S108T01

S108T01 SHARP | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 5

Technical content

S108T01/S108T02/S208T01/S208T02 n A bsolute M axim um R atings n O utline D im ensions (U nit : m m ) Low Profile Type Solid State R elays *1 R efer to Fig.2, Fig.3 *2 60H z sine w ave, start at Tj=25°C *3 Isolation voltage m easuring m ethod (1) D ielectric w ithstand voltage tester w ith zero cross circuit shall be used. (2) The applied voltage w aveform shall be sine w ave. (3) V oltage shall be applied betw een input and output. (Input and output term inals shall be shorted respectively.) (4) A C 60H z, 1m in, 40 to 60% R H . *4 For 10s Param eter Sym bol R ating U nit IF V R H z A /µs InputO utput 400 600 400 600 V V V m A A rm s A f 50dIT/dt IT V D R M Isurge V D SM 45 to 65 3.0 260 V iso O perating tem perature O perating frequency R epetitive peak O FF- state voltage C ritical rate of rise of O N -state current N on-repetitive peak O FF- state voltage Forw ard current R M S O N -state current Peak one cycle surge current R everse voltage Topr −30 to +125 −25 to +100 kV rm s Tsol Storage tem perature Isolation voltage Soldering tem perature Tstg (T a=25°C ) S108T01 S208T01 S108T01 S208T01 S108T02 S208T02 S108T02 S208T02 (3.8) (5.08) (10.16) (2.54) 1 2 3 4 S 1 0 8 T 0 1 8A 125V A C ∼ + − 7±0.2 1.8±0.2 4.5±0.311.5±0.2 3.8M AX. 0.2M AX. 6.2M IN . 1.6±0.2 3-1.2±0.2 6.4±0.2 C om m on to pin N o.2 (25.8) 4±0.223±0.2 Z.C . 0.4±0.1 10±0.2 Lot N o. (D IN Standard) Epoxy resin 4-0.8±0.2 1.8±0.3 0.1M IN . 30°±5 C om m on to pin N o.2 φ3.7±0.2 R 3.8±0.2 H S108T02/S208T02S108T01/S208T01 Internal connection diagram 1 2 3 4 1 2 3 4 Z.C . : Zero-cross circuit H : D o not allow external connection. h ( ) : Typical dim ensions O utput (Triac T1) O utput (Triac T2) Input (+) Input (−) O utput (Triac T1) O utput (Triac T2) Input (+) Input (−) M odel N o. S108T01 S108T02 S208T01 S208T02 8A 125VAC 8A 265VAC (1.8) 0.5±0.2 3±0.2 N otice In the absence of confirm ation by device specification sheets, SH AR P takes no responsibility for any defects that m ay occur in equipm ent using any SH AR P devices show n in catalogs, data books, etc. C ontact SH AR P in order to obtain the latest device specification sheets before using any SH AR P device. Internet Internet address for Electronic C om ponents G roup http://w w w .sharp.co.jp/ecg/ n Features 1. Program m able controllers 2. A ir conditioners 3. C opiers 4. A utom atic vending m achines n A pplications 1. Low profile type (height : 16m m ) 2. B uilt-in zero-cross circuit (S108T02/S208T02) 3. R M S O N -state current IT : M A X . 8A rm s 4. A pproved by TÜ V , N o. R 9750791 (S208TY1/S208TY2) Input-O utput : B asic Insulation n M odel line-ups For 100V lines For 200V lines N o zero-cross circuit B uilt-in zero-cross circuit S108T01 S108T02 S208T01 S208T02

S108T01/S108T02/S208T01/S208T02 n Electrical C haracteristics Param eter Sym bol M IN . TY P. M A X . U nit Forw ard voltage R everse current O N -state voltage C ritical rate of rise of O FF-state voltage C ritical rate of rise of O FF-state voltage at com m utaion Isolation resistance V F IR −IF=20m A 1.4 − − 1.2 4.5 Ω V T IFT dV /dt (dV /dt)C R iso ton R th(j-c) R th(j-a) V R =3V D C 500V , 40 to 60% R H IT=2A rm s, R esistance load, IF=20m A V D =12V , R L=30Ω V D =2/3V D R M Tj=125°C , V D =2/3V D R M , dIt/dt=−4A /m s 1.5 1×1010 1×10−4 V A A V /µs V /µs V rm s m A m s − − 10 m s °C /W M inim um trigger current Turn-on tim e Turn-off tim e Therm al resistance (B etw een junction and case) Therm al resistance (B etw een junction and am bience) InputO utputTransfer characteristics (T a=25°C ) C onditions − −V O X V D =6V , R L=30Ω IF=8m A 35 VZero cross voltage R epetitive peak O FF-state current −−ID R M V D =V D R M 1×10−4 H olding current −− −IH 50 m A S108T01/S208T01 S108T02/S208T02 S108T01 S208T01 S108T02 S208T02 S108T01 S108T02 S208T01 S208T02 S108T02/S208T02 toff V D =100V rm s, A C 50H z, IT=2A rm s, V D =200V rm s, A C 50H z, IT=2A rm s, R esistance load, IF=20m A V D =100V rm s, A C 50H z, IT=2A rm s, R esistance load, IF=20m A R esistance load, IF=20m A V D =200V rm s, A C 50H z, IT=2A rm s, R esistance load, IF=20m A Fig.1 Forw ard C urrent vs. A m bient Tem perature Forw ard current IF (m A ) A m bient tem perature Ta (°C ) −25 0 25 50 75 100 125

