S11638

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Achieves high sensitivity by adding an amplifi er to each pixel www.hamamatsu.com 1 Pixel size: 14 × 42 μm Position detection2048 pixels Image readingEffective photosensitive area length: 28.672 mm EncodersHigh sensitivity: 160 V/(lx·s) Barcode readers Spectrometers Simultaneous charge integration for all pixels Variable integration time function (electronic shutter function)

5 V single power supply operation

Built-in timing generator allows operation with only start and clock pulse inputs Video data rate: 10 MHz max. Small input terminal capacitance: 5 pF Absolute maximum ratings Structure Parameter Symbol Condition Value Unit Supply voltage Vdd Ta=25 °C -0.3 to +6 V Clock pulse voltage V(CLK) Ta=25 °C -0.3 to +6 V Start pulse voltage V(ST) Ta=25 °C -0.3 to +6 V Operating temperature*1 Topr -40 to +65 °C Storage temperature*1 Tstg -40 to +65 °C *1: No condensation Note: Exceeding the absolute maximum r atings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Parameter Specifi cation Unit Number of pixels 2048 - Pixel size 14 × 42 μm Photosensitive area length 28.672 mm Package LCP (liquid crystal polymer) - Window material Quartz - The S11638 is a CMOS linear image sensor that achieves high sensitivity by adding an ampli fi er to each pixel. It has a long photosensitive area (effective photosensitive area length: 28.672 mm) consisting of 2048 pixels, each with a pixel size of 14 × 42 μm. Compared to our previous product, the S11638 has high sensitivity in UV region. Features Applications

CMOS linear image sensor S11638 Recommended terminal voltage (Ta=25 °C) Electrical characteristics [Ta=25 °C, Vdd=5 V, V(CLK)=V(ST)=5 V] Electrical and optical characteristics [Ta=25 °C, Vdd=5 V, V(CLK)=V(ST)=5 V, f(CLK)=10 MHz] Parameter Symbol Min. Typ. Max. Unit Supply voltage Vdd 4.75 5 5.25 V Clock pulse voltage High level V(CLK) 3 Vdd Vdd + 0.25 V Low level 0 - 0.3 V Start pulse voltage High level V(ST) 3 Vdd Vdd + 0.25 V Low level 0 - 0.3 V Parameter Symbol Min. Typ. Max. Unit Clock pulse frequency f(CLK) 200 k - 10 M Hz Video data rate VR - f(CLK) - Hz Output impedance Zo 70 - 260 Ω Current consumption*2 *3 I 2 03 05 0 m A *2: f(CLK)=10 MHz *3: Current consumption increases as the clock pulse frequency increases. The current consumption is 10 mA typ . at f(CLK)=200 kHz. Parameter Symbol Min. Typ. Max. Unit Spectral response range λ 200 to 1000 nm Peak sensitivity wavelength λp - 700 - nm Photosensitivity*4 R - 160 - V/(lx·s) Conv ersion effi ciency*5 CE -1 3- μV/e- Dark output voltage*6 Vd 0 0.4 4 mV Saturation output voltage*7 Vsat 0.8 1.2 1.8 V Readout noise Nr 0.3 0.6 1.5 mV rms Dynamic range 1*8 DR1 - 2000 - times Dynamic range 2*9 DR2 - 3000 - times Output offset voltage Vo 0.3 0.5 0.9 V Photoresponse nonuniformity*4 *10 PRNU - ±2 ±10 % Image lag*11 IL - - 0.1 % *4: Measured with a tungsten lamp of 2856 K *5: Output voltage generated per one electron *6: Integration time Ts=10 ms *7: Difference from Vo *8: DR1= Vsat/Nr *9: DR2= Vsat/Vd Integration time T s=10 ms Dark output voltage is proportional to the integration time and so the shorter the integration time, the wider the dynamic range. *10: Photoresponse nonuniformity (PRNU) is the output nonuniformity that occurs when the entire photosensitive area is uniformly illuminated by light which is 50% of the satur ation exposure lev el. PRNU is measured using 2042 pixels excluding 3 pixels each at both ends, and is defi ned as follows: PRNU= ΔX / X × 100 (%) X: average output of all pixels, ΔX: difference between X and maximum output or minimum output *11: Signal components of the preceding line data that still remain even after the data is read out in a saturation output state. Image lag increases when the output exceeds the satur ation output voltage. Input terminal capacitance (Ta=25 °C, Vdd=5 V) Parameter Symbol Min. Typ. Max. Unit Clock pulse input terminal capacitance C(CLK) - 5 - pF Start pulse input terminal capacitance C(ST) - 5 - pF

CMOS linear image sensor S11638 Spectral response (typical example) Block diagram KMPDB0354EA KMPDC0398EA Wavelength (nm) Relative sensitivity (%) 200 400 600 800 1000 100 (Ta=25 °C) Amp array Bias generator Hold circuit Photodiode array Shift register Timing generator Trig Video Vdd EOS CLK ST 1 12 Vss 2 11 1523

CMOS linear image sensor S11638 Output waveform of one pixel GND GND

0.5 V (output offset voltage)

1.7 V (saturation output voltage=1.2 V) GND CLK Trig Video 5 V/div. 5 V/div. 1 V/div. 20 ns/div. GND GND 1.7 V (saturation output voltage=1.2 V) GND CLK Trig Video 5 V/div. 5 V/div. 1 V/div. 200 ns/div. The timing for acquiring the Video signal is synchronized with the rising edge of a trigger pulse (See red arrow below.). f(CLK)=VR=1 MHz f(CLK)=VR=10 MHz

