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COB (chip on board) type, small package www.hamamatsu.com Photo IC diode 1 mm The S10604-200CT photo IC has spectral response close to human eye sensitivity. Two photosensitive areas are made on a sin- gle chip. Almost only the visible range can be measured by fi nding the difference between the two output signals in the internal current amplifi er circuit. Effects of infrared remote control light on sensitivity are reduced when compared to previous types. Absolute maximum ratings (Ta=25 °C) Parameter Symbol Condition Value Unit Reverse voltage VR -0.5 to +12 V Photocurrent IL 5m A Forward current IF 5m A Power dissipation*1 P 150 mW Operating temperature Topr No dew condensation *2 -30 to +80 °C Storage temperature Tstg No dew condensation* 2 -40 to +85 °C Refl ow soldering condition*3 Tsol Peak temperature 260 °C, two times (See page 5) - *1: Power dissipation decreases at a rate of 2 mW/°C above Ta=25 °C. *2: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. *3: JEDEC level 3 Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta=25 °C) Parameter Symbol Condition Min. Typ. Max. Unit Spectral response range λ - 300 to 820 - nm Peak sensitivity wavelength λp - 560 - nm Dark current ID VR=5 V - 1 50 nA Photocurrent IL VR=5 V, 2856 K, 100 lx 0.21 - 0.39 mA Rise time*4 tr 10 to 90%, VR=7.5 V RL=10 kΩ, λ=560 nm - 6.0 - ms Fall time*4 tf 90 to 10%, VR=7.5 V RL=10 kΩ, λ=560 nm - 2.5 - ms *4: Rise/fall time measurement method (P.2) Liquid crystal monitor backlight dimmer for cellular phone Energy-saving sensor for large-screen TVs, etc. Light dimmers for liquid crystal panels Various types of light level measurement Spectral response close to human eye sensitivity Lower output-current fl uctuations compared with phototransistors Low output fl uctuations for light sources producing the same illuminance at different color temperatures Small package: 2.0 × 1.25 × 0.8t mm About 1/5 the cubic volume of previous type (S9067-201CT) Excellent linearity Suitable for lead-free refl ow (RoHS compliance) Features Applications

Photo IC diode S10604-200CT Spectral response 0.1 0.2 0.3 0.4 0.5 0.7 0.9 0.6 0.8 1.0 200 400 600 800 Wavelength (nm) 1000 1200 Relative sensitivity (Typ. Ta=25 °C, VR=5 V) S10604-200CT Human eye sensitivity KPICB0112ED KPICC0041EA Pulsed light from LED (λ=560 nm) V O Load resistance R L 7.5 V 90 % 2.5 V 10 % VO tr tf0.1 μF Photocurrent vs. illuminance Illuminance (lx) (Typ. Ta=25 °C, VR=5 V, 2856 K) Photocurrent 0.1 1 10 100 nA 1 μA 10 μA 10 mA 1 mA 100 μA 1000100 10000 KPICB0083EC

Photo IC diode S10604-200CT Rise/fall times vs. load resistance Directivity Photocurrent vs. ambient temperature 1000 100 0.1 100 1 k 10 k Load resistance (Ω) 100 k 1 M Rise/fall times (ms) (Typ. Ta=25 °C, VR=7.5 V, λ=560 nm, Vo=2.5 V) tr tf Relative sensitivity (%) (Typ. Ta=25 °C, 2856 K) 90° 80° 70° 60° 50° 40° 30° 90° 80° 70° 60° 50° 40° 30° 20° 10° 0° 10° 20° 020 40 60 80 10020 40 60 80 100 0.2 0.4 0.6 0.8 1.2 1.6 1.0 1.4 1.8 -25 0 25 50 75 100 * At Ta=25 °C normalized to 1 Ambient temperature (°C) Photocurrent (relative value)* (Typ. Ta=25 °C, VR=5 V, 2856 K, Io≈0.6 mA) KPICB0115EA KPICB0117EA KPICB0116EA

