PC3H41XNIP

PC3H410NIP SHARP | Alldatasheet

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PC 3H 41X N IP Series/PC 3Q 410 N IP n R ank Table n A bsolute M axim um R atings n O utline D im ensions (U nit : m m ) A C Input, Low Input C urrent Type Photocoupler 1. Program m able controllers 2. Facsim iles 3. Telephones n A pplications M odel N o. R ank m ark Ic (m A ) C onditions PC 3H 410N IP PC 3H 411N IP A or no m ark A 0.25 to 2.0 0.5 to 1.5 IF=±0.5m A V C E=5V Ta=25°C M odel N o. R ank m ark Ic (m A ) C onditions PC 3Q 410N IP N o m ark 0.25 to 2.0 IF=±0.5m A V C E=5V Ta=25°C *1 Pulse w idth<=100µs, D uty ratio=0.001 *2 40 to 60% R H , A C for 1 m inute, f=60H z *3 For 10s Param eter Sym bol R ating U nit Forw ard current Peak forw ard current IF IFM ±10 ±200 m A m A m A Input O utput V Pow er dissipation C ollector-em itter voltage P 15 C ollector pow er dissipation C ollector current Total pow er dissipation 150 m W m W m W Ptot IC PC V C EO VEm itter-collector voltage 6V EC O V iso kV rm s 170 O perating tem perature Topr −40 to +125 −30 to +100 Storage tem perature Isolation voltage Tstg Soldering tem perature Tsol 260 2.5 (T a=25°C ) PC 3Q 410N IP 0.4±0.1 H 4 1 P C 3 Q 4 1 0.4±0.1 4.4±0.2 0.2±0.05 5.3±0.3 0.5+0.4−0.2 7.0+0.2−0.7 Anode m ark 0.1±0.1 2.0±0.2 Epoxy resin Internal connection diagram 1.27±0.25 2.6±0.3 1 0.2±0.05 5.3±0.3 C 0.4 (Input side) 0.5+0.4−0.2 7.0+0.2−0.7 Epoxy resin 10.3±0.3 1.27±0.25 4.4±0.2 Prim ary side m ark 916 PC 3H 41xN IP Series 1 2 4 3 Internal connection diagram 1 4 2.6±0.20.1±0.1 Anode (C athode) C athode (Anode) Em itter C ollector 16 14 1215 13 1011 9 1 3 52 4 76 8 7531 642 13119 141210 AnodeAnode (C athode) C athode (Anode) Em itter C ollector 0.2m m or m ore Soldering area n Features 1. Low input current type (IF=±0.5m A ) 2. H igh resistance to noise due to high com m on rejection voltage (C M R :M IN . 10kV /µs) 3. A C input type 4. M ini-flat package PC 3H 41X N IP Series (1ch) PC 3Q 410 N IP (4ch) 5. Isolation voltage (V iso:2.5kV rm s) 6. R ecognized by U L, file N o. E64380 N otice In the absence of confirm ation by device specification sheets, SH AR P takes no responsibility for any defects that m ay occur in equipm ent using any SH AR P devices show n in catalogs, data books, etc. C ontact SH AR P in order to obtain the latest device specification sheets before using any SH AR P device. Internet Internet address for Electronic C om ponents G roup http://w w w .sharp.co.jp/ecg/

PC 3H 41X N IP Series/PC 3Q 410 N IP n Electro-optical C haracteristics Fig.1 Test C ircuit for C om m on M ode R ejection Voltage Fig.2 Forw ard C urrent vs. A m bient Tem perature Param eter Sym bol M IN . TY P. M A X . U nit Forw ard voltage C ollector current Isolation resistance Floating capacitance R esponse tim e C om m on m ode rejection voltage Term inal capacitance C ollector dark current Em itter-collector breakdow n voltage C ollector-em itter breakdow n voltage C ollector-em itter saturation voltage R ise tim e Fall tim e V F C t IC EO B V C EO B V EC O R ISO C f IC V C E (sat) tr tf C M R C onditions IF=±10m A IF=±0.5m A , V C E=5V IF=±10m A , IC =1m A V =0, f=1kH z V C E=50V , IF=0 IC =0.1m A , IF=0 IE=10µA , IF=0 D C 500V 40 to 60% R H V =0, f=1M H z V C E=2V , IC =2m A , R L=100Ω Ta=25°C , R L=470Ω , V C M =1.5kV (peak), IF=0m A , V C C =9V , V np=100m V 1.4 V− − − 0.25 5×1010 1011 1.2 2.0 250 − 0.6 1.0 − 4 18 − 3 18 100 10 − − V − − V V− 0.2− µs µs kV /µs m A pF pF nA Ω (T a=25°C ) InputO utputTransfer characteristics *1 R efer to Fig.1. VC M Vcp Vnp VO (dV/dt) R L Vnp VC C VC M 1) Vcp : Voltage w hich is generated by displacem ent current in floating capacitance betw een prim ary and secondary side. (Vcp N early = dV/dt×C f×R L) VC M : H igh w ave pulse R L=470Ω VC C =9V Forw ard current IF (m A ) A m bient tem perature Ta (°C ) −30 0 25 50 75 100 125 Fig.3 D iode Pow er D issipation vs. A m bient Tem perature D iode pow er dissipation P (m W ) A m bient tem perature Ta (°C ) −30 0 25 50 75 100 125

