S2000AFI SAVANTIC | Alldatasheet
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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors S2000AFI DESCRIPTION ·Wit h TO-3P(H)IS package
- High voltage
- Fast switching
APPLICATIONS
- Horizontal deflection for color TV PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
ABSOLUTE MAXIMUM RATINGS (TC=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 8 A ICM Collector current-peak 15 A PC Collector power dissipation T C=25 50 W Tj Junction temperature 150 Tstg Storage temperature -55~150 THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-C Thermal resistance from junction to case 2.5 /W Fig.1 simplified outline (TO-3P(H)IS) and symbol
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors S2000AFI CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0 700 V V(BR)EBO Emitter-base breakdown voltage I E=10mA ;IC=0 10 V VCE(sat) Collector-emitter saturation voltage I C=4.5A ;IB=2.0A 1.0 V VBE(sat) Base-emitter saturation voltage I C=4.5A ;IB=2.0A 1.3 V ICES Collector cut-off current VCE=1500V; VBE=0 TC=125 1.0 2.0 mA IEBO Emitter cut-off current V EB=5V; IC=0 0.1 mA hFE DC current gain I C=1A ; VCE=5V 8 fT Transition frequency I C=0.1A ; VCE=5V;f=5MHz 7 MHz Switching times inductive load ts Storage time 7 µs tf Fall time IC=4.5A ; hFE=2.5; VCC=140V LC=0.9mH; LB=3µH 0.55 µs
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors S2000AFI PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)