CMOS linear image sensor S11638 Timing chart KMPDC0399EB Parameter Symbol Min. Typ. Max. Unit Start pulse width interval*12 tpi(ST) 98/f(CLK) - - s Start pulse high period*12 *13 thp(ST) 6/f(CLK) - - s Start pulse low period tlp(ST) 92/f(CLK) - - s Start pulse rise and fall times tr(ST), tf(ST) 0 10 30 ns Clock pulse duty - 45 50 55 % Clock pulse rise and fall times tr(CLK), tf(CLK) 0 10 30 ns *12: Dark output increases if the start pulse period or the start pulse high period is lengthened. *13: The integration time equals the high period of ST plus 48 CLK cycles. The shift register starts operation at the rising edge of CLK immediately after ST goes low The integration time can be changed by changing the ratio of the high and low periods of ST. If the fi rst Trig pulse after ST goes low is counted as the fi rst pulse, the Video signal is acquired at the rising edge of the 89th Trig pulse. CLK ST tf(CLK) tf(ST)tr(ST) tr(CLK) tlp(ST)thp(ST) tpi(ST) 1/f(CLK) art (S11638) 1 89 2 34 2048 1 5 1 2 34 51 52 53 87 88 89 CLK ST Video Trig EOS thp(ST) tlp(ST) tpi(ST) 87 clocks 2048 Integration time

CMOS linear image sensor S11638 Operation example thp(ST)=204.8 µstlp(ST)=9.2 µs ST tpi(ST)=214 µs KMPDC0366EB When the clock pulse frequency is maximized (video data rate is also maximized), the time of one scan is minimized, and the int egra- tion time is maximized (for outputting signals from all 2048 channels) Clock pulse frequency = Video data rate = 10 MHz Start pulse cycle = 2140/f(CLK) = 2140/10 MHz = 214 μs High period of start pulse = Start pulse cycle - Start pulse’s low period min. = 2140/f(CLK) - 92/f(CLK) = 2140/10 MHz - 92/10 MHz = 204.8 μs Integration time is equal to the high period of start pulse + 48 cycles of clock pulses, so it will be 204.8 + 4.8 = 209.6 μs. Dimensional outline (unit: mm) Photosensitive area 28.672 41.6 ± 0.2 Tolerance unless otherwise noted: ±0.1 *1: Distance from window upper surface to photosensitive surface *2: Distance from package bottom to photosensitive surface *3: Glass thickness 2.54 0.51 27.94 14.336 ± 0.3 9.1 ± 0.1 10.2 ± 0.5 ±15° 10.02 ± 0.3 4.55 ± 0.4 1.4 ± 0.2*2 1.35 ± 0.2*1 0.5 ± 0.05*3 1 ch 0.2 4.0 ± 0.5 3.0 Photosensitive area 0.042 Direction of scan ±15° Photosensitive surface a a-a’ cross section KMPDA0283EB

CMOS linear image sensor S11638 Pin no. Symbol I/O Description Pin no. Symbol I/O Description

1 Vdd I Supply voltage 13 Video O Video signal

2 Vss GND 14 NC No connection

3 CLK I Clock pulse 15 EOS O End of scan

4 NC No connection 16 NC No connection

5 NC No connection 17 NC No connection

6 NC No connection 18 NC No connection

7 NC No connection 19 NC No connection

8 NC No connection 20 NC No connection

9 NC No connection 21 NC No connection

10 NC No connection 22 NC No connection

11 Vss GND 23 Trig O Trigger pulse for video signal

12 Vdd I Supply voltage 24 ST I Start pulse

Note: Leave the “NC” terminals open and do not connect them to GND. Connect a buffer amplifi er for impedance conversion to the video output terminal so as to minimize the current fl ow. As the buffer amplifi er, use a high input impedance operational amplifi er with JFET or CMOS input. Pin connections KMPDC0400EA Application circuit example ST Trig NC NC NC NC NC NC NC EOS NC Video Vdd Vss CLK NC NC NC NC NC NC NC Vss Vdd 22 µF/25 V 0.1 µF 0.1 µF 0.1 µF +5 V +5 V +5 V Trig EOS ST CLK 74HC541 74HC541 22 µF/25 V 22 µF/25 V 22 µF/25 V 22 µF/25 V 22 µF/25 V Video S11638 LT1818 22 pF -5 V 51 Ω 100 Ω 82 Ω 82 Ω 0.1 µF 0.1 µF 0.1 µF +5 V +5 V

CMOS linear image sensor S11638 Cat. No. KMPD1130E04 Nov. 2013 DN www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. Information described in this material is current as of November, 2013. Precautions (1) Electrostatic countermeasures This device has a built-in protection circuit against static electrical char ges. However, to prevent destroying the device with electro- static charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. Also protect this device from surge voltages which might be caused by peripheral equipment. (2) Light input window If dust or dirt gets on the light input window, it will show up as black blemishes on the image. When cleaning, avoid rubbing t he window surface with dry cloth or dry cotton swab, since doing so may generate static electricity. Use soft cloth, paper or a co tton swab moistened with alcohol to wipe dust and dirt off the window surface. Then blow compressed air onto the window surface so that no spot or stain remains. (3) Soldering To prevent damaging the device during soldering, take precautions to prevent excessive soldering temperatures and times. Solder - ing should be performed within 5 seconds at a soldering temperature below 260 °C. (4) Operating and storage environments Always observe the rated temperature range when handling the device. Operating or storing the device at an excessively high tem - perature and humidity may cause variations in performance characteristics and must be avoided. (5) UV exposure This device is designed to suppress performance deterioration due to UV exposure. Even so, avoid unnecessary UV exposure to the device. Also, be careful not to allow UV light to strike the cemented portion of the glass. Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Notice ∙ Image sensors/Precautions