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Parameter S2592-03 S3477-03 S2592-04 S3477-04 Unit Built-in photodiode S1336 series - Window material Sapphire glass - Photosensitive area 2.4 × 2.4 5.8 × 5.8 mm Package TO-8 TO-66 TO-8 TO-66 Absolute maximum ratings Parameter Symbol Value Unit Reverse voltage VR 5V Operating temperature Topr -40 to +70 °C Storage temperature Tstg -55 to +85 °C Allowable current for thermoelectric cooler Ite 1.5 A Thermistor power dissipation Pth 0.2 mW Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Typ. Ta=25 °C) Parameter Symbol Condition S2592-03 S3477-03 S2592-04 S3477-04 Unit Spectral response range λ 190 to 1100 nm Peak sensitivity wavelength λp 960 nm Photosensitivity S λ=λp 0.5 A/W Short circuit current Isc 100 lx, 2856 K 5 28 μA Dark current ID VR=10 mV 10 25 pA Temperature coefficient of dark current T CID 1.15 times/°C Rise time tr V R=0 V, RL=1 kΩ 0.2 1 μs Terminal capacitance Ct V R=0 V 65 380 pF Shunt resistance Rsh V R=10 mV 1 0.4 GΩ Noise equivalent power NEP VR=0 V, λ=λp 8.1 × 10-15 1.3 × 10-14 W/Hz1/2 Cooling temperature ∆T3 5 °C

Si photodiodes S2592/S3477 series Spectral response Shunt resistance vs. element temperature Photosensitivity temperature characteristics Cooling characteristics of TE-cooler (Typ. Ta=25 °C) Photosensitivity (A/W) Wavelength (nm) 0.1 190 400 600 800 1000300 500 700 900 1100 0.3 0.2 0.4 0.5 0.6 0.7 Temperature coefficient (%/°C) 190 400 600 800 1000300 500 700 900 1100 Wavelength (nm) (Typ. ) +0.5 +1.0 -0.5 +1.5 Shunt resistance Element temperature (°C) -20 (Typ. VR=10 mV) 10 kΩ 0 2 04 06 08 0 100 kΩ 1 MΩ 10 MΩ 100 MΩ 1 GΩ 10 GΩ 100 GΩ 1 TΩ S2592-04, S3477-04 S2592-03, S3477-03 0 0.4 0.8 1.2 1.6 Current (A) Element temperature (°C) -40 -60 -20 40(Typ. Ta=25 °C, thermal resistance of heatsink=3 °C/W) S3477 series S2592 series KSPDB0182EB KSPDB0053EC KSPDB0183EA KSPDB0184EA

Si photodiodes S2592/S3477 series KSPDA0133EB Detector (anode) Detector (cathode) TE-cooler (-) TE-cooler (+) Thermistor Window ɸ10 ± 0.2 ɸ14 ± 0.2 ɸ15.3 ± 0.2 2.0 ± 0.2 6.4 ± 0.212 Min.ɸ0.45 lead 10.2 ± 0.2 5.1 ± 0.2 5.1 ± 0.2 Photosensitive surface Dimensional outlines (unit: mm) S2592 series Current vs. voltage characteristics of TE-cooler Thermistor temperature characteristics 1.2 Voltage (V) Current (A) 1.0 0.6 0.8 1.4 1.6 (Typ. Ta=25 °C, thermal resistance of heatsink=3 °C/W) 0.4 0.2 Element temperature (°C) Resistance (Ω) 103 (Typ.) 104 105 106 -40 -20 0 20-30 -10 10 30 KSPDB0185EC KIRDB0116EB

Si photodiodes S2592/S3477 series KSPDA0134EC Thermistor Thermistor Detector (anode) Detector (cathode) TE-cooler (-) TE-cooler (+) Window ϕ10 ± 0.1 ϕ14 ± 0.1 24.4 ± 0.1 4.1 ± 0.2 17 ± 0.4 32 Max. 20 ± 1 ϕ9.3 8.6 ± 0.2 ϕ3.7 Photosensitive surface S3477 series

Si photodiodes S2592/S3477 series Specifi cations Setting element temperature -30 to +20 °C Applicable detectors*2 One-stage or two-stage thermoelectrically cooled detectors Temperature stability Within ±0.1 °C Power supply 100 V ± 10% ∙ 50/60 Hz*3 Power consumption 30 W Dimensions and weight 107 (W) × 84 (H) × 190 (D) mm/approx. 1.9 kg Operating temperature +10 to +40 °C Operating humidity Equal to or less than 90% * Storage temperature +20 to +40 °C *1: When used in combination with the A3179 series heatsink, do not use the 4-conductor cable supplied with the A3179 series, but use the A4372-05 instead. *2: It doesn't correspond to TE-cooled type infrared detector module with preamp. *3: Power requirement (AC line voltage) can be selected from among 100 V, 115 V and 230 V at the factory prior to shipping. *4: No condensation Temperature controller for TE-cooled detector C1103-04 By adjusting the current fl owing through the thermoelectric cooler in a one-stage or two- stage thermoelectrically cooled detector, the C1103-04 maintains the detector element at a constant temperature. The cooling temperature can be easily set by using the control knob on the front panel. KACCC0143EB TE-cooled detector Thermistor TE-cooled detector Comparator C1103-04 Amp circuit Current circuit Power supply AC input Block diagram Accessories Instruction manual 4-conductor cable (with a connector, 3 m) A4372-05*1 Power supply cable

Si photodiodes S2592/S3477 series Heatsink for TE-cooled detector (TO-8 package) A3179 The A3179 heatsink is designed for thermoelectrically cooled detectors having a 6-pin TO-8 package. Heat dissipation capacity for the A3179 is about 35 °C versus the ambient temperature 25 °C. 60° (4 ×) ϕ3.5 ϕ26 ± 0.2 *1 0.4 ± 0.3*2 Weight: 50 g approx. ϕ32 32.6 ϕ46 ϕ40 Photosensitive surface*3 *1: Bottom surface (reference surface) of detector metal package *2: When the detector is installed *3: The position of the photosensitive surface differs according to the detector used. Refer to the dimensional outline for the detector. Detector metal package KIRDA0018ED Dimensional outlines (unit: mm, tolerance unless otherwise noted: ±0.3)

Cat. No. KSPD1003E09 Oct. 2015 DN www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. Information described in this material is current as of October, 2015. Si photodiodes S2592/S3477 series Related information ∙ Disclaimer ∙ Metal, ceramic, plastic package products Technical information ∙ Si photodiode / Application circuit examples Precautions http://www.hamamatsu.com/sp/ssd/doc_en.html Precautions against UV light exposure ∙ When UV light irradiation is applied, the product characteristics may degrade. Such examples include degradation of the product ’s UV sensitivity and increase in dark current. This phenomenon varies depending on the irradiation level, irradiation intensity, usage time, and ambient environment and also varies depending on the product model. Before employing the product, we recommend that you check the tolerance under the ultraviolet light environment that the product will be used in. ∙ Exposure to UV light may cause the characteristics to degrade due to gas released from the resin bonding the product’s componen t materials. As such, we recommend that you avoid applying UV light directly on the resin and apply it on only the inside of the photosensitive area by using an aperture or the like.