S1227 HAMAMATSU | Alldatasheet

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Technical content

Features

/K6C High UV sensitivity: QE 75 % (λ=200 nm) /K6C Suppressed IR sensitivity /K6C Low dark current

Applications

/K6C Analytical equipment /K6C Optical measurement equipment, etc. PHOTODIODE Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity S1227 series I General ratings / Absolute maximum ratings Absolute maximum ratings Package Active area size Effective active area Reverse voltage VR Max. Operating temperature Topr Storage temperature Tstg Type No. Dimensional outline/ Window material * (mm) (mm) (mm 2) (V) (°C) (°C) S1227-16BQ ➀ /Q S1227-16BR ➁ /R 2.7 × 15 1.1 × 5.9 5.9 S1227-33BQ ➂ /Q S1227-33BR ➃ /R 6 × 7.6 2.4 × 2.4 5.7 S1227-66BQ ➄ /Q S1227-66BR ➅ /R 8.9 × 10.1 5.8 × 5.8 33 S1227-1010BQ ➆ /Q S1227-1010BR ➇ /R 15 × 16.5 10 × 10 100 5 -20 to +60 -20 to +80 I Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Photo sensitivity S (A/W) Short circuit current Isc 100 lx Spectral response range λ Peak sensitivity wavelength λp λp 200 nm He-Ne Laser Min. Typ. Dark current ID V R =10 mV Max. Temp. coefficient TCID Rise time tr VR=0 V RL=1 kΩ Terminal capacitance Ct VR=0 V f=10 kHz Shunt resistance Rsh V R =10 mV (GΩ ) NEPType No. (nm) (nm) Min. Typ. 633 nm (µA) (µA) (pA) (times/° C) (µs) (pF) Min. Typ. (W/Hz1/2) S1227-66BR 320 to 1000 0.43 - - 0.39 13 19 20 2 950 0.5 5 4.2 × 10-15 S1227-1010BR 320 to 1000 720 0.43 - - 0.39 36 53 50 1.12 7 3000 0.2 2 6.7 × 10-15 * Window material Q: quartz glass, R: resin coating

Si photodiode S1227 series 0.1 PHOTO SENSITIVITY (A/W) 190 400 600 800 1000 WAVELENGTH (nm) 0.3 0.2 (Typ. Ta=25 ˚C) 0.4 0.5 0.6 0.7 S1227-BR S1227-BQ S1227-BQ S1227-BR I Spectral response I Photo sensitivity temperature characteristic KSPDB0094EA TEMPERATURE COEFFICIENT (%/ ˚C) WAVELENGTH (nm) (Typ. ) 190 400 600 800 1000 +1.0 +0.5 +1.5 -0.5 KSPDB0030EB RISE TIME LOAD RESISTANCE ( Ω ) (Typ. Ta=25 ˚C, VR =0 V) 10210 ns 103 104 105 S1227-16BQ/BR, -33BQ/BR S1227-1010BQ/BR S1227-66BQ/BR 100 ns 1 µs 10 µs 100 µs 1 ms KSPDB0095EA DARK CURRENT REVERSE VOLTAGE (V) (Typ. Ta=25 ˚C) 0.01 100 fA 0.1 1 10 1 pA 10 pA 100 pA 1 nA S1227-66BQ/BR S1227-16BQ/BR S1227-33BQ/BR S1227-1010BQ/BR KSPDB0096EB SHUNT RESISTANCE AMBIENT TEMPERATURE ( ˚C) (Typ. VR =10 mV) - 2 00 2 04 06 08 010 kΩ 100 kΩ 1 MΩ 10 MΩ 100 MΩ 1 GΩ 10 GΩ 100 GΩ 1 TΩ S1227-33BQ/BR S1227-16BQ/BR S1227-66BQ/BR S1227-1010BQ/BR I Shunt resistance vs. ambient temperature KSPDB0097EA I Rise time vs. load resistance I Dark current vs. reverse voltage

Si photodiode S1227 series KSPDA0094EA KSPDA0095EA KSPDA0096EA KSPDA0097EA ➂ S1227-33BQ ➃ S1227-33BR I Dimensional outlines (unit: mm) ➀ S1227-16BQ ➁ S1227-16BR 8.5 ± 0.2 2.7 ± 0.10.5 1.5 ± 0.16.2 ANODE MARK 0.5 LEAD 12.2 13.5 ± 0.13 15 ± 0.15 0.85 ACTIVE AREA HOLE (2 ×) 0.8 PHOTOSENSITIVE SURFACE 8.5 ± 0.2 ANODE MARK 13.5 ± 0.13 15 ± 0.15 0.35 ACTIVE AREA HOLE (2 ×) 0.8 0.5 LEAD PHOTOSENSITIVE SURFACE Resin coating may extend a maximum of 0.1 mm above the upper surface of the package. 7.6 ± 0.1 6.0 ± 0.1 ACTIVE AREA 0.1 2.0 ± 0.110.5 0.75 0.35 4.5 ± 0.2 ANODE TERMINAL MARK 0.5 LEAD PHOTOSENSITIVE SURFACE 6.6 ± 0.3 5.0 ± 0.3 7.6 ± 0.1 6.0 ± 0.1 ACTIVE AREA 2.0 ± 0.110.5 0.65 0.35 6.6 ± 0.3 4.5 ± 0.2 5.0 ± 0.3 ANODE TERMINAL MARK 0.5 LEAD PHOTOSENSITIVE SURFACE Resin coating may extend a maximum of 0.1 mm above the upper surface of the package.

HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2004 Hamamatsu Photonics K.K. Si photodiode S1227 series Cat. No. KSPD1036E04 Aug. 2004 DN ANODE TERMINAL MARK 0.5 LEAD PHOTOSENSITIVE SURFACE 16.5 ± 0.2 15.0 ± 0.15 ACTIVE AREA 2.15 ± 0.110.5 0.8 0.3 15.1 ± 0.3 12.5 ± 0.2 13.7 ± 0.3 Resin coating may extend a maximum of 0.1 mm above the upper surface of the package. 10.1 ± 0.1 8.9 ± 0.1 ACTIVE AREA 2.0 ± 0.110.5 0.65 0.3 9.2 ± 0.3 7.4 ± 0.2 8.0 ± 0.3 ANODE TERMINAL MARK 0.5 LEAD PHOTOSENSITIVE SURFACE Resin coating may extend a maximum of 0.1 mm above the upper surface of the package. 10.1 ± 0.1 8.9 ± 0.1 ACTIVE AREA 0.1 2.0 ± 0.110.5 0.75 0.3 9.2 ± 0.3 7.4 ± 0.2 8.0 ± 0.3 ANODE TERMINAL MARK 0.5 LEAD PHOTOSENSITIVE SURFACE ➆ S1227-1010BQ ➇ S1227-1010BR KSPDA0100EA KSPDA0101EA KSPDA0098EA KSPDA0099EA ➄ S1227-66BQ ➅ S1227-66BR ANODE TERMINAL MARK 0.5 LEAD PHOTOSENSITIVE SURFACE 16.5 ± 0.2 15.0 ± 0.15 ACTIVE AREA 2.15 ± 0.110.5 0.9 0.3 15.1 ± 0.3 12.5 ± 0.2 13.7 ± 0.3 0.1