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Electrical and optical characteristics (Ta=25 °C) Parameter Symbol Condition Min. Typ. Max. Unit Spectral response range λ - 380 to 1100 - nm Peak sensitivity wavelength λp - 960 - nm Photosensitivity S λ=650 nm 0.41 0.46 - A/Wλ=λp - 0.6 - Short circuit current Isc 100 lx, 2856 K - 1.2 - μA Dark current ID VR=2.5 V - 0.02 1 nA Cutoff frequency fc VR=2.5 V, λ=650 nm RL=50 Ω, -3 dB 5 10 - MHz Terminal capacitance Ct VR=2.5 V, f=1 MHz - 6 12 pF

Si PIN photodiode S10993-02CT Spectral response Photosensitivity temperature characteristics Linearity Dark current vs. reverse voltage Wavelength (nm) (Typ. Ta=25 °C) Photosensitivity (A/W) 600200 800400 0.1 0.2 0.3 0.4 0.5 0.6 0.7 1000 1200 QE=100% Wavelength (nm) Temperature coefficient (%/°C) 700 800 900 1000 -0.5 0.5 1.5 1100 (Typ.) Illuminance (lx) Short circuit current 101 102 103 104 105 100 μA 10 μA 100 nA 1 μA 10 mA 1 mA 106 (Typ. 2856 K) Reverse voltage (V) Dark current 0.01 0.1 1 10 100 fA 1 pA 10 pA 1 nA 100 pA 100 (Typ. Ta=25 °C) KPINB0390EA KPINB0398EA KPINB0397EA KPINB0391EA

Si PIN photodiode S10993-02CT Terminal capacitance vs. reverse voltage Directivity Reverse voltage (V) Terminal capacitance 0.1 1 10 100 fF 1 pF 10 pF 100 pF 100 (Typ. Ta=25 °C, f=1 MHz) 90° 80° 70° 60° 50° 40° 30° 90° 80° 70° 60° 50° 40° 30° 20° 10° 0° 10° 20° 020 40 60 80 10020 40 60 80 100 Relative sensitivity (%) (Typ. light: tungsten lamp) X Y X direction Y direction KPINB0392EA KPINB0399EA

Si PIN photodiode S10993-02CT Dimensional outline (unit: mm) Recommended land pattern (unit: mm) Photosensitive area 1.06 × 1.06 Photosensitive surface Photosensitive surface Index mark 3.1 1.2 0.61.75 (0.25)(0.25) 1.2 0.6 1.8 (0.2) Cathode Anode Tolerance unless otherwise noted: ± 0.1 Chip position accuracy with respect to package center X, Y≤±0.15 Electrode 0.8 ± 0.2 0.2 KPINA0118EA KPINC0022EA 2.4 0.65 1.75 0.65 3.05

Si PIN photodiode S10993-02CT Standard packing specifications KPINC0023EA 4.0 ± 0.1 1.75 ± 0.1 ϕ1.5 +0.1 3.45 ± 0.1 3.5 ± 0.05 8.0 ± 0.2 ϕ1.1 ± 0.1 1.4 ± 0.1 2.15 ± 0.1 Reel feed direction Reel (conforms to JEITA ET-7200) Embossed tape (unit: mm, material: PS, conductive) Packing quantity 3000 pcs/reel Packing type Reel and desiccant in moisture-proof packaging (vacuum-sealed) Dimensions Hub diameter Tape width Material Electrostatic characteristics 180 mm 60 mm 8 mm PS Conductive

Si PIN photodiode S10993-02CT Cat. No. KPIN1087E02 Sep. 2015 DN www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. Information described in this material is current as of September, 2015. Measured example of temperature profi le with our hot-air refl ow oven for product testing KPINB0403EB Time Temperature 300 °C 230 °C 190 °C 170 °C Preheat 60 to 120 s 260 °C max. Soldering 20 to 40 s ∙ This product supports lead-free soldering. After unpacking, store it in an environment at a temperature of 30 °C or less and a humidity of 60% or less, and perform soldering within 4 weeks. ∙ The effect that the product receives during refl ow soldering varies depending on the circuit board and re fl ow oven that are used. Before actual refl ow soldering, check for any problems by testing out the refl ow soldering methods in advance. Do not touch the silicone resin surface. As the silicone resin is soft, applying external force to it can cause damage to the r esin surface and cause short circuit or broken circuit due to wire deformation. Precautions Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Surface mount type products Technical information ∙ Si photodiode / Application circuit examples