BD646 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BD646/648/650/652
DESCRIPTION
- With TO-220C package
- Complement to type BD645/647/649/651
- DARLINGTON
APPLICATIONS
- For use in output stages in audio equipment ,general amplifier,and analogue switching applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT BD646 -80 BD648 -100 BD650 -120 VCBO Collector-base voltage BD652 Open emitter -140 V BD646 -60 BD648 -80 BD650 -100 VCEO Collector-emitter voltage BD652 Open base -120 V VEBO Emitter-base voltage Open collector -5 V IC Collector current-DC -8 A ICM Collector current-Pulse -12 A IB Base current -150 mA PC Collector power dissipation T C=25 62.5 W Tj Junction temperature 150 Tstg Storage temperature -65~150
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BD646/648/650/652 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP . MAX UNIT BD646 -60 BD648 -80 BD650 -100 V(BR)CEO Collector-emitter breakdown voltage BD652 IC=-30mA, IB=0 -120 V VCEsat-1 Collector-emitter saturation voltage I C=-3A ,IB=-12mA -2.0 V VCEsat-2 Collector-emitter saturation voltage I C=-5A ,IB=-50mA -2.5 V VBEsat Base-emitter saturation voltage I C=-5A ,IB=-50mA -3.0 V VBE Base-emitter on voltage I C=-3A ; VCE=-3V -2.5 V BD646 VCB=-60V, IE=0 VCB=-40V, IE=0 ;TC=150 -0.2 -2.0 BD648 VCB=-80V, IE=0 VCB=-50V, IE=0 ;TC=150 -0.2 -2.0 BD650 VCB=-100V, IE=0 VCB=-60V, IE=0 ;TC=150 -0.2 -2.0 ICBO Collector cut-off current BD652 VCB=-120V, IE=0 VCB=-70V, IE=0 ;TC=150 -0.2 -2.0 mA BD646 V CE=-30V, IB=0 BD648 V CE=-40V, IB=0 BD650 V CE=-50V, IB=0 ICEO Collector cut-off current BD652 V CE=-60V, IB=0 -0.5 mA IEBO Emitter cut-off current V EB=-5V; IC=0 -5 mA hFE DC current gain I C=-3A ; VCE=-3V 750 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance junction to case 2.0 /W
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BD646/648/650/652 PACKAGE OUTLINE Fig.2 Outline dimensions