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16-element Si photodiode arrays Back-illuminated photodiode arrays for X-ray non-destructive inspection S11212 series www.hamamatsu.com Selection guide CsI(TI) scintillator of the S11212-121 has deliquescence. Avoid storing or using the S11212-121 at high humidity. Precautions Spectral response range: 340 to 1100 nm (S11212-021) Element size: 1.175 (W) × 2.0 (H) mm/one element Element pitch: 1.575 mm ( × 16 pixels) Mounted on board size: 25.4 (W) × 20.0 (H) mm Long and narrow format by multiple arrays Supports dual energy imaging (When used in an upper and lower two-layer combination. See page 7.) Type no. Scintillator Application exampleType Afterglow Crosstalk S11212-021 None * - - General photometry S11212-121 CsI(Tl) Large Low X-ray non-destructive inspection of slow-moving objects (baggage inspection, etc.) S11212-321 GOS ceramic Small Low X-ray non-destructive inspection of fast-moving objects (baggage inspection, etc.) S11212-421 Phosphor sheet Small May occur. X-ray non-destructive inspection (at low X-ray energy) * This photodiode array as it is does not function as an X-ray detector. An appropriate scintillator or phosphor sheet should be added at user’s side. X-ray non-destructive inspection, etc. ApplicationsFeatures The S11212 series is a back-illuminated type 16-element photodiode array speci fi cally designed for non-destructive X-ray inspection. It has improved sensitivity uniformity and smaller photodiode element variations compared to our previous prod- uct (S5668 series). The back-illuminated photodiode array is also simple to handle and easily couples to scintillators without having to worry about wire damage because there are no bonding wires and photosensitive areas on the back side. The S11212 series can replace the S5668 series since their package size and pin connections are identical.

16-element Si photodiode arrays S11212 series X-ray Protective resin Active area Bonding wire Front-illuminated type (previous product) Scintillator Photodiode X-ray Photodiode Back-illuminated type (New) Bump electrode Scintillator Active area The S11212 series photodiode arrays have a back-illuminated type structure. This structure uses no fragile easily-broken bondin g wires since the photodiode array output terminals are directly connected by bump bonding to the electrodes on the board. This structure is robust since the board wiring is laid out within the board. The photodiode surface for coupling the scintillator has no bonding wires or photose nsitive areas, so there is less risk of damaging the photodiode array. The S11212 series is also resistant to effects from temperature cycle and so ensures high reliability. 100 105 110 1 2 3 4 5 6 7 8 9 1 01 11 21 31 41 51 6 Element no. Relative sensitivity (%) S11212 series Previous product (Typ. Ta=25 °C) The S11212 series supports dual energy imaging. To simultaneously detect high energy X-rays and low energy X-rays, the S11212 series is designed so that two photodiode arrays, each with a different scintillator, are combined in an upper and lower two-layer format. Arranging two or more S11212 series photodiode arrays in a row in close proximity also forms a line sensor that allows measurement of long objects. Our unique sensor design minimizes variations in sensitivity between photodiode elements as well as at the sensor ends. The S11212 se- ries offers signi fi cantly improved sensitivity uniformity compared to our previous product (S5668 series) and so provides optimal X-ray images. Sensor structure example Uniformity Two-layer combination Multi-array format Feature Back-illuminated type01 Cross-section diagram (comparison between front-illuminated type and back-illuminated type) Feature Multiple applications02 Feature Superb uniformity03 KMPDA0280EA KMPDB0352EA

16-element Si photodiode arrays S11212 series Absolute maximum ratings Electrical and optical characteristics (Ta=25 °C, per element, S11212-021 characteristics except X-ray sensitivity) Parameter Symbol S11212-021 S11212-121/-321/-421 Unit Reverse voltage V R Max. 10 10 V Operating temperature*1 Topr -20 to +60 -10 to +60 °C Storage temperature*1 Tstg -20 to +80 -20 to +70 °C *1: No condensation Parameter Symbol Condition Min. Typ. Max. Unit Spectral response range λ - 340 to 1100 - nm Peak sensitivity wavelength λp - 920 - nm Photo sensitivity S λ=540 nm 380 420 460 mA/Wλ=λp 550 610 670 X-ray sensitivity IscX *2 S11212-021 - - - nAS11212-121 - 6.0 - S11212-321 - 3.5 - S11212-421 - 3.0 - Dark current I D VR=10 mV - 5 30 pA Rise time tr VR=0 V, RL=1 kΩ 10 to 90%, λ=658 nm - 6.5 - μs Terminal capacitance Ct VR=0 V, f=10 kHz 30 40 50 pF *2: These are reference (X-ray tube voltage 120 kV, tube current 1.0 mA, aluminum fi lter t=6 mm, 830 mm). X-ray sensitivity depends on the X-ray equipment operating and setup conditions. Spectral response (characteristics without scintillator) 0.8 (Typ. Ta=25 °C) 0.6 0.4 0.7 0.5 0.3 0.2 0.1 200 * Spectral response characteristics of the S11212-121/ -321/-421 include the transmittance and reflectance of the adhesive resin used to bond a scintillator. 400 600 800 Wavelength (nm) 1000 1200 Photo sensitivity (A/W) QE=100 % S11212-021 S11212-121 S11212-321 S11212-421 Previous product KMPDB0350EA

