S12379

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Parameter Speci fi cation Unit Image size (H × V) 16.384 × 0.008 mm Pixel size (H × V) 8 × 8 μm Total number of pixels 2104 - Number of effective pixels 2048 - Fill factor 100 % Horizontal clock 2-phase - Output circuit 3-stage MOSFET source follower - Package 24-pin ceramic DIP - Window material Quartz glass *1: Resin sealing Absolute maximum ratings (Ta=25 °C, unless otherwise noted) Parameter Symbol Condition Value Unit Operating temperature Topr Package temperature, no condensation -50 to +70 °C Storage temperature Tstg No condensation -50 to +70 °C Output transistor drain voltage VOD1, 2, 3, 4 -0.5 to +20 V Reset drain voltage V RD -0.5 to +18 V Anti-blooming drain voltage VABD -0.5 to +18 V Anti-blooming gate voltage VABG -0.5 to +15 V Storage gate voltage V STG -0.5 to +15 V Transfer gate voltage V TG -0.5 to +15 V Reset gate voltage VRG12, VRG34 -0.5 to +15 V Output gate voltage V OG -0.5 to +15 V Horizontal shift register clock voltage VP1H, VP2H -0.5 to +15 V Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. The sensor temperature will increase during high-speed operation. Ta ke heat dissipation measures as required to prevent exceeding the absolute maximum ratings.

CCD linear image sensor S12379 Operating conditions (Ta=25 °C) Parameter Symbol Min. Typ. Max. Unit Output transistor drain voltage VOD1, 2, 3, 4 13 15 17 V Reset drain voltage V RD 12 13 14 V Anti-blooming drain voltage V ABD 12 13 14 V Anti-blooming gate voltage V ABG 005 V Storage gate voltage V STG 005 V Transfer gate voltage High V TGH 81 0 1 2 VLow V TGL 003 Reset gate voltage High VRG12H, VRG34H 789 VLow VRG12L, VRG34L 001 Horizontal shift register clock voltage High V P1HH, VP2HH 5.5 6 6.5 VLow V P1HL, VP2HL 001 Output gate voltage V OG 678 V Substrate voltage V SS -0- V External load resistance R L 2.0 2.2 2.4 k Ω Electrical characteristics (Ta=25 °C, operating conditions: Typ., unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit Output signal frequency/port fc - 20 40 MHz Line rate LR - 36 72 kHz Reset clock frequency frg - 20 40 MHz Horizontal shift register capacitance C P1H, CP2H - 180 - pF Transfer gate capacitance C TG - 110 - pF Reset gate capacitance CRG12, CRG34 -2 0- p F Charge transfer effi ciency*2 CTE 0.99995 0.99999 - - DC output level*3 Vout 8 9 10 V Output impedance*3 Zo - 135 200 Ω Power consumption/port*3 *4 P - 100 140 mW *2: Transfer effi ciency per CCD shift register pixel measured at half the saturation output *3: Varies depending on the load resistance (VOD=15 V, load resistance=2.2 kΩ) *4: Power consumption of the on-chip amp and load resistance Electrical and optical characteristics (Ta=25 °C, operating conditions: Typ., unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit Saturation output voltage Vsat - Fw × Sv - V Saturation charge*5 Fw 15 20 - ke - CCD node sensitivity Sv 19 21 23 μV/e- Dark current*6 Average of all effective pixels DSave - 30 100 e-/msMaximum among all effective pixels DSmax - 40 100 Readout noise*7 Nr - 20 30 e - rms Dynamic range*8 DR 600 1000 - - Spectral response range λ - 200 to 1000 - nm Photoresponse nonuniformity*9 *10 PRNU - ±3 ±10 % Image lag*9 *11 L - 0.1 1 % *5: Saturation charge is within linearity ± 2%. *6: Dark current is halved when cooled by 5 to 7 °C. *7: Readout frequency 40 MHz *8: Dynamic range = saturation charge/readout noise *9: Measured at half the saturation output using an LED light (peak emission wavelength: 470 nm) Fixed pattern noise (peak to peak) Signal × 100 [%]*10: Photoresponse nonuniformity = *11: Percentage of unread signal level when a light pulse is directed so that the output is half the saturation output

