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Backscattered electron detector for scanning electron microscope (SEM)

Applications

Si photodiodes S11141-10, S11142-10 Electrical and optical characteristics (Ta=25 °C) Parameter Symbol Condition S11141-10 S11142-10 *2 Incident electron energy range - 1 - 30 1 - 30 keV Output current Isc Electron energy 1.5 keV Ip=100 pA*3 -3 0- -3 0- n A Dark current I D VR=10 mV - 0.5 3 - 0.2 1.2 nAVR=5 V - 56 0- 36 0 Terminal capacitance Ct VR=0 V, f=10 kHz - 1700 2500 - 800 1200 pFVR=5 V, f=10 kHz - 450 680 - 200 300 Cut-off frequency fc VR=0 V, RL=50 Ω MHzVR=5 V, RL=50 Ω Electron multiplying gain - Electron energy 1.5 keV Ip=100 pA*3 - 300 - - 300 - - *2: Per 1 element *3: Injection current (probe current) 10000 1000 (Typ. Ta=25 °C, Ip=100 pA) 100 01 0 2 0 Electron energy (keV) Gain KSPDB0344EA Gain vs. electron energy (Typ. Ta=25 °C, Ip=100 pA) Electron energy (keV) Detection efficiency (%) Gain = Isc/Ip Detection efficiency = (Gain/GTH) × 100 GTH = Electorn energy/3.62 100 0 1 02 03 0 KSPDB0347EA Detection efficiency vs. electron energy

Si photodiodes S11141-10, S11142-10 Electron multiplication principle Output current Electrons generate ions as they pass through silicon. This ionization process generates a large number of electron-hole pairs that then multiply the number of electrons. The electron multiplication can boost the output current by approximately 300 times at an input electron energy of 1.5 keV (refer to "Gain vs. electron energy"). Si photodiode Electron Detail Dead layer Generation of electron-hole pairs (electron multiplication) Silicon Vacuum KSPDC0089EA KSPDB0345EA Dark current vs. reverse voltage (typical example) Reverse voltage (V) Dark current 0.1 1 10 100 100 fA 1 μA 100 nA 10 nA 1 nA 100 pA 10 pA 1 pA (Ta=25 °C) S11141-10 S11142-10 KSPDB0346EA Terminal capacitance vs. reverse voltage Reverse voltage (V) Terminal capacitance 0.1 1 10 100 100 fF 1 μF 100 nF 10 nF 1 nF 100 pF 10 pF 1 pF (Typ. Ta=25 °C) S11141-10 S11142-10

Si photodiodes S11141-10, S11142-10 Dimensional outlines (unit: mm, tolerance unless otherwise noted: ±0.2) KSPDA0187EA S11141-10 ɸ2.3 5.5 ± 0.2 (2 ×) 1.5 10.0(0.5) 25.0 ɸ2.0 Chip hole ɸ7.0 Ceramic hole 11.0-0 Ceramic +0.2 Photosensitive area Light shield Al 1.0 max. 5.08 Wire protection resin

Si photodiodes S11141-10, S11142-10 S11142-10 14.0 35.0 ɸ7.0 Ceramic hole 14.0 0.5 ± 0.1 (0.25) 15.0-0 Ceramic +0.2 1.0 max. 1.22.54 P2.54 × 4 = 10.16 Wire protection resin 7.5 ± 0.2 ɸ2.3 (4 ×) /box36.925 0.15 0.15 1.8 0.3Light shield Al Photosensitive area Anode common ɸ2.0 Chip hole KSPDA0188EA

Si photodiodes S11141-10, S11142-10 Cat. No. KSPD1083E01 Nov. 2014 DN www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. Information described in this material is current as of November, 2014. Recommend soldering conditions

  • Soldering temperature: below 260 °C
  • Soldering time: within 5 seconds Related information ∙ Notice ∙ Unsealed products Technical information ∙ Si photodiode / Application circuit examples Precautions www.hamamatsu.com/sp/ssd/doc_en.html