S12706

S12706 HAMAMATSU | Alldatasheet

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High sensitivity, photosensitive area with minute pixels www.hamamatsu.com Absolute maximum ratings Structure Parameter Symbol Condition Value Unit Supply voltage Vdd Ta=25 °C -0.3 to +6 V Clock pulse voltage V(CLK) Ta=25 °C -0.3 to +6 V Start pulse voltage V(ST) Ta=25 °C -0.3 to +6 V Operating temperature*1 Topr -40 to +85 °C Storage temperature*1 Tstg -40 to +85 °C Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. *1: No condensation Parameter Specifi cation Unit Number of pixels 4096 - Pixel size 7 × 7 μm Photosensitive area length 28.672 mm Package LCP (liquid crystal polymer) - Window material Quartz - The S12706 is a high sensitivity CMOS linear image sensor using a photosensitive area with minute pixels. It has a long photosensitive area (effective photosensitive length: 28.672 mm) consisting of 4096 pixels, each with a pixel size of 7 × 7 μm. 4096 pixels Effective photosensitive area length: 28.672 mm High sensitivity: 23 V/(lx·s) Simultaneous charge integration for all pixels Variable integration time function (electronic shutter function)

5 V single power supply operation

Pixel size: 7 × 7 μm Built-in timing generator allows operation with only start and clock pulse inputs. Video data rate: 10 MHz max. Position detection Encoders Image reading Features Applications

CMOS linear image sensor S12706 Recommended terminal voltage (Ta=25 °C) Electrical characteristics [Ta=25 °C, Vdd=5 V, V(CLK)=V(ST)=5 V] Electrical and optical characteristics [Ta=25 °C, Vdd=5 V, V(CLK)=V(ST)=5 V, f(CLK)=10 MHz] Parameter Symbol Min. Typ. Max. Unit Supply voltage Vdd 4.75 5 5.25 V Clock pulse voltage High level V(CLK) 3 Vdd Vdd + 0.25 V Low level 0 - 0.3 V Start pulse voltage High level V(ST) 3 Vdd Vdd + 0.25 V Low level 0 - 0.3 V Parameter Symbol Min. Typ. Max. Unit Clock pulse frequency f(CLK) 200 k 5 M 10 M Hz Video data rate VR - f(CLK) - Hz Output impedance Zo 70 - 260 Ω Current consumption*2 *3 I 2 04 06 0 m A *2: f(CLK)=10 MHz *3: Current consumption increases as the clock pulse frequency increases. The current consumption is 10 mA typ . at f(CLK)=200 kHz. Parameter Symbol Min. Typ. Max. Unit Spectral response range λ 400 to 1000 nm Peak sensitivity wavelength λp - 600 - nm Photosensitivity*4 R - 23 - V/(lx·s) Conversion effi ciency*5 CE -2 5- μV/e- Dark output voltage*6 Vd 0 0.2 2 mV Saturation output voltage*7 Vsat 1.5 2.0 2.5 V Readout noise Nr 0.5 1.0 1.8 mV rms Dynamic range 1*8 DR1 - 2000 - times Dynamic range 2*9 DR2 - 10000 - times Output offset voltage Vo 0.3 0.5 0.9 V Photoresponse nonuniformity*4 *10 PRNU - ±2 ±10 % Image lag*11 IL - - 0.1 % *4: Measured with a tungsten lamp of 2856 K *5: Output voltage generated per one electron *6: Integration time=10 ms *7: Diference from Vo *8: DR1 = Vsat/Nr *9: DR2 = Vsat/Vd Integration time=10 ms Dark output voltage is proportional to the integration time and so the shorter the integration time, the wider the dynamic range. *10: Photoresponse nonunif ormit y (PRNU) is the output nonuniformity that occurs when the entire photosensitive area is uniformly illuminated by light which is 50% of the saturation exposure level. PRNU is measured using 4090 pixels excluding 3 pixels each at both ends, and is defi ned as follows: PRNU = ΔX/X × 100 (%) X: average output of all pixels, ΔX: difference between X and maximum output or minimum output *11: Signal components of the preceding line data that still remain even after the data is read out in a satur ation output state. Image lag increases when the output exceeds the saturation output voltage. Input terminal capacitance (Ta=25 °C, Vdd=5 V) Parameter Symbol Min. Typ. Max. Unit Clock pulse input terminal capacitance C(CLK) - 5 - pF Start pulse input terminal capacitance C(ST) - 5 - pF

CMOS linear image sensor S12706 Trig Video Vdd EOS Amp array Bias generator Hold circuit Photodiode array Shift register CLK ST Timing generator 1 12 Vss 2 11 1523 Wavelength (nm) Relative sensitivity (%) 400 500 700600 800 900 1000 100 (Ta=25 °C) Spectral response (typical example) Block diagram KMPDB0397EA KMPDC0398EA

CMOS linear image sensor S12706 Output waveforms of one pixel GND GND

0.5 V (output offset voltage)

2.5 V (saturation output voltage=2.0 V) GND CLK Trig Video 5 V/div. 5 V/div. 1 V/div. 20 ns/div. GND GND 2.5 V (saturation output voltage=2.0 V) GND CLK Trig Video 5 V/div. 5 V/div. 1 V/div. 200 ns/div. The timing for acquiring the Video signal is synchronized with the rising edge of Trig pulse (See red arrow below.). f(CLK)=VR=1 MHz f(CLK)=VR=10 MHz