Emission spectrum of scintillator and spectral response S11212-121 S11212-321 Relative emission output (%) Quantum efficiency (%) Wavelength (nm) (Typ.) 0 1000 1200 800600400200 100 100 QE withcut scintillator Emission spectrum of CsI(TI) scintillator Relative emission output (%) Quantum efficiency (%) Wavelength (nm) (Typ.) 0 1000 1200 800600400200 100 100 QE withcut scintillator Emission spectrum of ceramic scintillator KSPDB0282EB KSPDB0281EB Scintillator specifi cations Parameter Condition CsI(TI) Ceramic Unit Peak emission wavelength 560 512 nm X-ray absorption coeffi cient 100 keV 10 7 cm -1 Refractive index at peak emission wavelength 1.7 2.2 - Decay constant 1 3 μs Afterglow 100 ms after X-ray turn off 0.3 0.01 % Density 4.51 7.34 g/cm 3 Color Transparent Light yellow-green - Sensitivity non-uniformity ±10 ±5 % 16-element Si photodiode arrays S11212 series

16-element Si photodiode arrays S11212 series KMPDA0269EB Dimensional outlines (unit: mm, tolerance: ±0.1 mm unless otherwise noted) S11212-021 S11212-121 KMPDA0273EA 3.5 ± 0.5 1.0 ± 0.15 1.2 25.4 P1.575 × 15 = 23.625 1.575 P 2.54 × 8 = 20.32 2.54 2.0 4.0 15.24 ± 0.1 20.0 ± 0.2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 (18 ×) 0.45 Fe Ni Co pin Photodiode chip Glass epoxy board Active area 1.175 × 2.0 KC KC -0.3 +0.3 -0.2 3.5 ± 0.5 25.4 P1.575 × 15 = 23.625 1.575 P 2.54 × 8 = 20.32 2.54 2.0 3.1 [CsI(Tl)] 15.24 ± 0.1 20.0 ± 0.2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Photodiode chip Glass epoxy board CsI(Tl) 3.0t Active area 1.175 × 2.0 KC KC -0.3 +0.3 -0.2 1.0 ± 0.15 1.2 4.0 (18 ×) 0.45 Fe Ni Co pin

16-element Si photodiode arrays S11212 series KMPDA0274EA KMPDA0275EA S11212-321 S11212-421 3.5 ± 0.5 25.4 P1.575 × 15 = 23.625 1.575 P 2.54 × 8 = 20.32 2.54 2.0 3.1 (GOS ceramic) 15.24 ± 0.1 20.0 ± 0.2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Photodiode chip Glass epoxy board Active area 1.175 × 2.0 KC KC -0.3 +0.3 -0.2 1.0 ± 0.15 1.2 1.36 (18 ×) 0.45 Fe Ni Co pin GOS ceramic 1.3t 3.5 ± 0.5 25.4 P1.575 × 15 = 23.625 1.575 P 2.54 × 8 = 20.32 2.54 2.0 3.0 (Phosphor sheet) 15.24 ± 0.1 20.0 ± 0.2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Photodiode chip Glass epoxy board Active area 1.175 × 2.0 KC KC -0.3 +0.3 -0.2 1.0 ± 0.15 1.2 0.75 (18 ×) 0.45 Fe Ni Co pin Phosphor sheet 0.3t

Lineup of Si photodiode arrays for X-ray non-destructive inspection Scintillator Type no. Number of elements Element pitch (mm) Element size (mm) Board size (mm) Suitable X-ray energy Photo None* S11212-021* - * Csl(TI) High-energy GOS ceramic Phosphor sheet Low-energy * These photodiode arrays as they are do not function as X-ray detectors. Appropriate scintillators or phosphor sheets should be added at user’s side. The S11212/S11299 series are also compatible with other scintillators than those listed in the above table (custom made devices). Please consult our sales offi ce. Combination examples (for dual energy imaging) Dual energy imaging is a technique that acquires and superimposes two types of data in a single scan by using X-rays at two dif ferent energy levels (high energy and low energy). Two photodiode arrays with scintillators are used: one at the upper stage and the other at the lower stage. The upper stage is used for low energy detection, and the lower stage for high energy detection. Arranging two or more of these devices in a row also forms a line sensor for dual energy imaging. This combination uses the S11212 series in both upper and lower stages.

  • [Upper stage] S11212-421 + [Lower stage] S11212-121
  • [Upper stage] S11212-421 + [Lower stage] S11212-321 This combination uses the S11212 series in the upper stage and the S11299 series in the lower stage
  • [Upper stage] S11212-421 + [Lower stage] S11299-121
  • [Upper stage] S11212-421 + [Lower stage] S11299-321 Upper stage: low-energy photodiode array X-ray Lower stage: high-energy photodiode array X-rayUpper stage: low-energy photodiode array Lower stage: high-energy photodiode array 16-element Si photodiode arrays S11212 series Note: For details on the S11299 series, refer to the S11299 series datasheet.

16-element Si photodiode arrays S11212 series Cat. No. KMPD1127E03 May 2012 DN www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact us for the delivery specification sheet to check the latest information. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. Information described in this material is current as of May, 2012.