S11961-01CR

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Distance linear image sensor S11961-01CR Measures the distance to an object by TOF (Time-Of-Flight) method 1www.hamamatsu.com The distance image sensors are designed to measure the distance to an object by TOF method. When used in combination with a pulse modulated light source, this sensor outputs phase difference information on the timing that the light is emitted and received. The sensor output signals are arithmetically processed by an external signal processing circuit or a PC to obtain distance data. Parameter Specifi cation Unit Image size 5.12 × 0.05 mm Pixel pitch 20 μm Pixel height 50 μm Number of pixels 272 pixels Number of effective pixels 256 pixels Package 22-pin PWB - Window material AR-coated glass - Note: This product is not hermetically sealed. Parameter Symbol Condition Value Unit Analog supply voltage Vdd(A) Ta=25 °C -0.3 to +6 V Digital supply voltage Vdd(D) Ta=25 °C -0.3 to +6 V Analog input terminal voltage Pixel amplifi er Vsf Ta=25 °C -0.3 to Vdd(A) + 0.3 VPixel reset Vr Photosensitive area Vpg Digital input terminal voltage Pixel reset pulse p_res Ta=25 °C -0.3 to Vdd(D) + 0.3 V Signal sampling pulse phis Master clock pulse mclk Signal readout trigger pulse trig Output signal synchronous pulse dclk Charge transfer clock pulse voltage VTX1, VTX2, VTX3 Ta=25 °C -0.3 to Vdd(A) + 0.3 V Operating temperature Topr No dew condensation*1 -25 to +85 °C Storage temperature Tstg No dew condensation*1 -40 to +100 °C Refl ow soldering conditions*2 Tsol 260 °C max. 2 times (see P.8) - *1: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. *2: JEDEC level 3 Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. High-speed charge transfer structure Wide dynamic range, low noise by non-destructive readout Operates with minimal detection errors even under fl uctuating (charge drain function) Real-time distance measurement Obstacle detection (self-driving, robots, etc.) Security (intrusion detection, etc.) Shape recognition (logistics, robots, etc.) Motion capture Features Applications Structure Absolute maximum ratings

Distance linear image sensor S11961-01CR Recommended terminal voltage (Ta=25 °C) Electrical characteristics [Ta=25 °C, Vdd(A)=Vdd(D)=5 V] Parameter Symbol Min. Typ. Max. Unit Analog supply voltage Vdd(A) 4.75 5 5.25 V Digital supply voltage Vdd(D) 4.75 5 5.25 V Bias voltage Pixel amplifi er Vsf 4.5 5 Vdd(A) V Pixel reset Vr 4 4.25 4.5 V Photosensitive area Vpg 0.8 1.0 1.2 V Pixel reset pulse voltage High level p_res Vdd(D) × 0.8 - - VLow level - - Vdd(D) × 0.2 Signal sampling pulse voltage High level phis Vdd(D) × 0.8 - - VLow level - - Vdd(D) × 0.2 Master clock pulse voltage High level mclk Vdd(D) × 0.8 - - VLow level - - Vdd(D) × 0.2 Signal readout trigger pulse voltage High level trig Vdd(D) × 0.8 - - VLow level - - Vdd(D) × 0.2 Output signal synchronous pulse voltage High level dclk Vdd(D) × 0.8 - - VLow level - - Vdd(D) × 0.2 Parameter Symbol Condition Min. Typ. Max. Unit Clock pulse frequency f(mclk) 1 M - 5 M Hz Video data rate VR - f(mclk) - Hz Current consumption Ic Dark state - 15 30 mA Electrical and optical characteristics [Ta=25 °C, Vdd(A)=Vdd(D)=5 V, Vsf=5 V, Vr=4.25 V, MCLK=5 MHz] Parameter Symbol Min. Typ. Max. Unit Spectral response range λ 400 to 1100 nm Peak sensitivity wavelength λp - 800 - nm Photosensitivity*3 S 1.05 × 1012 2.1 × 1012 4.2 × 1012 V/W·s Dark output Vd - 0.5 10 V/s Random noise RN - 0.4 0.8 mV rms Dark output voltage*4 Vor 2.95 3.3 4.35 V Saturation output voltage Vsat - - 2 V Sensitivity ratio*5 SR 0.7 - 1.43 - Photoresponse nonuniformity*6 PRNU - - ±10 % *3: Monochromatic wavelength source (λ=805 nm) *4: Output voltage right after reset in dark state *5: Sensitivity ratio of Vout1 (VTX1=3 V, VTX2=VTX3=0 V) to Vout2 (VTX2=3 V, VTX1=VTX3=0 V) *6: Photoresponse nonuniformity (PRNU) is the output nonuniformity that occurs when the entire photosensitive area is uniformly illuminated by light which is 50% of the saturation exposure level. PRNU is measured using 256 pixels excluding 8 pixels each a t both ends, and is defi ned as follow: PRNU = ∆X/X × 100 [%] X: average output of all pixels, ∆X: difference between X and maximum or minimum output

