S12551-2048

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Parameter Specifi cation Pixel size (H × V) 14 × 14 μm Number of pixels 2068 Number of effective pixels 2048 Image size (H × V) 28.672 × 0.014 mm Horizontal clock phase Two-phase Output circuit Three-stage MOSFET source follower Package 24-pin ceramic DIP (refer to dimensional outline) Window material Quartz glass*1 *1: Resin sealing Absolute maximum ratings (Ta=25 °C, unless otherwise noted) Parameter Symbol Condition Value Unit Operating temperature Topr Package temperature, No condensation -50 to +60 °C Storage temperature Tstg No condensation -50 to +70 °C Output transistor drain voltage VOD -0.5 to +20 V Reset drain voltage VRD -0.5 to +18 V Anti-blooming drain voltage VABD -0.5 to +18 V Horizontal input source voltage VISH -0.5 to +18 V Anti-blooming gate voltage VABG -10 to +15 V Horizontal input gate voltage VIGH -10 to +15 V Summing gate voltage VSG -10 to +15 V Output gate voltage VOG -10 to +15 V Reset gate voltage VRG -10 to +15 V Transfer gate voltage VTG -10 to +15 V Horizontal shift register clock voltage VP1H, VP2H -10 to +15 V Note: During high-speed operation, the temperature of the sensor increases. Take heat dissipation measures as required to prevent exceeding the absolute maximum ratings. Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to the product within the absolute maximum ratings.

CCD linear image sensor S12551-2048 Operating conditions (Ta=25 °C) Parameter Symbol Min. Typ. Max. Unit Output transistor drain voltage VOD 14 15 16 V Reset drain voltage VRD 13 14 15 V Anti-blooming drain voltage VABD 13 14 15 V Test point Horizontal input source voltage V ISH -V RD - VHorizontal input gate voltage VIGH -5 -4 - Anti-blooming gate voltage High V ABGH 258 VLow V ABGL -4 -2 0 Summing gate voltage High V SGH 258 VLow V SGL -5 -4 -3 Output gate voltage VOG 357 V Substrate voltage V SS -0- V Reset gate voltage High V RGH 89 1 0 VLow V RGL -1 0 1 Transfer gate voltage High V TGH 789 VLow V TGL -5 -4 -3 Horizontal shift register clock voltage High V P1HH, VP2HH 258 VLow V P1HL, VP2HL -5 -4 -3 External load resistance RL 2.0 2.2 2.4 kΩ Electrical characterisitics (Ta=25 °C, operating conditions: Typ., unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit Output signal frequency*2 fop - 20 40 MHz Line rate Without electronic shutter LRnes - 9.5 19.2 kHzWith electronic shutter LRes - 9.5 18.7 Horizontal shift register capacitance CP1H, CP2H - 220 - pF Anti-blooming gate capacitance CABG -8 0- p F Summing gate capacitance CSG -1 0- p F Reset gate capacitance CRG -1 0- p F Transfer gate capacitance CTG - 120 - pF Charge transfer effi ciency*3 CTE 0.99995 0.99999 - - DC output level*2 Vo 8 9 10 V Output impedance*2 Zo - 160 - Ω Power consumption*2 *4 P - 100 140 mW *2: The value depends on the load resistance. *3: Charge transfer effi ciency per pixel of CCD shift register, measured at half of the full well capacity *4: Power consumption of the on-chip amplifi er plus load resistance Electrical and optical characterisitics (Ta=25 °C, operating conditions: Typ., unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit Saturation output voltage Vsat - Fw × Sv - V Full well capacity Csat 70 100 - ke- CCD node sensitivity CCE 11 13 15 μV/e- Dark current (maximum of all effective pixels) I D max - 15 75 e -/pixel/ms Readout noise*6 Nread - 40 60 e- rms Dynamic range*7 DR 1167 2500 - - Spectral response range λ - 200 to 1000 - nm Photoresponse nonuniformity*8 *9 PRNU - ±3 ±10 % Image lag*8 Lag - 0.1 1 % *5: Dark current is reduced to half for every 5 to 7 °C decrease in temperature. *6: Readout frequency 40 MHz *7: Dynamic range = Full well capacity / Readout noise *8: Measured at one-half of the saturation output (full well capacity) using LED light (peak emission wavelength: 470 nm) Fixed pattern noise (peak to peak) Signal × 100 [%] *9: Photoresponse nonuniformity =

CCD linear image sensor S12551-2048 Spectral response (without window, typical example)*10 Spectral transmittance characteristics of window material Wavelength (nm) (Ta=25 °C) Quantum efficiency (%) 100 1100200 300 400 500 600 700 800 900 1000 Wavelength (nm) (Ta=25 °C) Photosensitivity [V/(μJ∙cm2)] 100 1100200 300 400 500 600 700 800 900 1000 Wavelength (nm) (Typ. Ta=25 °C) Transmittance (%) 100 300 400200 500 600 700 800 900 1000 KMPDB0398EB KMPDB0448EA KMPDB0303EA *10: Spectral response with quartz glass is decreased according to the spectral transmittance characteristics of window material.