CMOS linear image sensor S12706 1 89 2 34 4096 1 5 1 2 34 51 52 53 87 88 89 CLK ST Video Trig EOS thp(ST) tlp(ST) tpi(ST) 87 clocks 4096 Integration time CLK ST tf(CLK) tf(ST)tr(ST) tr(CLK) tlp(ST)thp(ST) tpi(ST) 1/f(CLK) Timing chart KMPDC0480EA Parameter Symbol Min. Typ. Max. Unit Start pulse cycle*12 tpi(ST) 98/f(CLK) - - s Start pulse high period*12 *13 thp(ST) 6/f(CLK) - - s Start pulse low period tlp(ST) 92/f(CLK) - - s Start pulse rise and fall times tr(ST), tf(ST) 0 10 30 ns Clock pulse duty ratio - 45 50 55 % Clock pulse rise and fall times tr(CLK), tf(CLK) 0 10 30 ns *12: Dark output increases if the start pulse cycle or the start pulse high period is lengthened. *13: The integration time equals the high period of ST plus 48 CLK cy cles. The shift register starts operation at the rising edge of CLK immediately after ST goes low. The integration time can be changed by changing the ratio of the high and low periods of ST. If the fi rst Trig pulse after ST goes low is counted as the fi rst pulse, the Video signal is acquired at the rising edge of the 89th Trig pulse.

CMOS linear image sensor S12706 Photosensitive area 28.672 41.6 ± 0.2 Tolerance unless otherwise noted: ±0.1 *1: Distance from window upper surface to photosensitive surface *2: Distance from package bottom to photosensitive surface *3: Glass thickness 2.54 0.51 27.94 14.336 ± 0.3 9.1 ± 0.1 10.2 ± 0.5 ±15° 10.02 ± 0.3 4.55 ± 0.4 1.4 ± 0.2*2 1.35 ± 0.2*1 0.5 ± 0.05*3 1 ch 0.2 4.0 ± 0.5 3.0 Photosensitive area 0.007 Direction of scan ±15° Photosensitive surface A A-A’ cross section Operation example thp(ST)=409.6 µstlp(ST)=9.2 µs ST tpi(ST)=418.8 µs KMPDC0481EA This example assumes that the clock pulse frequency is maximized (video data rate is also maximized), the time of one scan is m ini- mized, and the integration time is maximized Clock pulse frequency = Video data rate = 10 MHz Start pulse cycle = 4188/f(CLK) = 4188/10 MHz = 418.8 μs High period of start pulse = Start pulse cycle - Start pulse’s low period min. = 4188/f(CLK) - 92/f(CLK) = 4188/10 MHz - 92/10 MHz = 409.6 μs Integration time is equal to the high period of start pulse + 48 cycles of clock pulses, so it will be 409.6 + 4.8 = 414.4 μs. Dimensional outline (unit: mm) KMPDA0309EA

CMOS linear image sensor S12706 ST Trig NC NC NC NC NC NC NC EOS NC Video Vdd Vss CLK NC NC NC NC NC NC NC Vss Vdd 22 µF/25 V 0.1 µF 0.1 µF 0.1 µF +5 V +5 V +5 V Trig EOS ST CLK 74HC541 74HC541 22 µF/25 V 22 µF/25 V 22 µF/25 V 22 µF/25 V 22 µF/25 V Video S12706 LT1818 22 pF -5 V 51 Ω 100 Ω 82 Ω 82 Ω 0.1 µF 0.1 µF 0.1 µF +5 V +5 V Application circuit example KMPDC0482EA Pin connections Pin no. Symbol I/O Description Pin no. Symbol I/O Description

1 Vdd I Supply voltage 13 Video O Video signal

2 Vss - GND 14 NC - No connection

3 CLK I Clock pulse 15 EOS O End of scan

4 NC - No connection 16 NC - No connection

5 NC - No connection 17 NC - No connection

6 NC - No connection 18 NC - No connection

7 NC - No connection 19 NC - No connection

8 NC - No connection 20 NC - No connection

9 NC - No connection 21 NC - No connection

10 NC - No connection 22 NC - No connection

11 Vss - GND 23 Trig O Trigger pulse for video signal

12 Vdd I Supply voltage 24 ST I Start pulse

Note: Leave the “NC” terminals open and do not connect them to GND. Connect a buff er amplifi er for impedance conversion to the video output terminal so as to minimize the current fl ow. As the buffer amplifi er, use a high input impedance operational amplifi er with JFET or CMOS input.

www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. Information described in this material is current as of January, 2014. Cat. No. KMPD1146E01 Jan. 2014 DN CMOS linear image sensor S12706 Precautions Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Notice ∙ Image sensor / Precautions (1) Electrostatic countermeasures This device has a built-in protection circuit against static electrical char ges. Howev er, to prevent destroying the device with electro- static charges, take countermeasures such as grounding yourself, the workbench and tools. Also protect this device from surge volt- ages which might be caused by peripheral equipment. (2) Light input window If dust or dirt gets on the light input window, it will show up as black blemishes on the image. When cleaning, avoid rubbing t he window surface with dry cloth or dry cotton swab, since doing so may generate static electricity. Use soft cloth, paper or a co tton swab moistened with alcohol to wipe dust and dirt off the window surface. Then blow compressed air onto the window surface so that no spot or stain remains. (3) Soldering To prevent damaging the device during soldering, take precautions to prevent excessive soldering temperatures and times. Solder - ing should be performed within 5 seconds at a soldering temperature below 260 °C. (4) Operating and storage environments Always observe the rated temperature range when handling the device. Operating or storing the device at an excessively high tem - perature and humidity may cause variations in performance characteristics and must be avoided. (5) UV light irradiation This device is not designed to prev ent deterioration of characteristics caused by UV exposure, so do not expose it to UV light.