Distance linear image sensor S11961-01CR Spectral response Block diagram VTX3 VTX2 VTX1 p_res phis mclk trig Vdd(A) GND GND Vout1 Vout2 dclk Vr Vsf Vpg Vdd(D) 115 14 17 16 GNDGNDGNDGND 18192021 GND Horizontal shift register Sample & hold circuit Bias generator Buffer amplifier Photodiode array 272 pixels (number of effective pixels: 256 pixels) KMPDC0430EC 200 300 400 500 600 700 800 900 1000 1100 1200 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 (Typ. Ta=25 °C) Wavelength (nm) Relative sensitivity KMPDB0375EB Basic connection example Buffer amplifier Buffer amplifier Vout 2 Vout 1 KMPDC0486EA

Distance linear image sensor S11961-01CR Timing chart Output ch VTX enable VTX enable mclk p_res trig Vout1 Vout2 dclk VTX1, 2, 3 Light phis thp(p_res) thp(phis) t2 t7 t9 t10 t11 t5 t4 1 2 271 272 tlp(VTX1)thp(VTX1) tpi(VTX) tlp(VTX3) KMPDC0431EB Output ch 1 2 271 272 VTX1 VTX2 VTX3 tlp(VTX2)thp(VTX2) thp(VTX3) mclk mclk dclk Vout1 Vout2 0.1 V tr(mclk) tf(mclk) tr(phis) tf(phis) tr(trig) tf(trig)tr(p_res) tf(p_res) tf(vout)tr(vout) td(vout) tr(dclk)tf(dclk) td(dclk) p_res phis trig p_res mclk KMPDC0431EB KMPDC0432EA

Distance linear image sensor S11961-01CR Frame rate=1/(Time per frame) =1/(Integration time + Readout time) Integration time: It is necessary to be changed by the required distance accuracy and usage environment factors such as fl uctuating background light. Readout time= 1 Clock pulse frequency × Number of horizontal pixels =Time per clock (Readout time per pixel) × Number of horizontal pixels Calculation example of readout time (clock pulse frequency: 5 MHz, number of horizontal pixels: 272) Readout time= 1 5 × 106 [Hz] × 272 =200 [ns] × 272 =0.0544 [ms] When operating in non-destructive readout mode: Time per frame=Integration time + (Readout time × Non-destructive readout count) Calculation method of frame rate

Distance linear image sensor S11961-01CR Parameter Symbol Min. Typ. Max. Unit Master clock pulse duty ratio - 45 50 55 % Master clock pulse rise and fall times tr(mclk), tf(mclk) 0 - 20 ns Pixel reset pulse high period thp(p_res) 10 - - μs Pixel reset pulse rise and fall times tr(p_res), tf(p_res) 0 - 20 ns Signal sampling pulse high period thp(phic) 1 - - μs Signal sampling pulse rise and fall times tr(phic), tf(phic) 0 - 20 ns Signal readout trigger pulse rise and fall times tr(trig), tf(trig) 0 - 20 ns Time from rising edge of master clock pulse to pixel reset pulse t0 0 - - ns Time from rising edge of pixel reset pulse to rising edge of signal sampling pulse t1 1 - - μs Time from falling edge of signal sampling pulse to rising edge of signal readout trigger pulse t2 1.2 - - μs Time from rising edge of master clock pulse to rising edge of signal readout trigger pulse t3 1/4 × 1/f(mclk) - 1/2 × 1/f(mclk) s Time from rising edge of signal readout trigger pulse to rising edge of master clock pulse t4 1/4 × 1/f(mclk) - 1/2 × 1/f(mclk) s Time from rising edge of master clock pulse to falling edge of signal readout trigger pulse t5 1/4 × 1/f(mclk) - 1/2 × 1/f(mclk) s Time from falling edge of signal readout trigger pulse to rising edge of master clock pulse t6 1/4 × 1/f(mclk) - 1/2 × 1/f(mclk) s Time from rising edge of master clock pulse (after reading signals from all pixels) to rising edge of output signal sampling pulse t7 1/f(mclk) - - s Time from rising edge of master clock pulse (after reading signals from all pixels) to rising edge of pixel reset pulse t8 1/f(mclk) - - s Time from rising edge of master clock pulse to falling edge of output signal synchronous pulse* 7 td(dclk) 0 25 50 ns Output signal synchronous pulse output voltage rise time (10 to 90%)*7 tr(dclk) - 20 40 ns Output signal synchronous pulse output voltage fall time (10 to 90%)*7 tf(dclk) - 20 40 ns Settling time of output signal 1, 2 (10 to 90%)*7 *8 tr(Vout), tf(Vout) - 35 70 ns Time from rising edge of master clock pulse to output signal 1, 2 (output 50%)* 7 td(Vout) - 40 80 ns Charge transfer clock pulse interval tpi(VTX) 60 - - ns Charge transfer clock pulse (VTX1) high period thp(VTX1) 30 - - ns Charge transfer clock pulse (VTX1) low period tlp(VTX1) - tpi(VTX) - thp(VTX2) - thp(VTX3) -n s Charge transfer clock pulse (VTX2) high period thp(VTX2) 30 - - ns Charge transfer clock pulse (VTX2) low period tlp(VTX2) - tpi(VTX) - thp(VTX1) - thp(VTX3) -n s Charge transfer clock pulse (VTX3) high period thp(VTX3) 0 - - ns Charge transfer clock pulse (VTX3) low period tlp(VTX3) - tpi(VTX) - thp(VTX1) - thp(VTX2) -n s Charge transfer clock pulse voltage rise time tr(VTX) - 3 - ns Charge transfer clock pulse voltage fall time tf(VTX) - 3 - ns Charge transfer clock pulse voltage High level VTX1, VTX2, VTX3 -3- V Low level - 0 - V Time from rising edge of signal readout trigger pulse to start VTX operation t9 1/f(mclk) - - s Time from finish VTX operation to rising edge of output signal synchronous pulse t10 1/f(mclk) - - s Time from fi nish VTX operation to rising edge of pixel reset pulse t11 1/f(mclk) - - s *7: C L=3 pF *8: Output voltage=0.1 V

