S2000A SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors S2000A
DESCRIPTION
- With TO-3PH package
- High voltage ,high speed
- Low collector saturation voltage
APPLICATIONS
- Color TV horizontal output applications
- Color TV switching regulator applications PINNING(See Fig.2) PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
ABSOLUTE MAXIMUM RATINGS (TC=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 8 A ICM Collector current-peak 15 A IB Base current 4 A PC Collector power dissipation T C=25 125 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-3PH) and symbol
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors S2000A CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IB=500mA ;VBE=-1.7V;L=40mH 700 V V(BR)EBO Emitter-base breakdown voltage I E=1mA ;IC=0 5 V VCE(sat) Collector-emitter saturation voltage I C=4.5A ;IB=2A 1.0 V VBE(sat) Base-emitter saturation voltage I C=4.5A ;IB=1.0A 1.2 V ICBO Collector cut-off current V CB=1500V; VBE=0 1 mA hFE-1 DC current gain I C=1A ; VCE=5V 10 30 hFE-2 DC current gain I C=4.5A ; VCE=5V 4.5 9 COB Collector output capacitance I E=0 ; VCB=10V;f=1MHz 95 pF fT Transition frequency I C=0.1A ; VCE=10V 2 MHz
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors S2000A PACKAGE OUTLINE Fig.2 outline dimensions