S11500-1007 HAMAMATSU | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 7
Technical content
Enhanced near infrared sensitivity: QE=40% (λ=1000 nm), back-thinned FFT-CCD S11500-1007 www.hamamatsu.com IR-enhanced The S11500-1007 is an FFT-CCD image sensor for photometric applications that offers improved sensitivity in the near infrared region at wavelengths longer than 800 nm. Our unique technology in laser processing was used to form a MEMS structure on the back side of the CCD. This allows the S11500-1007 to have much higher sensitivity than our conventional product (S7030-1007). In addition to having high near infrared sensitivity, the S11500-1007 can be used as an image sensor with a long active area in the direction of the sensor height by binning operation, making it suitable for detectors in Raman spectroscopy. Binning operation also ensures even higher S/N and signal processing speed compared to methods that use an external circuit to add signals digitally. The S11500-1007 has a pixel size of 24 × 24 μm and active area of 24.576 (H) × 2.928 (V) mm (1024 × 122 pixels). The S11500- 1007 is pin compatible with the S7030-1007, and so operates under the same drive conditions. Features Applications Enhanced near infrared sensitivity: QE=40% (λ=1000 nm) Pixel size: 24 × 24 μm Line, pixel binning Wide spectral response range Low readout noise Wide dynamic range MPP operation Raman spectrometer, etc. Spectral response (without window)*1 Quantum efficiency (%) Wavelength (nm) (Typ. Ta=25 °C) 200 400 600 800 1000 1200 100 Conventional type (S7030-1007) S11500-1007 Front-illuminated CCD *1: Spectral response with quartz glass is decreased according to the spectral transmittance characteristic of window material. KMPDB0325EC
CCD area image sensor S11500-1007 General ratings Absolute maximum ratings Operating conditions (MPP mode, Ta=25 °C) Parameter Speci fi cation Pixel size 24 (H) × 24 (V) μm Number of total pixels 1044 × 128 Number of active pixels 1024 × 122 Active area [mm (H) × mm (V)] 24.576 (H) × 2.928 (V) mm Vertical clock phase 2-phase Horizontal clock phase 2-phase Output circuit One-stage MOSFET source follower Package 24-pin ceramic DIP (refer to dimensional outline) Window Quartz glass Parameter Symbol Min. Typ. Max. Unit Operating temperature*2 Topr -50 - +50 °C Storage temperature Tstg -50 - +70 °C Output transistor drain voltage VOD -0.5 - +25 V Reset drain voltage VRD -0.5 - +18 V Vertical input source voltage VISV -0.5 - +18 V Horizontal input source voltage VISH -0.5 - +18 V Vertical input gate voltage VIG1V, VIG2V -10 - +15 V Horizontal input gate voltage VIG1H, VIG2H -10 - +15 V Summing gate voltage VSG -10 - +15 V Output gate voltage VOG -10 - +15 V Reset gate voltage VRG -10 - +15 V Transfer gate voltage VTG -10 - +15 V Vertical shift register clock voltage VP1V, VP2V -10 - +15 V Horizontal shift register clock voltage VP1H, VP2H -10 - +15 V *2: Package temperature Parameter Symbol Min. Typ. Max. Unit Output transistor drain voltage VOD 18 20 22 V Reset drain voltage VRD 11.5 12 12.5 V Output gate voltage VOG 135 V Substrate voltage VSS -0- V Test point Vertical input source VISV - VRD -V Horizontal input source VISH - VRD -V Vertical input gate VIG1V, VIG2V -9 -8 - V Horizontal input gate VIG1H, VIG2H -9 -8 - V Vertical shift register clock voltage High VP1VH, VP2VH 468 VLow VP1VL, VP2VL -9 -8 -7 Horizontal shift register clock voltage High VP1HH, VP2HH 468 VLow VP1HL, VP2HL -9 -8 -7 Summing gate voltage High VSGH 468 VLow VSGL -9 -8 -7 Reset gate voltage High VRGH 468 VLow VRGL -9 -8 -7 Transfer gate voltage High VTGH 468 VLow VTGL -9 -8 -7 External load resistance RL 20 22 24 kΩ
