S22MD1V SHARP | Alldatasheet
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- High repetitive peak OFF-state voltage (V DRM 2. Low trigger current (IFT : MAX. 10mA at RG = 20kΩ ) 3. High isolation voltage between input and output n Applications 1. ON-OFF operation for a low power load 2. For triggering high power thyristor and triac n Outline Dimensions (Unit : mm) S22MD1V θ mark Anode Internal connection diagram Anode mark θ S22MD3 Internal connection diagram S22MD1V S22MD3 123 456 1 2 3 456
1 Anode
2 Cathode
3 N C
4 Cathode
5 Anode
6 Gate
S22MD1V ••• Viso S22MD3V ••• Viso h S22MD1V and S22MD3 are for 200V line. : MIN. 600V ) S22MD1V/S22MD3 hh TUV (DIN-VDE0884 ) approved type is also available as an option. 4. Recognized by UL, file NO. 64380 data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, are also available () h Lead forming type (I type) and taping reel type (P type) of S22MD1V S22MD1VI/S22MD1P : 5 000Vrms : 2 500Vrms θ : 0 to 13˚ 6.5± 0.5 2.54± 0.25 0.9±0.2 1.2±0.3 7.12± 0.5 3.5±0.50.5TYP. 0.5± 0.1 3.7±0.5 3.35± 0.5 7.62± 0.3 0.26± 0.1 θ : 0 to 13˚ 0.85± 0.31.2± 0.3 9.22± 0.5 3.5± 0.50.5TYP. 7.62± 0.3
n Electro-optical Characteristics Parameter Conditions Input Output (Ta= 25˚C ) MIN. TYP. MAX. Unit - 1.2 1.4 V -- 1 0 -5 A -- 1 0 -6 A -- 1 0 -6 A - 1.0 1.4 V - 0.2 1 mA 5-- V/µs3- -1 0 m A 5x1 0 10 1011 - Ω − 20 50 µ s Symbol V F IR IDRM IRRM V T IH IFT R ISO ton IF = 30mA V R =3 V V DRM = Rated, RG = 20kΩ V RRM = Rated, RG = 20kΩ IT = 200mA V D = 6V, RG = 20kΩ V D = 6V, RG = 20kΩ , RL = 100Ω , IF = 30mA Transfer charac- teristics Parameter Symbol Rating Unit S22MD1V S22MD3 Input Forward current I F 50 mA Reverse voltage V R 6V Output IT 200 ∗1Peak one cycle surge current I surge 2A V DRM 600 V ∗2Repetitive peak reverse voltage V RRM 600 - V ∗3Isolation voltage V iso Operating temperature T opr -30 to +100 -30 to +100 ˚C Storage temperature T stg -55 to +125 -40 to +125 ˚C ∗4Soldering temperature T sol 260 ˚C n Absolute Maximum Ratings (Ta = 25˚C) ∗1 50H Z, sine wave ∗2 RG = 20kΩ ∗4 For 10 seconds ∗5 Applies only to S22MD1V 2V DRM = 1/ Rated, RG = 20kΩ S22MD1V/S22MD3 RMS ON-state current ∗2Repetitive peak OFF-state voltage Forward voltage Reverse current Repetitive peak OFF-state current ∗5Repetitive peak reverse current ON-state voltage Holding current Critical rate of rise of OFF-state voltage Minimum trigger current Isolation resistance Turn-on time S22MD1V S22MD3 V D = 6V, RL = 100Ω , RG = 20kΩ ∗3 40 to 60% RH, AC for 1 minute DC500V, 40 to 60% RH 5 000 2 500 mA rms V rms dV/dt
-3 0 0 2 04 06 08 0 1 0 0 T rms ) Ambient temperature Ta (˚C) Fig. 1 RMS ON-state Current vs. Ambient Temperature -30 0 25 50 75 100 125 Fig. 2 Forward Current vs. Ambient TemperatureForward current IF (mA ) Ambient temperature Ta (˚C) 100 200 500 50˚C 25˚C 0˚C - 25˚C Fig. 3 Forward Current vs. Forward Voltage Forward current IF (mA ) Forward voltage VF (V ) T a = 75˚C -3 0 0 2 04 06 08 0 1 0 0 20kΩ 50kΩ Fig. 4 Minimum Trigger Current vs. Ambient Temperature RG = 10kΩ Ambient temperature Ta (˚C) Minimum trigger current IFT (mA ) 1 2 5 10 20 50 100 200 100 Fig. 5 Minimum Trigger Current vs. Gate ResistanceMinimum trigger current IFT (mA ) Gate resistance RG -30 -20 0 20 40 60 80 100 120 100 200 300 400 500 600 700 800 900 20kΩ Fig. 6 Break Over Voltage vs. Break over voltage VBO (V ) Ambient temperature Ta (˚C) R G = 10kΩ V D =6 V R L = 100Ω V D =6 V R L = 100Ω T a = 25˚C (mARMS ON-state current I 100 200 (kΩ ) Ambient Temperature 50kΩ
Fig. 7 Critical Rate of Rise of OFF-state Voltage vs. Ambient Temperature Ambient temperature Ta (˚C) R G = 20kΩ V DRM = 1/ Rated2 0 2 04 06 08 0 1 0 0 Fig. 9 Repetitive Peak OFF-state Current vs. DRM (A ) Ambient temperature Ta (˚C) V DRM = Rated R G = 20kΩ2 10 -6 10 -7 10 -8 Critical rate of rise of OFF-state voltage Ambient TemperatureRepetitive peak OFF-state current I -3 0 0 2 04 06 08 0 1 0 0 0.01 0.02 0.05 0.1 0.2 0.5 20kΩ 50kΩ Fig. 8 Holding Current vs. Ambient TemperatureHolding current IH (mA ) Ambient temperature Ta (˚C) R G = 10kΩ V D =6 V dV/dt (V/µ s)
+ VCC VIN + VCC VIN CG RG ZS Load ZS : Snubber circuit CGRG Load n Basic Operation Circuit Low Power Load Drive Circuit + VCC VIN + VCC VIN RG CG RG CG ZS Load ZS : Snubber circuit RG CG RG CG Load l S22MD1V l S22MD3 AC 100V, 200V AC 100V, 200V AC 100V, 200V AC 100V, 200V Medium/High Power Thyristor Drive Circuit Medium/High Power Triac Drive Circuit (Zero-cross Operation) Medium/High Power Triac Drive Circuit l Please refer to the chapter “ Precautions for Use”(Page 78 to 93).