S12271

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Large area, high-speed PIN photodiode for UV to near IR photometry S12271 www.hamamatsu.com 1 Structure Absolute maximum ratings Electrical and optical characteristics (Ta=25 °C) Quartz glass window Large photosensitive area: φ4.1 mm High-speed response: 60 MHz (VR=100 V) High UV sensitivity Optical power meters Radiation detectors Features Applications Parameter Specification Unit Package TO-8 mm Photosensitive area size φ4.1 mm Effective photosensitive area 13.2 mm2 Parameter Symbol Specification Unit Reverse voltage VR max 120 V Power dissipation P 50 mW Operating temperature Topr -20 to +60 °C Storage temperature Tstg -55 to +80 °C Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Parameter Symbol Condition Min. Typ. Max. Unit Spectral response range λ - 190 to 1100 - nm Peak sensitivity wavelength λp - 960 - nm Photosensitivity S λ=λp 0.4 0.5 - A/W λ=200 nm 0.08 0.10 - A/W Dark current ID VR=100 V - 0.1 30 nA Temperature coeffi cient of ID TCID - 1.15 - times/ °C Terminal capacitance Ct VR=100 V, f=1 MHz -1 0 2 0 p F Cutoff frequency fc VR=100 V, RL=50 Ω -3 dB -6 0- M Hz Noise equivalent power NEP λ=λp, VR=100 V - 1.5 × 10-14 - W/Hz 1/2 The S12271 is a high-speed Si PIN photodiode having a large photosensitive area of φ4.1 mm. Using quartz glass as the light input window, this photodiode delivers high sensitivity extending to the UV region and is suitable for optical power meters.

Spectral response Photosensitivity temperature characteristics Terminal capacitance vs. reverse voltageDark current vs. reverse voltagePhotosensitivity (A/W) Wavelength (nm) 0.1 190 400 300 600 700500 800 900 1000 1100 0.3 0.2 (Typ. Ta=25 °C) 0.4 0.5 0.6 QE=100% Temperature coefficient (%/°C) Wavelength (nm) -1.0 190 300 400 500 700 600 800 900 1100 1000 -0.5 (Typ.) +0.5 +1.0 +1.5 +2.0 Terminal capacitance Reverse voltage (V) 0.1 (Typ. Ta=25 °C) 1 10 100 1 pF 10 pF 100 pF 1 nF 10 nF Dark current 0.01 0.1 1 10 100 Reverse voltage (V) 10pA (Typ. Ta=25 °C) 100 pA 1 nA 1 pA 10 nA KPINB0386EA KPINB0387EA KPINB0389EAKPINB0388EA

Dimensional outline (unit: mm) Distance from photosensitive area center to cap center -0.4≤X≤+0.4 -0.4≤Y≤+0.4 X Y 12.35 ± 0.1 10.5 ± 0.1 13.9 ± 0.2 (15) 5.0 ± 0.2 2.8 ± 0.2 0.5 max. 7.5 ± 0.2 Index mark ( 1.4) Photosensitive area Quartz glass ġġġ0.45 Lead 4.1 Photosensitive surface Case 1.0 max. KPINA0114EA Precautions against UV light exposure ∙ When UV light irradiation is applied, the product characteristics may degrade. Such examples include degradation of the product ’s UV sensitivity and increase in dark current. This phenomenon varies depending on the irradiation level, irradiation intensity, usage time, and ambient environment and also varies depending on the product model. Before employing the product, we recommend that you check the tolerance under the ultraviolet light environment that the product will be used in. ∙ Exposure to UV light may cause the characteristics to degrade due to gas released from the resin bonding the product’s componen t materials. As such, we recommend that you avoid applying UV light directly on the resin and apply it on only the inside of the photosensitive area by using an aperture or the like.

Cat. No. KPIN1085E03 Oct. 2015 DN Si PIN photodiode S12271 www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. Information described in this material is current as of October, 2015. Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Metal, ceramic, plastic package products Technical information ∙ Si photodiode/Application circuit examples