ S3204 series ➁ S3584 series 10 nA 10 µA 1 µA 1 pA 100 pA 1 nA 100 nA 10 pA DARK CURRENT (Typ.) AMBIENT TEMPERATURE (˚C) -20 60 80 02 0 4 0 S3584-05/-06 (VR =100 V) S3204-05/-06 (VR =100 V) REVERSE VOLTAGE (V) TERMINAL CAPACITANCE 10 pF 0.1 1 10 1000 100 100 pF 1 nF 10 nF (Typ. Ta=25 ˚C, f=1 MHz) S3584-08/-09 S3204-05/-06 S3204-08/-09 S3584-05/-06 TEMPERATURE COEFFICIENT ( % /˚C) 200 400 600 800 1000 +1.0 +0.5 (Typ.)+1.5 -0.5 WAVELENGTH (nm)WAVELENGTH (nm) PHOTO SENSITIVITY (A/W) 200 400 600 0.1 0.2 0.3 0.4 0.5 800 12001000 0.6 0.7 (Typ. Ta=25 ˚C) S3204/S3584-08 S3204/S3584-05 KPINA0040EB KPINA0041EB I Spectral response KPINB0227EA KPINB0093EC I Dark current vs. ambient temperature I Photo sensitivity temperature characteristic I Dark current vs. reverse voltage I Terminal capacitance vs. reverse voltage REVERSE VOLTAGE (V) DARK CURRENT 0.1 1 10 1000 100 100 pA 1 nA 100 nA 10 nA (Typ. Ta=25 ˚C) S3584-08/-09 S3204-05/-06 S3204-08/-09 S3584-05/-06 Cat. No. KPIN1051E05 Mar. 2006 DN KPINB0228EB KPINB0229EB KPINB0230EB WHITE CERAMIC ACTIVE AREA 0.45 LEAD 18.03.4 25.5 18.0 25.5 PHOTOSENSITIVE SURFACE 10 2.54 ± 0.2 a 5.0 ± 0.2 Type No. S3204-05/-06 1.0 1.2 a S3204-08/-09 1.75 -0.6 -0.6 WHITE CERAMIC 0.45 LEAD -0.8 -0.8 3.4 28.0 35.6 1.75 10 2.54 ± 0.2 28.0 ACTIVE AREA PHOTOSENSITIVE SURFACE 35.6 a 5.0 ± 0.2 Type No. S3584-05/-06 1.0 1.2 a S3584-08/-09 I Spectral response (without window) KPINB0264EA WAVELENGTH (nm) PHOTO SENSITIVITY (A/W) 200 400 600 0.1 0.2 0.3 0.4 0.5 800 12001000 0.6 0.7 (Typ. Ta=25 ˚C) S3204/S3584-09 S3204/S3584-06