2SB337 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB337
DESCRIPTION
- With TO-3 package
- Low collector saturation voltage
APPLICATIONS
- For audio frequency power output
PINNING(see Fig.2) PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Absolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -40 V VCEO Collector-emitter voltage Open base -30 V VEBO Emitter-base voltage Open collector -10 V IC Collector current -7 A IE Emitter current 7 A IB Base current -1 A PC Collector power dissipation T C-55 30 W Tj Junction temperature 100 Tstg Storage temperature -55~100 Fig.1 simplified outline (TO-3) and symbol
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB337 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=-10mA; IB=0 -30 V V(BR)EBO Emitter-base breakdown voltage I E=-1mA; IC=0 -10 V VCEsat Collector-emitter saturation voltage I C=-4A; IB=-0.4A -0.29 V VBE Base-emittter on voltage I C=-1A ;VCE=-2V -0.38 V ICBO Collector cut-off current V CB=-30V; IE=0 -0.1 mA IEBO Emitter cut-off current V EB=-10V; IE=0 -0.1 mA hFE DC current gain I C=-1A ; VCE=-2V 50 90 165 hFE Classifications A B 50-100 80-165
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB337 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm)