S12742-254

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Photodiode with interference filter for monochromatic light (254 nm) detection Si photodiode www.hamamatsu.com 1 The S12742-254 uses an interference filter for its window and is sensitive only to monochromatic light. The spectral response width is extremely narrow at 10 nm (FWHM), allowing accurate photometry without any effects of stray light. The center wavelength is 254 nm typ. The S12742-254 can be customized to support other peak sensitivity wavelengths such as 340 nm, 560 nm, and 650 nm. Analytical instruments UV monitors (mercury lamp monitor, etc.) Features Applications Si photodiode with interference filter Monochromatic light (254 nm) detection Structure Absolute maximum ratings Electrical and optical characteristics (Ta=25 °C) Parameter Specifi cation Unit Package TO-5 - Photosensitive area 3.61 × 3.61 mm Parameter Symbol Condition Value Unit Reverse voltage VR max Ta=25 °C 5 V Operating temperature Topr -20 to +60 °C Storage temperature Tstg -55 to +80 °C Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Parameter Symbol Condition Min. Typ. Max. Unit Center wavelength CWL 252 254 256 nm Spectral response half- width FWHM 8 10 12 nm Photosensitivity S λ=254 nm 12 18 - mA/W Dark current I D VR=10 mV - 2 25 pA Dark current temperature coeffi cient T CID - 1.12 - times/°C Rise time tr VR=0 V, RL=1 kΩ 10% to 90% -1- μs Terminal capacitance Ct V R=0 V, f=10 kHz - 500 750 pF Shunt resistance Rsh V R=10 mV 0.4 5 - GΩ Noise equivalent power NEP V R=0 V, λ=λp - 9.1 × 10-14 - W/Hz1/2

Dark current vs. reverse voltage Terminal capacitance vs. reverse voltage 200 300 400 500 Wavelength (nm) Photosensitivity (mA/W) 600 700 800 (Typ. Ta=25 °C)50 Dark current Reverse voltage (V) (Typ. Ta=25 °C) 0.01 100 fA 0.1 1 10 1 pA 10 pA 100 pA 1 nA Terminal capacitance Reverse voltage (V) (Typ. Ta=25 °C) 0.1 10 pF 11 0 100 pF 1 nF 10 nF KSPDB0333EA KSPDB0332EA KSPDB0335EA Note: Wavelengths other than 254 nm will be provided on a made to order basis.

Dimensional outline (unit: mm) ϕ0.45 Lead (20) 9.64 ± 0.2 2.6 ϕ5.08 ± 0.2 3.61 × 3.61 Case 0.4 max. Photosensitive surface Photosensitive area ϕ6.1 ± 0.1 Y X ϕ8.3 ± 0.1 ϕ9.15 ± 0.2 Tolerance unless otherwise noted: ±0.2 Distance from photosensitive area center to cap center -0.3≤X≤+0.3 -0.3≤Y≤+0.3 The glass window may extend a maximum of 0.2 mm beyond the upper surface of the cap. KSPDA0205EA

Cat. No. KSPD1082E03 Oct. 2015 DN www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. Information described in this material is current as of October, 2015. Si photodiode S12742-254 Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Metal, ceramic, plastic packages Technical information ∙ Si photodiode / Application circuit examples Precautions against UV light exposure ∙ When UV light irradiation is applied, the product characteristics may degrade. Such examples include degradation of the product ’s UV sensitivity and increase in dark current. This phenomenon varies depending on the irradiation level, irradiation intensity, usage time, and ambient environment and also varies depending on the product model. Before employing the product, we recommend that you check the tolerance under the ultraviolet light environment that the product will be used in. ∙ Exposure to UV light may cause the characteristics to degrade due to gas released from the resin bonding the product’s componen t materials. As such, we recommend that you avoid applying UV light directly on the resin and apply it on only the inside of the photosensitive area by using an aperture or the like.