Photo IC diode S10604-200CT Operating circuit example KPICC0132EA KPICA0072EB Photodiode for signal offset Cathode Anode CL RL Vout Reverse bias power supply The drawing surrounded by the dotted line shows a schematic diagram of the photo IC. Current amp (approx. 30000 times) Photodiode for signal detection Internal protection resistance (approx. 150 Ω) The photo IC diode must be reverse-biased so that a positive potential is applied to the cathode. To eliminate high-frequency components, we recommend placing a load capacitance CL in parallel with load resistance RL as a low- pass fi lter. 2πCLRL 1Cutoff frequency fc ≈ Dimensional outline (unit: mm) Index mark Photosensitive area 0.32 × 0.46 1.4 (0.25) 2.0 0.4 1.0 1.5 1.0 1.0 0.4 1.25 Recommended land pattern Cathode Anode Tolerance unless otherwise noted: ±0.2 Values in parentheses indicate reference value. Electrode Standard packing: reel (3000 pcs/reel) 0.4 0.8

Photo IC diode S10604-200CT Packing specifications Recommended temperature profile of reflow soldering KPICA0074EA KPICA0073EA KPICB0119EA Tape (3000 pcs./reel) Reel Cathode Anode 0.23 1.753.5 4ϕ1.5 2.2 ɸ13 ɸ60 ɸ178 100 150 200 250 300 0 100 200 30050 150 250 350 400 Time (s) Temperature (°C) Peak temperature 260 °C max. Preheating time (150 to 200 °C) 160 s Heating time (217 °C min.) 100 s

  • After unpacking, store this device in an environment at a temperature of 5 to 25 °C and a humidity below 60%, and perform re fl ow soldering on this device within 168 hours (7 days).
  • Thermal stress applied to the device during re fl ow soldering differs depending on the PC boards and re fl ow oven being used. When setting the refl ow conditions, make sure that the refl ow soldering process does not degrade device reliability.

Photo IC diode S10604-200CT Operating voltage, output characteristics RL (external resistor) IL Photo IC diode Rin=150 Ω ± 20% (internal protection resistor) Vcc KPICC0128EC [Figure 1] Measurement circuit example Figure 2 shows the photocurrent vs. reverse voltage characteristics (light source: LED) for the measurement circuit example in Figure 1. The output curves are shown for illuminance levels. The output curves rise from a reverse voltage (rising voltage) of approximately 0.7 V (±10%). To protect the photo IC diode from excessive current, a 150 Ω (±20%) protection resistor is inserted in the circuit. Reverse voltage V R when the photo IC diode is saturated is the sum of Vbe(ON) and the voltage drop across the protection resistor Rin [Equation (1)]. The photodiode’s reverse voltage (VR) is expressed by Equation (2) according to the voltage drop across the external resistor. This is indicated as load lines in Figure 2. In Figure 2, the intersections between the output curves and the load lines are the saturation points. From these points, the m aximum detectable light level can be specifi ed. Since the maximum light level is determined by the supply voltage (Vcc) and load resistance (RL), adjust them according to the operating conditions. Note: The temperature characteristics of Vbe(ON) is approximately -2 mV/°C, and that of the protection resistor is approximatel y 0.1%/°C.

Cat. No. KPIC1090E05 Aug. 2015 DN www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. Information described in this material is current as of August, 2015. Photo IC diode S10604-200CT Related information ∙ Disclaimer ∙ Surface mount type products / Precautions Precautions www.hamamatsu.com/sp/ssd/doc_en.html KPICB0107EC [Figure 2] Photocurrent vs. reverse voltage 300 lx 600 lx 880 lx 1150 lx 1380 lx 1600 lx Reverse voltage (V) 012345 (Typ. Ta=25 °C) Photocurrent (mA) Saturation region approx. 650 lx Rising voltage Vbe(ON)≈0.7 V Load line Vcc=3 V, RL=1 kΩ Load line Vcc=5 V, RL=1 kΩ Saturation region approx. 1260 lx Internal protective resistance Rin: approx. 150 Ω