S201D01

S101D01 SHARP | Alldatasheet

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n Outline Dimensionsn Features n Absolute Maximum Ratings (Ta = 25˚C) n Applications *1 50Hz, sine wave *3 For 10 seconds 1. Compact (16-pin dual-in-line package type) 3. Built-in zero-cross circuit 1. Fan heaters 2. Microwave ovens 3. Refrigerators 4. Air conditioners (Unit : mm ) 16-Pin DIP Type SSR for Low Power Control 2. RMS ON-state current IT : 1.2Arms Parameter Symbol Unit Input Forward current I F mA Reverse voltage V R V Output RMS ON-state current I T *1Peak one cycle surge current I surge A Repetitive peak OFF-state voltage V DRM V *2 Isolation voltage V iso Operating temperature T opr ˚C Storage temperature T stg ˚C *3Soldering temperature T sol ˚C For 100V lines For 200V lines For phase control No built-in zero- cross circuit S101D01 S201D01 Built-in zero- cross circuit S101D02 θ Internal connection diagram 2 3 4567

2 Anode

3 Cathode

A Anode mark 234567 A (Model No.) S101D01 S101D02 S201D01 S201D02 data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, S101D01/S101D02/S201D01/S201D02 (S101D02 , S201D02 ) S201D02 S201D01/S201D02 h Zero-cross circuit n Model Line-ups Rating S101D01/S101D02 S201D01/S201D02 1.2 400 600 - 25 to + 85 - 40 to + 125 260 A rms V rms *2 40 to 60% RH, AC 60Hz for 1 minute 4 000 4. Recognised by UL, file No. E94758 5. Approved by CSA, No. LR63705 h Zero-cross circuit for S101D02 /S201D02 θ : 0 to 13˚ 6.5± 0.5 7.62± 0.3 0.26± 0.1 0.5± 0.1 0.5TYP. 3.5± 0.5 1.2± 0.22.54± 0.25 19.82± 0.5 3.4± 0.5 16 15 16 15 13 11 9 , *To radiate the heat, solder the lead pins to , on the pattern of the PWB without using a socket such that there is no open pin left.

n Electrical Characteristics (Ta = 25˚C) S101D01/S101D02/S201D01/S201D02 Ambient temperature Ta (˚C) - 25 0 25 50 75 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 40 85 Ambient temperature Ta (˚C) Forward current IF (mA ) - 25 0 25 50 75 100 55 85 200 100 Forward voltage VF (V ) Forward current IF (mA ) -25˚C 50˚C 25˚C 0˚C Ambient temperature Ta (˚C) Minimum trigger current IFT (mA ) - 30 0 20 40 60 80 100 Fig. 1 RMS ON-state Current vs. Ambient Temperature Fig. 2 Forward Current vs. Ambient Temperature Fig. 3 Forward Current vs. Forward Voltage Fig. 4 Minimum Trigger Current vs. Ambient Temperature Parameter Symbol Conditions MIN. TYP. MAX. Unit Input Forward voltage V F IF = 20mA - 1.2 1.4 V Reverse current I R V R =3 V - - 1 0 -5 A Output Repetitive peak OFF-state current IDRM V DRM = 400V - - 10 -4 A V DRM = 600V - - 10 -4 A ON-state voltage V T IT = 1.2A - - 1.7 V Holding current I H - - 25 mA Zero-cross voltage V OX - - 35 V Critical rate of rise of OFF-state voltage 2V DRM = 1/ • 400V 200 - - V/ µ s 2V DRM = 1/ • 600V 100 - - V/ µ s Transfer charac- teristics Minimum trigger current I FT V D = 6V, RL = 100Ω - - 10 mA Isolation resistance R ISO 5 x 1010 1011 - Ω Turn-on time t on V D = 6V, RL = 100Ω , IF = 20mA - - 100 µ s (S101D01 ) S101D01 / S101D02 S201D01 / S201D02 S101D02 / S201D02 S101D01 / S101D02 S201D01 / S201D02 RMS ON-state current IT (Arms ) V D =6 V DC500V, 40 to 60% RH V D =6 V R L = 100Ω Ta = 75˚C dV/dt Resistance load, IF = 15mA

Ambient temperature Ta (˚C) Minimum trigger current IFT (mA ) - 30 0 20 40 60 80 100 Ambient temperature T a (˚C) Minimum trigger current IFT (mA ) - 30 0 20 40 60 80 100 Ambient temperature T a (˚C) - 30 0 20 40 60 80 100 0.8 0.9 1.0 1.1 1.2 1.3 1.4 Ambient temperature T a (˚C) - 30 0 20 40 60 80 100 T (V ) 0 0.5 1.0 1.5 0.2 0.4 0.6 0.8 1.0 1.2 Forward current I F (mA ) Turn-on time ton (µ s) 20 30 40 50 100 100 S101D01/S101D02/S201D01/S201D02 Fig. 5 Minimum Trigger Current vs. Ambient Temperature Fig. 6 Minimum Trigger Current vs. Ambient Temperature Fig. 8 Relative Holding Current vs. Ambient Temperature (S101D02 , S201D02 )( S201D01 ) Fig. 7 ON-state Voltage vs. Ambient Temperature Fig. 9 ON-state Current vs. ON-state Voltage (S101D01 ) Fig.10 Turn-on Time vs. Forward Current ON-state voltage VT (V ) Relative holding current IH (t˚C)/IH (25˚C)x 100(% ) ON-state current IT (A ) ON-state voltage V V D =6 V R L= 100Ω V D =6 V R L= 100Ω V D =6 V 103 102 101 IT = 1.2A IF = 20mA T a= 25˚C V D =6 V R L= 100Ω T a= 25˚C

S101D01/S101D02/S201D01/S201D02 Forward current IF (mA ) Turn-on time ton (µ s) 10 30 40 50 100 100 Forward current IF (mA ) Turn-on time ton (µ s) 100 10 30 40 50 100 200 Load ZSSSR + VCC (1) DC Drive (2) Pulse Drive n Basic Operation Circuit Fig.11 Turn-on Time vs. Forward Current Fig.12 Turn-on Time vs. Forward Current ZS : Surge absorption circuit (3) Phase Control (Precautions for Use) heat radiation from the mounted SSR. pattern around increases the change of being affected by external noise. 1) All pins must be soldered since they are also used as heat sinks (heat radiation fins). In designing, take into the (S101D02 , S201D02 )( S201D01 ) AC 100V (S101D01 /S101D02 ) AC 200V (S201D01 /S201D02 ) Notes 1) If large amount of surge is loaded onto VCC or the driver circuit, add a diode D1 2) Be sure to install a surge absorption circuit. An appropriate circuit must be chosen according to the load (for CR, choose its constant). This must be carefully done especially for an inductive load. 3) For phase control, adjust such that the load current immediately after the input signal is applied will be Tr1 V AC supply voltage Input signal Load current ( for resistance load) more than 60mA. designing mounting pattern. The rounded part of Pin 15 (gate) must be as small as possible. Pulling the gate 2) For higher radiation efficiency that allows wider thermal margin, secure a wider round pattern for Pin 13 when V D =6 V R L= 100Ω T a= 25˚C V D =6 V R L= 100Ω T a= 25˚C between terminals 2 and 3 to prevent reverse bias from being applied to the infrared LED. 3) As for other general cautions, refer to the chapter “ Precautions for Use ”