S2ABF HDSEMI | Alldatasheet
Document overview
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- PDF pages: 4
Technical content
Features
o
- VRRM 50V-1000V
- High surge current capability
Applications
- Rectifier Marking Polarity: Color band denotes cathode Glass passivated chip ● S2ABF-S2MBF : S2AB-S2MB S2ABF THRU S2MBF Item Symbol Unit Test Conditions Repetitive Peak Reverse Voltage V RRM V 50 100 200 400 600 800 1000 Average Forward Current I F(AV) A 60HZ Half-sine wave, Resistance load, T L =100℃ 2.0 Surge(Non-repetitive)Forward Current I FSM A 60Hz Half-sine wave ,1 cycle , Ta =25℃ 50 Junction Temperature T J ℃ -55~+150 Storage Temperature T STG ℃ -55 ~ +150 Electrical Characteristics (Ta=25℃ Unless otherwise specified） Item Symbol Unit Test Condition Peak Forward Voltage V F V I F =2.0A 1.1 Peak Reverse Current I RRM1 μA V RM RRM Ta =25℃ 5.0 I RRM2 Ta =125℃ 125 Thermal Resistance(Typical) R θJ-A /W℃ Between junction and ambient 53 R θJ-L Between junction and terminal 16 35 70 140 280 420 560 700 Maximum RMS V RMS V Voltage ABF BBF DBF GBF JBF KBF MBF ABF BBF DBF GBF JBF KBF MBF
H igh Diode Semiconductor FIG.1: FORWARD CURRENT DERATING CURVE IO(A) 60Hz Resistive or Inductive Load (7.0mm×7.0mm)Copper Pad Areas TL( 70 90 110 130 150 0.5 1.0 1.5 2.0 2.5 3.0 3.5 IFSM(A) 周波数 Number of Cycles FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT TL=100 8.3ms Single Half Sine Wave 11 0 1 0 0 IF(A) FIG.3: TYPICAL FORWARD CHARACTERISTICS TJ=25 Pulse width=300us 1% Duty Cycle 0.01 0.1 1.0 0.5 VF(V) FIG.4 TYPICAL REVERSE CHARACTERISTICS Voltage(%) IR(uA) Tj=25 Tj=150 Tj=125 0.01 0 20 40 60 80 100 0.1 1.0 100 1000
H igh Diode Semiconductor SMBF SMBF 1.73(4.40) 1.65(4.20) 1.46(3.70) 1.38(3.50) 0.86(2.20) 0.75(1.90) 2.16(5.50) 2.00(5.10) .100(0.26) .007(0.18) .051(1.30) .043(1.10) Dimensions in inches and (millimeters) .040(1.00) 4.80 2.54 1.8
Reel Taping Specifications For Surface Mount Devices-SMBF H igh Diode Semiconductor 3.80 0.150 5.75 0.226