CCD linear image sensor S12551-2048 Device structure (conceptual drawing of top view in dimensional outline) 2 3 4 6 7 8 9 10 11 12 23 22 21 20 19 16 Photodiode CCD horizontal shift register Light-shielded section S2045 S2046 S2047 S2048D5 S1 S2 S3 S4D6 D7 D8 D9D10 D11 D12 D13 D14 D15 D16 D17 D18 D19 D20D1 D2 D3 D4 KMPDC0483EA

CCD linear image sensor S12551-2048 Timing chart Parameter Symbol Min. Typ. Max. Unit TG Pulse width Tpwv 0.2 0.4 - μs Rise and fall times Tprv, Tpfv 10 - - ns P1H, P2H*11 Pulse width Tpwh 12.5 25 - ns Rise and fall times Tprh, Tpfh 2 - - ns Duty ratio - 40 50 60 % SG Pulse width Tpws 12.5 25 - ns Rise and fall times Tprs, Tpfs 2 - - ns Duty ratio - 40 50 60 % RG Pulse width Tpwr 6 12 - ns Rise and fall times Tprr, Tpfr 1 - - ns TG - P1H Overlap time Tovr 0.1 0.2 - μs *11: Symmetrical clock pulses should be overlapped at 50% of maximum pulse amplitude. 1 line output period (integration time) Tpwr TG ABG P1H RG OS Tpwv Tovr Normal readout period Dummy readout period* D2 D19 D20 2 3...2067 2068 P2H SG Tpwh, Tpws * When making the integration time longer than the normal readout period, to carry away the dark current generated in the CCD horizontal shift register, perform dummy readout after completion of the normal readout until right before rising transfer gate pulse. When not using electronic shutter KMPDC0484EB

CCD linear image sensor S12551-2048 Parameter Symbol Min. Typ. Max. Unit ABG Pulse width Tpwab 1 - - μs Rise and fall times Tprab, Tpfab 300 - - ns TG Pulse width Tpwv 1.6 2.0 - μs Rise and fall times Tprv, Tpfv 10 - - ns P1H, P2H*12 Pulse width Tpwh 12.5 25 - ns Rise and fall times Tprh, Tpfh 2 - - ns Duty ratio - 40 50 60 % SG Pulse width Tpws 12.5 25 - ns Rise and fall times Tprs, Tpfs 2 - - ns Duty ratio - 40 50 60 % RG Pulse width Tpwr 6 12 - ns Rise and fall times Tprr, Tpfr 1 - - ns TG - P1H Overlap time Tovr 0.1 0.2 - μs Integration time Tinteg 2 - - μs *12: Symmetrical clock pulses should be overlapped at 50% of maximum pulse amplitude. 1 line output period (electronic shutter: close) (electronic shutter: open) Tpwr TG ABG P1H RG OS Tpwv Tpwab Tinteg (integration time) Tovr Normal readout period Dummy readout period* D2 D19 D20 2 3...2067 2068 P2H SG Tpwh, Tpws * When making the integration time longer than the normal readout period, to carry away the dark current generated in the CCD horizontal shift register, perform dummy readout after completion of the normal readout until right before rising transfer gate pulse. When using electronic shutter KMPDC0485EB

CCD linear image sensor S12551-2048 Pin connections Pin no. Symbol Function Remark (standard operation) 1 OS Output transistor source RL=2.2 kΩ

2 OD Output transistor drain +15 V

3 OG Output gate +5 V

4 SG Summing gate Same pulse as P2H

5 SS Substrate GND

6 RD Reset drain +14 V

9 P2H CCD horizontal resister clock-2 +5/-4 V

10 P1H CCD horizontal resister clock-1 +5/-4 V

12 IGH Test point (horizontal input gate) -4 V

13 ABG Anti-blooming gate +5/-2 V

14 ABD Anti-blooming drain +14 V

15 ISH Test point (horizontal input source) Connect it to RD. 16 -

17 SS Substrate GND

18 RD Reset drain +14 V

23 TG Transfer gate +8/-4 V

24 RG Reset gate +9/0 V

41.6 ± 0.42 24 A 11 2A’ Photosensitive area 28.672 × 0.014 27.94 ± 0.3 3.0 ± 0.2 1.27 ± 0.1 10.16 ± 0.25 3.0 ± 0.03 10.03 ± 0.25 0.25 Tolerance unless otherwise noted: ±0.1 *1: Distance from package surface to photosensitive surface *2: Distance from window upper surface to photosensitive surface *3: Distance from package bottom to photosensitive surface *4: Glass thickness Index mark Index mark 20.8 ± 0.3 Photosensitive surface A-A’ cross section +0.05 -0.03 This product is not hermetically sealed and moisture may penetrate inside the package. Avoid using or storing this product in an environment where sudden temperature and humidity changes may occur and cause condensation in the package. 5.015 ± 0.2 1.115 ± 0.1*2 1.35 ± 0.2*1 0.5 ± 0.05*4 1.65 ± 0.2*3 KMPDA0310EA Dimensional outline (unit: mm)

Cat. No. KMPD1147E03 Sep. 2015 DN CCD linear image sensor S12551-2048 www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. Information described in this material is current as of September, 2015. Related information www.hamamatsu.com/sp/ssd/doc_ja.html Precautions ∙ Disclaimer ∙ Image sensors Precautions O Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. O Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. O Provide ground lines or ground connection with the work-fl oor, work-desk and work-bench to allow static electricity to discharge. O Ground the tools used to handle these sensors, such as tweezers and soldering irons. It is not always necessary to provide all the electrostatic measur es stated above. Implement these measures according to the am ount of damage that occurs. Electrostatic countermeasures When UV light irradiation is applied, the product characteristics may degrade. Such examples include degradation of the product ’s UV sensitivity and increase in dark current. This phenomenon varies depending on the irradiation level, irradiation intensity, usage time, and ambient environment and also varies depending on the product model. Before employing the product, we recommend that you check the tolerance under the ultraviolet light environment that the product will be used in. When UV light irradiation is applied