S11499

S11499 HAMAMATSU | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 3

Technical content

Large area, enhanced near IR sensitivity, using a MEMS technology S11499 series www.hamamatsu.com IR-enhanced General ratings Parameter S11499 S11499-01 Unit Package TO-5 TO-8 - Active area φ3.0 φ5.0 mm Electrical and optical characteristics (Ta=25 °C) Spectral response range λ - 360 to 1140 -- 360 to 1140 -n m Peak sensitivity wavelength λp - 1000 - - 1000 - nm Photo sensitivity S λ=1060 nm 0.54 0.6 - 0.54 0.6 - A/W Short circuit current Isc 100 lx 6.0 7.8 - 15 21 - μA Dark current ID VR=20 V - 0.05 5 - 0.1 10 nA Cut-off frequency fc VR=20 V, -3 dB -3 0- -1 5-M H z Terminal capacitance Ct VR=20 V, f=1 MHz -1 3- -3 3- p F Features Applications High sensitivity: 0.6 A/W (λ=1060 nm) Large active area: φ5.0 mm (S11499-01) High reliability package: TO-5/TO-8 metal package YAG laser monitor HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11499 series is a family of Si PIN photodiodes with drastically improved sensitiv- ity in the near infrared region at wavelengths longer than 900 nm. Compared to our conventional product, the S11499 series has much higher sensitivity to YAG laser light (1.06 μm). It also offers improved temperature characteristics of sensitivity at wave- lengths longer than 950 nm. Absolute maximum ratings Parameter Symbol Condition S11499 S11499-01 Unit Reverse voltage VR max. Ta=25 °C 30 V Operating temperature Topr -40 to +100 °C Storage temperature Tstg -55 to +125 °C

Si PIN photodiodes S11499 series 0.8 0.6 0.4 0.2 200 800 1000 600400 Wavelength (nm) 1200 Photo sensitivity (A/W) (Typ. Ta=25 °C) S11499 series Conventional type QE=100% -0.5 1.5 1.0 0.5 -1.0 600 900 1000 800700 Wavelength (nm) 1100 Temperature coefficient (%/°C) (Typ.) Conventional type S11499 series KPINB0368EA KPINB0369EA Spectral response Photo sensitivity temperature characteristic Reverse voltage (V) Dark current 0.01 0.1 1 10 100 1 pA 10 nA 1 nA 100 pA 10 pA (Typ. Ta=25 °C) S11499-01 S11499 Reverse voltage (V) Terminal capacitance 0.1 1 10 100 1 pF 1 nF 100 pF 10 pF (Typ. Ta=25 °C, f=1 MHz) S11499-01 S11499 KPINB0370EA KPINB0371EA Dark current vs. reverse voltage Terminal capacitance vs. reverse voltage

Cat. No. KPIN1082E01 Mar. 2010 DN www.hamamatsu.com Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. Type numbers of products listed in the specification sheets or supplied as samples may have a suffix “(X)” which means tentative specifications or a suffix “(Z)” which means developmental specifications. ©2010 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Si PIN photodiodes S11499 series Dimensional outlines (unit: mm) KPINA0024EB S11499 S11499-01 The glass window may extend a maximum of 0.2 mm above the upper surface of the cap. (20) 4.2 ± 0.2 (2.5) 0.45 Lead Window 5.9 ± 0.1 Photosensitive surface 5.08 ± 0.25 Case 0.4 max. 1.5 max. 9.1 ± 0.2 8.1 ± 0.1 (15) 5.0 ± 0.2 (2.7) 0.45 Lead 12.35 ± 0.1 13.9 ± 0.2 7.5 ± 0.2 Window 10.5 ± 0.1 Photosensitive surface Case 0.5 max. 1.0 max. Index mark 1.4 The glass window may extend a maximum of 0.3 mm above the upper surface of the cap. KPINA0027EC