S2551

S2551 HAMAMATSU | Alldatasheet

Document overview

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Technical content

Features

/K6C Long, narrow active area: 1.2 × 29.1 mm /K6C High sensitivity /K6C Low capacitance

Applications

/K6C Analytical instruments /K6C Optical measurement equipment PHOTODIODE Si photodiode For visible to infrared precision photometry S2551 S2551 is a Si photodiode having a long active area of 1.2 × 29.1 mm, designed for visible to infrared precision photometry. I Absolute maximum ratings Parameter Symbol Value Unit Reverse voltage V R Max. 30 V Operating temperature Topr -20 to +60 °C Storage temperature Tstg -20 to +80 °C I Electrical and optical characteristics (Ta=25 °C) Parameter Symbol Condition Min. Typ. Max. Unit Spectral response range λ - 320 to 1060 - nm Peak sensitivity wavelength λp - 920 - nm λ=λp -0 . 6-A / WPhoto sensitivity S λ=663 nm -0 . 3 7- A / W Short circuit current Isc 100 lx 24 30 - µA Dark current I D VR=10 mV - - 1 nA Temperature coefficient of I D TCID - 1.15 - times/°C Rise time tr VR=0 V, RL=1 kΩ -1 . 4- µs Terminal capacitance Ct VR=0 V, f=10 kHz - 350 - pF Shunt resistance Rsh V R=10 mV 0.01 0.03 - GΩ Noise equivalent power NEP VR=0 V, λ=λp - 3.9 × 10-14 - W/Hz1/2

HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. Si photodiode S2551 Cat. No. KSPD1027E02 Aug. 2006 DN SHUNT RESISTANCE AMBIENT TEMPERATURE (˚C) -20 (Typ. VR =10 mV) 10 kΩ 0 2 04 06 08 0 100 kΩ 1 MΩ 10 MΩ 100 MΩ 1 GΩ 10 GΩ 100 GΩ 1 TΩ 102 (Typ. Ta=25 ˚C, VR =0 V) 10 ns 103 104 105 100 ns 1 µs 10 µs 100 µs 1 ms RISE TIME LOAD RESISTANCE ( Ω ) DARK CURRENT REVERSE VOLTAGE (V) 0.01 (Typ. Ta=25 ˚C) 100 fA 0.1 1 10 1 pA 10 pA 100 pA 1 nA 10 nA TEMPERATURE COEFFICIENT (%/ ˚C) 190 400 600 800 1000 WAVELENGTH (nm) (Typ. ) +0.5 +1.0 -1.5 +1.5 0.45 LEAD ACTIVE AREA 1.2 × 29.1 13 3.2 ± 0.2 0.5 29.1 33.1 ± 0.7 40.0 ± 0.7 3.0-0.3+0 33.1 ± 0.7 1.2 PHOTOSENSITIVE SURFACE The resin coating may extend a maximum of 0.1 mm beyond the upper surface of the package. KSPDA0116EA I I I I I Dimensional outline (unit: mm) 0.1 190 400 600 800 1000 0.3 0.2 (Typ. Ta =25 ˚C) 0.4 0.5 0.6 0.7 PHOTO SENSITIVITY (A/W) WAVELENGTH (nm) I Spectral response KSPDB0173EA KSPDB0053EB I Rise time vs. load resistance KSPDB0174EA KSPDB0175EA I Dark current vs. reverse voltage I I I I I Photo sensitivity temperature characteristic I Shunt resistance vs. ambient temperature KSPDB0176EA