PC 3H 41X N IP Series/PC 3Q 410 N IP Fig.6 Peak Forw ard C urrent vs. D uty R atio Fig.7 Forw ard C urrent vs. Forw ard Voltage Peak forw ard current IFM (m A ) D uty ratio 1000 100 10−210−3 10−122 2555 5 1 2000 200 500 Pulse w idth <=100µs Ta=25°C Forw ard current IF (m A ) 0.1 100 0 0.5 1.0 1.5 2.0 Forw ard voltage V F (V ) Ta=25°C Ta=75°C Ta=100°C Ta=50°C Ta=0°C Ta=−25°C Fig.5 Total Pow er D issipation vs. A m bient Tem perature Fig.4 C ollector Pow er D issipation vs. A m bient Tem perature Total pow er dissipation Ptot (m W ) A m bient tem perature Ta (°C ) 200 150 170 100 −30 0 25 50 75 100 125 C ollector pow er dissipation PC (m W ) A m bient tem perature Ta (°C ) 200 150 100 −30 0 25 50 75 100 125 Fig.8 C urrent Transfer R atio vs. Forw ard C urrent Fig.9 C urrent Transfer R atio vs. Forw ard C urrent C urrent transfer ratio C TR (% ) Forw ard current IF (m A ) 0.1 1 10 600 500 400 300 200 100 V C E=5V Ta=25°C PC 3H 41xN IP Series C urrent transfer ratio C TR (% ) Forw ard current IF (m A ) 0.1 1 10 500 400 300 200 100 V C E=5V Ta=25°C PC 3Q 410N IP

PC 3H 41X N IP Series/PC 3Q 410 N IP Fig.14 C ollector - em itter Saturation Voltage vs. A m bient Tem perature C ollector-em itter saturation voltage V C E (sat) (V ) A m bient tem perature Ta (°C ) 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 IF=10m A IC =1m A −30 1009080706050403020100−10−20 Fig.15 C ollector D ark C urrent vs. A m bient Tem perature Fig.10 C ollector C urrent vs. C ollector-em itter Voltage Fig.11 C ollector C urrent vs. C ollector-em itter Voltage A m bient tem perature Ta (°C ) −30 1009080706050403020100−10−20 V C E=50V 10−11 10−5 10−6 10−7 10−8 10−9 10−10 C ollector dark current IC EO (A ) C ollector current IC (m A ) C ollector-em itter voltage V C E (V ) 0 2 4 6 8 10 Ta=25°C PC (M A X .) IF=7m A IF=5m A IF=3m A IF=2m A IF=1m A IF=0.5m A PC 3H 41xN IP Series C ollector current IC (m A ) C ollector-em itter voltage V C E (V ) 0 2 4 6 8 10 Ta=25°C PC (M A X .) IF=7m A IF=5m A IF=3m A IF=2m A IF=1m A PC 3Q 410N IP IF=0.5m A Fig.12 R elative C urrent Transfer R atio vs. A m bient Tem perature Fig.13 R elative C urrent Transfer R atio vs. A m bient Tem perature R elative current transfer ratio (% ) A m bient tem perature Ta (°C ) −30 1009080706050403020100−10−20 V C E=5V IF=0.5m A 150 100 PC 3H 41xN IP Series R elative current transfer ratio (% ) A m bient tem perature Ta (°C ) −30 1009080706050403020100−10−20 V C E=5V IF=0.5m A 150 100 PC 3Q 410N IP

PC 3H 41X N IP Series/PC 3Q 410 N IP Fig.16 R esponse Tim e vs. Load R esistance R esponse tim e (µs) 0.1 1000 0.1 1 10 Load resistance R L (kΩ ) V C E=2V IC =2m A Ta=25°C tf tr td ts 100 Fig.21 R eflow Soldering 25°C 2m in 230°C 200°C 180°C 1m in 1m in 1.5m in 30s O nly one tim e soldering is recom m ended w ithin the tem perature profile show n below . Fig.19 Voltage G ain vs Frequency Fig.20 C ollector-em itter Saturation Voltage vs. Forw ard C urrent C ollector-em itter saturation voltage V C E (sat) (V ) Forw ard current IF (m A ) 0 2 4 6 8 10 Ta=25°C IC =7m A IC =5m A IC =3m A IC =2m A IC =1m A IC =0.5m A V oltage gain A V (dB ) −25 0.1 1 10 100 1000 Frequency f (kH z) V C E=2V IC =2m A Ta=25°C −10 −15 −20 R L=10kΩ 1kΩ 100Ω Fig.17 R esponse Tim e vs. Load R esistance (Saturation) Fig.18 Test C ircuit for R esponse Tim e R esponse tim e (µs) 0.1 1000 1 10 100 Load resistance R L (kΩ ) tf td ts 100 tr V C C =5V IF=16m A Ta=25°C 10% InputO utput Input O utput 90%tstd VC C R D R L tftr