CCD area image sensor S11500-1007 Electrical and optical characteristics (Ta=25 °C, unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit Saturation output voltage Vsat - Fw × Sv - V Full well capacity Vertical Fw 240 320 - ke- Horizontal*5 800 1000 - CCD node sensitivity Sv 1.8 2.2 - μV/e- Dark current*6 (MPP mode) 25 °C DS - 100 400 e-/pixel/s0 °C - 10 40 Readout noise*7 Nr - 8 16 e - rms Dynamic range*8 Line binning DR 100000 125000 - - Area scanning 30000 40000 - - Photo response non-uniformity*9 PRNU - ±3 ±10 % Spectral response range λ - 200 to 1100 - nm Cosmetics Point defect*10 White spots --0 - Black spots - - 10 - Cluster defect*11 --3 - Column defect*12 --0 - *5: The linearity is ±1.5 %. *6: Dark current nearly doubles for every 5 to 7 °C increase in temperature. *7: Measured with a HAMAMATSU C4880 digital CCD camera with a CDS circuit (sensor temperature: -40 °C, operating frequency: 150 kHz) *8: Dynamic range (DR) = Full well capacity / Readout noise *9: Measured at one-half of the saturation output (full well capacity) using LED light (peak emission wavelength: 560 nm) *10: White spots Pixels whose dark current is higher than 1 ke- after one-second integration at 0 °C. Black spots Pixels whose sensitivity is lower than one-half of the average pixel output. (measured with uniform light producing one-half of the saturation charge) *11: 2 to 9 contiguous defective pixels *12: 10 or more contiguous defective pixels Fixed pattern noise (peak to peak) Signal × 100 [%]Photo response non-uniformity = Electrical characteristics (Ta=25 °C) Parameter Symbol Min. Typ. Max. Unit Signal output frequency fc - 0.25 1 MHz Vertical shift register capacitance CP1V, CP2V 3000 - pF Horizontal shift register capacitance CP1H, CP2H - 180 - pF Summing gate capacitance CSG -3 0- p F Reset gate capacitance CRG -3 0- p F Transfer gate capacitance CTG -7 5- p F Charge transfer effi ciency*3 CTE 0.99995 0.99999 - - DC output level Vout 14 16 18 V Output impedance Zo - 3 4 kΩ Power consumption*4 P - 13 14 mW *3: Charge transfer effi ciency per pixel, measured at half of the full well capacity *4: Power consumption of the on-chip amplifi er plus load resistance
CCD area image sensor S11500-1007 Dark current vs. temperature Spectral transmittance characteristic KMPDB0312EA Type no. Window material S11500-1007 Quartz glass *13 *13: Resin sealing Window material 100 200 Wavelength (nm) Transmittance (%) 300 400 500 600 700 800 900 1000 1100 1200 100 (Typ. Ta=25 °C) Quartz glass -50 -40 -30 -20 0-10 10 20 30 Temperature (°C) 0.01 0.1 100 1000 Dark current (e-/pixel/s) (Typ.) KMPDC0364EA Device structure (conceptual drawing of top view) 2322 21 20 1415 893 4 5 2-bevel signal out2 n 4 blank pixels 4 blank pixels V=122 H=1024 4-bevel Thinning Thinning 1 23 45 V H 6-bevel 6-bevel 2 n signal out KMPDB0256EA
CCD area image sensor S11500-1007 Timing chart (line binning) KMPDC0353EB Parameter Symbol Min. Typ. Max. Unit P1V, P2V, TG*14 Pulse width Tpwv 6 8 - μs Rise and fall time Tprv, Tpfv 10 - - ns P1H, P2H*14 Pulse width Tpwh 500 2000 - ns Rise and fall time Tprh, Tpfh 10 - - ns Duty ratio - 40 50 60 % SG Pulse width Tpws 500 2000 - ns Rise and fall time Tprs, Tpfs 10 - - ns Duty ratio - 40 50 60 % RG Pulse width Tpwr 100 - - ns Rise and fall time Tprr, Tpfr 5 - - ns TG-P1H Overlap time Tovr 3 - - μs 14: Symmetrical clock pulses should be overlapped at 50% of maximum amplitude. Integration time (Shutter has to open) Vertical binning period (Shutter has to closed) P1V P2V, TG P1H P2H, SG Readout period (Shutter has to closed) 3..126 127 128 ← 122 + 6 (bevel) Tpwv Tovr Tpwh, Tpws Tpwr 123 1043 10444..1042 RG OS