CCD linear image sensor S12379 200 100 400 600 800300 500 700 900 (Typ. Ta=25 °C) 1000 1100 Wavelength (nm) Quantum efficiency (%) Photosensitivity [V/(µJ ∙ cm2)] Photosensitivity Quantum efficiency * Spectral response will degrade depending on the transmittance of the quartz glass. Spectral response (without window) Spectral transmittance of window material Wavelength (nm) (Typ. Ta=25 °C) Transmittance (%) 100 300 400200 500 600 700 800 900 1000 KMPDB0414EB KMPDB0303EA Device structure (schematic of CCD chip as viewed from top of dimensional outline) D5 D6 D14 D14 D13 D5 D6 D5 S1 S1 D14 D12S1S2 D5 D6 D14D13 S1 S2 S512 S512 S511 S512 S512 S511S511 RG12 SS OD1 OS1 SS OS2 OD2 RD Photodiode RG34 SS SS OD3 OD4 OS4 OS3 P2H P1H P2H P1H D1 D2 D3 D4 D1 D2 D3 D4 D4 D3 D2 D1 D4 D3 D2 D1 OG TG ABD ABG STG : light shielding region KMPDC0504EB

CCD linear image sensor S12379 Timing chart Parameter Symbol Min. Typ. Max. Unit TG Pulse width Tpwt 400 600 - ns Rise and fall times Tprt, Tpft 10 - - ns P1H, P2H *12 Pulse width Tpwh 12.5 25 - ns Rise and fall times Tprh, Tpfh 6 - - ns Duty ratio - 40 50 60 % RG12, RG34 Pulse width Tpwr 5 6 - ns Rise and fall times Tprr, Tpfr 2 - - ns TG-P1H Overlap time Tovr1 100 200 - ns Tovr2 100 200 - ns Tovr3 100 200 - ns *12: Symmetrical clock pulses should be overlapped at 50% of maximum pulse amplitude. P1H TG Tpwt P2H RG12, RG34 OS Tovr3 Tovr1 Tovr2 Tprt Tpft Output period of one line (integration time) D1 D2 D3 D4 S509 S510 S511 S512 2 3 4 5...522 523 524 525 526Tpwh Tpwr P1H TG P2H RG12, RG34 OS Tprr Tpfr Tprh Tpfh Detail KMPDC0505EB

CCD linear image sensor S12379 Pin connections Pin no. Symbol Function Remark (standard operation)

1 SS Substrate 0 V

2 OS1 Output transistor source 1 R L=2.2 kΩ (OS1-SS)

3 OD1 Output transistor drain 1 +15 V

4 RD Reset drain +13 V

5 ABG Anti-blooming gate 0 V

6 P2H Horizontal shift register clock 2 +6/0 V

7 P1H Horizontal shift register clock 1 +6/0 V

8 RG12 Reset gate 1, 2 +8/0 V

9 OG Output gate +7 V

10 OD4 Output transistor drain 4 +15 V

11 OS4 Output transistor source 4 R

L=2.2 kΩ (OS4-SS)

12 SS Substrate 0 V

13 SS Substrate 0 V

14 OS3 Output transistor source 3 R

L=2.2 kΩ (OS3-SS)

15 OD3 Output transistor drain 3 +15 V

16 STG Storage gate 0 V

17 RG34 Reset gate 3, 4 +8/0 V

18 P1H Horizontal shift register clock 1 +6/0 V

19 P2H Horizontal shift register clock 2 +6/0 V

20 TG Transfer gate +10/0 V

21 ABD Anti-blooming drain +13 V

22 OD2 Output transistor drain +15 V

23 OS2 Output transistor source 2 R

L=2.2 kΩ (OS2-SS)

24 SS Substrate 0 V

16.384 × 0.008 36 ± 0.36 Lead material: FeNi alloy Lead processing: Ni/Au plating Tolerance unless otherwise noted: ±0.1 *1: Distance from package top to photosensitive area *2: Distance from package bottom to photosensitive area *3: Glass thickness 1.2 ± 0.2*1 0.6 ± 0.05*3 1.85 ± 0.2*2 Index mark 18 ± 0.3 Photosensitive surface [A-A’ cross section] 12.7 ± 0.25 0.25 +0.05 -0.03 12.45 ± 0.25 6.225 ± 0.2 27.94 ± 0.3 4 ± 0.5 1.27 ± 0.25 3.035 ± 0.3 3.45 ± 0.35 2 ± 0.15 Note: This product is not hermetically sealed, and therefore moisture may permeate into the package. Storing or using the product in a place with sudden temperature or humidity changes may cause condensation to form inside the package, so avoid such locations. KMPDA0319EA Dimensional outline (unit: mm)

Cat. No. KMPD1149E01 Feb. 2015 DN www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. Information described in this material is current as of February 2015. CCD linear image sensor S12379 Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions

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