Distance linear image sensor S11961-01CR Parameter Symbol Min. Typ. Max. Unit Charge transfer clock pulse internal load capacitance CLTX -2 5- p F Input terminal capacitance (Ta=25 °C, Vdd=5 V) Dimensional outline (unit: mm) Photosensitive area 5.12 × 0.5 Photosensitive surface 9.1 2.0 1.0 10.6 Hole ϕ0.2 4.3 5.8 1.10.8 P0.8 × 5=4.0 5.3 10.1 P1.27 × 4=5.08 1.27 6 12 22 18 71 1 (22 ×)ġϕ0.2 Tolerance unless otherwise noted: ±0.2, ±2° Electrode (22 ×)ȁ 0.4 KMPDA0298EB Recommended land pattern (unit: mm) 0.4 P0.8 × 5=4.0 5.3 0.4 P1.27 × 4=5.08 10.1 KMPDC0437EB

Distance linear image sensor S11961-01CR Pin connections Pin no. Symbol I/O Description

1 Vr I Bias voltage (pixel reset)

2 VTX3 I Charge transfer clock pulse 3

3 VTX2 I Charge transfer clock pulse 2

4 VTX1 I Charge transfer clock pulse 1

5 p_res I Pixel reset pulse 6 phis I Signal sampling pulse 7 mclk I Master clock pulse 8 trig I Signal readout trigger pulse 9 dclk O Output signal synchronous pulse

10 Vdd(D) I Digital supply voltage

11 GND I Ground

12 Vout2 O Output signal 1

13 Vout1 O Output signal 2

14 GND I Ground

15 Vdd(A) I Analog supply voltage

16 Vpg I Bias voltage (photosensitive area)

17 Vsf I Bias voltage (pixel ampli fi er)

18 GND I Ground

19 GND I Ground

20 GND I Ground

21 GND I Ground

22 GND I Ground

Note: Connect an impedance converting buffer amplifi er to Vout1/Vout2 so as to minimize the current fl ow. Measured example of temperature profile with our hot-air reflow oven for product testing ∙ This product supports lead-free soldering. After unpacking, store it in an environment at a temperature of 30 °C or less and a humidity of 60% or less, and perform soldering within 168 hours. ∙ The effect that the product receives during refl ow soldering varies depending on the circuit board and re fl ow oven that are used. Before actual refl ow soldering, check for any problems by testing out the refl ow soldering methods in advance. KMPDB0381EA Time Temperature Preheat 60 to 120 s Soldering 40 s max. 300 °C 230 °C 190 °C 170 °C 260 °C max. Preheat 60 to 120 s Soldering 40 s max.

Cat. No. KMPD1140E04 Jun. 2015 DN www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. Information described in this material is current as of June, 2015. Distance linear image sensor S11961-01CR Related information ∙ Disclaimer ∙ Surface mount type products ∙ Image sensors Precautions www.hamamatsu.com/sp/ssd/doc_en.html