S2386 HAMAMATSU | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Features

/K6C High sensitivity /K6C Low dark current /K6C High reliability /K6C High linearity

Applications

/K6C Analytical equipment /K6C Optical measurement equipment PHOTODIODE Si photodiode For visible to IR, general-purpose photometry S2386 series I General ratings / Absolute maximum ratings Absolute maximum ratings Package Active area size Effective active area Reverse voltage VR Max. Operating temperature Topr Storage temperature Tstg Type No. Dimensional outline/ Window material * (mm) (mm) (mm 2) (V) (°C) (°C) S2386-18K ➀ /K S2386-18L ➁ /L TO-18 1.1 × 1.1 1.2 S2386-5K 2.4 × 2.4 5.7 S2386-44K ➂ /K 3.6 × 3.6 13 S2386-45K ➃ /K TO-5 3.9 × 4.6 17.9 S2386-8K ➄ /K TO-8 5.8 × 5.8 33 30 -40 to +100 -55 to +125 I Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Photo sensitivity S (A/W) Spectral response range λ Peak sensitivity wavelength λp Short circuit current Isc 100 lx Dark current ID VR=10 mV Max. Temp. coefficient of ID TCID Rise time tr VR=0 V RL=1 kΩ Terminal capacitance Ct VR=0 V f=10 kHz Shunt resistance Rsh VR=10 mV NEP VR=0 V λ=λpType No. (nm) (nm) λp GaP LED 560 nm He-Ne laser 633 nm GaAs LED 930 nm Min. (µA) Typ. (µA) (pA) (times/°C) (µs) (pF) Min. (GΩ ) Typ. (GΩ ) (W/Hz1/2) S2386-18K 11 . 3 S2386-18L 4 5.7 2 0.4 140 5 100 6.8 × 10 -16 S2386-5K 4.4 6.0 5 1.8 730 2 50 9.6 × 10 -16 S2386-44K 9.6 12 20 3.6 1600 0.5 S2386-45K 12 17 30 5.5 2300 0.3 25 1.4 × 10-15 S2386-8K 320 to 1100 960 0.6 0.38 0.43 0.59 26 33 50 1.12 10 4300 0.2 10 2.1 × 10 -15 * Window material K: borosilicate glass, L: lens type borosilicate glass

Si photodiode S2386 series 0.1 0.2 0.3 0.4 0.5 0.6 0.7 200 400 600 800 1000 WAVELENGTH (nm) PHOTO SENSITIVITY (A/W) (Typ. Ta=25 ˚C) IIIII Spectral response IIIII Photo sensitivity temperature characteristic KSPDB0110EA -0.5 +0.5 +1.0 +1.5 200 400 600 800 1000 WAVELENGTH (nm) TEMPERATURE COEFFICIENT ( % /˚C) (Typ.) KSPDB0058EB 90˚ 80˚ 70˚ 60˚ 50˚ 30˚ RELATIVE SENSITIVITY 40˚ 90˚ 80˚ 70˚ 60˚ 50˚ 30˚ 40˚ 80 % 100 % 20% 40 % 60 % S2386-18K S2386-18L I Directivity I Rise time vs. load resistance KSPDB0111EA LOAD RESISTANCE ( Ω ) RISE TIME (Typ. Ta=25 ˚C, VR =0 V) 10 ns 100 ns 1 µs 10 µs 100 µs 1 ms 102 103 104 105 S2386-18K S2386-5K S2386-44K S2386-8K S2386-45K KSPDB0112EA

Si photodiode S2386 series S2386-8K REVERSE VOLTAGE (V) DARK CURRENT (Typ. Ta=25 ˚C) 10 fA 100 fA 1 pA 10 pA 100 pA 1 nA 0.01 0.1 1 10 100 I Dark current vs. reverse voltage I Shunt resistance vs. ambient temperature KSPDB0113EB KSPDB0114EA AMBIENT TEMPERATURE ( ˚C) SHUNT RESISTANCE (Typ. VR =10 mV) 100 kΩ 1 MΩ 10 MΩ 100 MΩ 1 GΩ 10 TΩ -20 0 20 40 60 S2386-5K S2386-18K/-18L S2386-45K S2386-44K 10 GΩ 100 GΩ 1 TΩ KSPDA0102EB KSPDA0048EBy I Dimensional outlines (unit: mm) ➀ S2386-18K ➁ S2386-18L 2.3 3.6 ± 0.2 4.7 ± 0.1 5.4 ± 0.2 2.54 ± 0.2 CONNECTED TO CASE WINDOW 3.0 ± 0.2 0.45 LEAD 14 2.05 ± 0.3 0.45 LEAD 4.7 ± 0.1 5.4 ± 0.2 2.54 ± 0.2 CONNECTED TO CASE 2.3 3.6 ± 0.2

Si photodiode S2386 series HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. Cat. No. KSPD1035E03 Aug. 2006 DN4 The K type borosilicate glass window may extend a maximum of 0.2 mm above the upper surface of the cap. 15 5.0 ± 0.2 1.8 0.45 LEAD 12.35 ± 0.1 13.9 ± 0.2 7.5 ± 0.2 WINDOW 10.5 ± 0.1 PHOTOSENSITIVE SURFACE MARK ( 1.4) CONNECTED TO CASE KSPDA0104EA ➄ S2386-8K Y X 9.1 ± 0.2 8.1 ± 0.1 0.4 WINDOW 5.9 ± 0.1 ACTIVE AREA 20 4.1 ± 0.2 2.8 0.45 LEAD PHOTOSENSITIVE SURFACE 5.08 ± 0.2 CONNECTED TO CASE CHIP CENTER TO CAP CENTER -0.7≤X≤-0.1 -0.3≤Y≤+0.3 The K type borosilicate glass window may extend a maximum of 0.2 mm above the upper surface of the cap. KSPDA0103EA ➂ S2386-5K/-44K ➃ S2386-45K KSPDA0178EA 20 4.1 ± 0.2 2.8 0.45 LEAD 8.1 ± 0.1 WINDOW 5.9 ± 0.1 PHOTOSENSITIVE SURFACE 9.1 ± 0.2 5.08 ± 0.2 CONNECTED TO CASE The K type borosilicate glass window may extend a maximum of 0.2 mm above the upper surface of the cap.