S108T01/S108T02/S208T01/S208T02 Fig.3 R M S O N -state C urrent vs. C ase Tem perature Fig.4 Forw ard C urrent vs. Forw ard Voltage R M S O N -state current IT (A rm s) C ase tem perature TC (°C ) −25 0 25 50 75 100 125 Fig.5 Surge C urrent vs. Pow er-on C ycle Surge current Isurge (A ) Pow er-on cycle (Tim es) 1 10 100 f=60H z Tj=25°C start 100 Fig.2 R M S O N -state C urrent vs. A m bient Tem perature R M S O N -state current IT (A rm s) A m bient tem perature Ta (°C ) −25 100755025 1250 (1)(2)(3) (4) (5) 4m m Al plate SSR (1) W ith infinite heat sink (2) W ith heat sink (200×200×2m m A l plate) (3) W ith heat sink (100×100×2m m A l plate) (4) W ith heat sink (50×50×2m m A l plate) (5) W ithout heat sink (N ote) W ith the A l heat sink set up vertically, tighten the device w ith a torque of 0.4N •m and apply therm al conductive silicone grease on the m ounting face of heat sink. Forced cooling shall not be carried out. (Please use an isolation sheet if necessary.) Forw ard current IF (m A ) Forw ard voltage V F (m A ) 0.5 0.1 −25°C 25°C 0°C Ta=75°C 50°C

S108T01/S108T02/S208T01/S208T02 R epetitive peak O FF-state current ID R M (A ) A m bient tem perature Ta (°C ) S108T01/S108T02 10−9 10−3 10−4 10−5 10−6 10−7 10−8 −25 0 25 50 75 100 V D =400V S108T01 S108T02 R epetitive peak O FF-state current ID R M (A ) A m bient tem perature Ta (°C ) S208T01/S208T02 10−9 10−3 10−4 10−5 10−6 10−7 10−8 −25 0 25 50 75 100 V D =600V S208T02 S208T01 Fig.8 M axim um O N -state Pow er D issipation vs. R M S O N -state C urrent (Typical Value) M axim um O N -state pow er dissipation (W ) R M S O N -state current IT (A ) 8642 75310 T a=25°C Fig.9 R epetitive Peak O FF-state C urrent vs. A m bient Tem perature Fig.10 R epetitive Peak O FF-state C urrent vs. A m bient Tem perature Fig.6 M inim um Trigger C urrent vs. A m bient Tem perature (Typical Value) Fig.7 M inim um Trigger C urrent vs. A m bient Tem perature (Typical Value) M inim um trigger current IFT (m A ) A m bient tem perature Ta (°C ) S108T01/S208T01 −25 0 25 50 75 100 V D =12V M inim um trigger current IFT (m A ) A m bient tem perature Ta (°C ) S108T02/S208T02 −25 0 25 50 75 100 V D =6V

l The circuit application examples in this publication are provided to explain representative applications of SHARP devices and are not intended to guarantee any circuit design or license any intellectual property rights. SHARP takes no responsibility for any problems related to any intellectual property right of a third party resulting from the use of SHARP's devices. l Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. SHARP reserves the right to make changes in the specifications, characteristics, data, materials, structure, and other contents described herein at any time without notice in order to improve design or reliability. Manufacturing locations are also subject to change without notice. l Observe the following points when using any devices in this publication. SHARP takes no responsibility for damage caused by improper use of the devices which does not meet the conditions and absolute maximum ratings to be used specified in the relevant specification sheet nor meet the following conditions: (i) The devices in this publication are designed for use in general electronic equipment designs such as: --- Personal computers --- Office automation equipment --- Telecommunication equipment [terminal] --- Test and measurement equipment --- Industrial control --- Audio visual equipment --- Consumer electronics (ii)Measures such as fail-safe function and redundant design should be taken to ensure reliability and safety when SHARP devices are used for or in connection with equipment that requires higher reliability such as: --- Transportation control and safety equipment (i.e., aircraft, trains, automobiles, etc.) --- Traffic signals --- Gas leakage sensor breakers --- Alarm equipment --- Various safety devices, etc. (iii)SHARP devices shall not be used for or in connection with equipment that requires an extremely high level of reliability and safety such as: --- Space applications --- Telecommunication equipment [trunk lines] --- Nuclear power control equipment --- Medical and other life support equipment (e.g., scuba). l Contact a SHARP representative in advance when intending to use SHARP devices for any "specific" applications other than those recommended by SHARP or when it is unclear which category mentioned above controls the intended use. l If the SHARP devices listed in this publication fall within the scope of strategic products described in the Foreign Exchange and Foreign Trade Control Law of Japan, it is necessary to obtain approval to export such SHARP devices. l This publication is the proprietary product of SHARP and is copyrighted, with all rights reserved. Under the copyright laws, no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose, in whole or in part, without the express written permission of SHARP. Express written permission is also required before any use of this publication may be made by a third party. l Contact and consult with a SHARP representative if there are any questions about the contents of this publication.