S2744 HAMAMATSU | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

Features

G Higher sensitivity and low dark current than conventional type G Sensitivity matching with BGO and CsI (TI) scintillators G High quantum efficiency QE=85 % (λ=540 nm) G Low capacitance G High-speed response G High stability G Good energy resolution

Applications

G Particle detectors, etc. PHOTODIODE Si PIN photodiode Large area sensors for scintillation detection S2744/S3588-08, -09 I General ratings / Absolute maximum ratings Absolute maximum ratings Active area Depletion layer thicknessType No. Dimensional outline Window material (mm) (mm) Reverse voltage VR Max. Power dissipation P (mW) Operating temperature Topr (°C) Storage temperature Tstg (°C) S2744-08 Epoxy resin S2744-09 ➀ Window-less 10 × 20 S3588-08 Epoxy resin S3588-09 ➁ Window-less 3 × 30 0.3 100 100 -20 to +60 -20 to +80 I Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Photo sensitivity S Dark current ID VR=70 V λ=λp Type No. Spectral response range λ (nm) Peak sensitivity wavelength λp (nm) (A/W) LSO 420 nm (A/W) BGO 480 nm (A/W) CsI(Tl) 540 nm (A/W) Short circuit current Isc 100 lx (µA) Typ. (nA) Max. (nA) Temp. coefficient of ID TCID (times/° C) Cut-off Frequency fc VR=70 V (MHz) Ter minal capacitance Ct f= 1MHz VR=70 V (pF) NEP VR=70 V (W/Hz 1/2 ) S2744-08 0.66 0.20 0.30 0.36 S2744-09 0.66 0.22 0.33 0.41 200 25 85 S3588-08 0.66 0.20 0.30 0.36 S3588-09 320 to 1100 960 0.66 0.22 0.33 0.41 90 31 01 . 1 2 40 40 4.7 × 10 -14

Si PIN photodiode S2744/S3588-08, -09 HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. I I I I I Dimensional outlines (unit: mm) ➀ S2744-08/-09 ➁ S3588-08/-09 10 nA 1 µA 1 pA 100 pA 1 nA 100 nA 10 pA DARK CURRENT (Typ. VR =70 V) AMBIENT TEMPERATURE (˚C) -20 60 80 02 0 4 0 REVERSE VOLTAGE (V) TERMINAL CAPACITANCE 10 pF 0.1 1 10 100 100 pF 1 nF 10 nF (Typ. Ta=25 ˚C, f=1 MHz) S2744-08/-09 S3588-08/-09 TEMPERATURE COEFFICIENT ( % /˚C) 200 400 600 800 1000 +1.0 +0.5 (Typ.)+1.5 -0.5 WAVELENGTH (nm)WAVELENGTH (nm) PHOTO SENSITIVITY (A/W) 200 400 600 0.1 0.2 0.3 0.4 0.5 800 1000 1200 0.6 0.7 (Typ. Ta=25 ˚C) S2744/S3588-08 S2744/S3588-09 KPINA0039EB KPINA0042EB I Spectral response KPINB0265EB KPINB0093EC I Dark current vs. ambient temperature I Photo sensitivity temperature characteristic I Dark current vs. reverse voltage I Terminal capacitance vs. reverse voltage REVERSE VOLTAGE (V) DARK CURRENT 1 pA 0.1 1 10 100 10 pA 100 pA 1 nA 10 nA (Typ. Ta=25 ˚C) Cat. No. KPIN1049E04 Mar. 2006 DN KPINB0220EA KPINB0221EA KPINB0222EB -0.4 -0.6 ɹ0.45 LEAD PHOTOSENSITIVE SURFACE 5.0 ± 0.2 2.5 10 2.0 ± 0.2 0.5 10.0 20.0 WHITE CERAMIC 2.0 14.2 27.0 ACTIVE AREA The coating resin may extend a maximum of 0.1 mm beyond the upper surface of the package. PHOTOSENSITIVE SURFACE ACTIVE AREA ɹ0.45 LEAD 3.0 30.01.2 5.8 34.0 10 1.52 ± 0.2 WHITE CERAMIC 0.45 2.5 ± 0.2 1.1 -0.4 -0.8 The coating resin may extend a maximum of 0.1 mm beyond the upper surface of the package.