CCD area image sensor S11500-1007 Dimensional outline (unit: mm) 3.0 Photosensitive surface 4.4 ± 0.44 2.35 ± 0.15 4.8 ± 0.49 3.75 ± 0.44 Window 28.6* 22.9 ± 0.30 22.4 ± 0.30 Active area 24.58 2.928 8.2* 44.0 ± 0.44 2.54 ± 0.13 1st pin index mark * Size of window that guarantees the transmittance in the “Spectral transmittance characteristics” graph 11 2 Pin connections Pin no. S ymbol Function Remark (standard operation)
1 RD Reset drain +12 V
2 OS Output transistor source R
L=22 kΩ
3 OD Output transistor drain +20 V
4 OG Output gate +3 V
5 SG Summing gate Same pulse as P2H
8 P2H CCD horizontal register clock-2
9 P1H CCD horizontal register clock-1
10 IG2H Test point (horizontal input gate-2) -8 V
11 IG1H Test point (horizontal input gate-1) -8 V
12 ISH Test point (horizontal input source) Connect to RD
13 TG *
15 Transfer gate Same pulse as P2V
14 P2V CCD vertical register clock-2
15 P1V CCD vertical register clock-1
20 SS Substrate (GND) GND
21 ISV Test point (vertical input source) Connect to RD
22 IG2V Test point (vertical input gate-2) -8 V
23 IG1V Test point (vertical input gate-1) -8 V
24 RG Reset gate
*15: Isolation gate between vertical register and horizontal register. In standard operation, TG should be applied the same pulse as P2V. KMPDA0264EB
Cat. No. KMPD1125E04 Aug. 2010 DN www.hamamatsu.com Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. Type numbers of products listed in the specification sheets or supplied as samples may have a suffix “(X)” which means tentative specifications or a suffix “(Z)” which means developmental specifications. ©2010 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 CCD area image sensor S11500-1007 Precaution for use (electrostatic countermeasures) Element cooling/heating temperature incline rate O When handling CCD sensors, always wear a wrist strap and also anti-static clothing, gloves, and shoes, etc. The wrist strap sh ould have a pro- tective resistor (about 1 M Ω) on the side closer to the body and be grounded properly. Using a wrist strap having no protective resistor is haz- ardous because you may receive an electrical shock if electric leakage occurs. O Avoid directly placing these sensors on a work bench that may carry an electrostatic charge. O Provide ground lines with the work bench and work fl oor to allow static electricity to discharge. O Ground the tools used to handle these sensors, such as tweezers and soldering irons. It is not always necessary to provide all the electrostatic measur es stated above. Implement these measures according to the am ount of damage that occurs. When cooling the CCD by an externally attached cooler, set the cooler operation so that the temperature gradient (rate of tempe rature change) for cooling or allowing the CCD to warm back is less than 5 K/minute. Multichannel detector head C7040
Features
Area scanning or line-binnng operation Readout frequency: 250 kHz Readout noise: 20 e- rms Input Symbol Speci fi cation Supply voltage VD1 VA1+ VA1- VA2 +5 Vdc, 200 mA +15 Vdc, +100 mA -15 Vdc, -100 mA +24 Vdc, 30 mA Master start φms HCMOS logic compatible Master clock φmc HCMOS logic compatible,