S10453

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Technical content

10 MHz readout, voltage output type

www.hamamatsu.com The S10453 series is a voltage output type CMOS linear image sensor that operates at a video data rate of 10 MHz. This CMOS linear image sensor has a pixel size of 25 × 500 μm and is available in two types of 512 pixels (S10453-512Q) or 1024 pixels (S10453-1024Q). Image reading Position detection Features Applications Video data rate: 10 MHz max. Voltage output type

5 V single supply operation

Built-in timing generator allows operation with only start and clock pulse inputs. Simultaneous charge integration Shutter function Pixel size: 25 (H) × 500 (V) μm Spectral response range: 200 to 1000 nm Absolute maximum ratings Parameter Symbol Condition Value Unit Supply voltage Vdd Ta=25 °C -0.3 to +6 V Clock pulse voltage V(CLK) Ta=25 °C -0.3 to +6 V Start pulse voltage V(ST) Ta=25 °C -0.3 to +6 V Operating temperature*1 Topr -5 to +65 °C Storage temperature*1 Tstg -10 to +85 °C Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. *1: No condensation Structure Parameter S10453-512Q S10453-1024Q Unit Number of pixels 512 1024 - Pixel pitch 25 μ m Pixel height 500 μm Photosensitive area length 12.8 25.6 mm Package Ceramic - Window material Quartz -

CMOS linear image sensors S10453 series Recommended terminal voltage Parameter Symbol Min. Typ. Max. Unit Supply voltage Vdd 4.75 5 5.25 V Clock pulse voltage High V(CLK) Vdd - 0.25 Vdd Vdd + 0.25 V Low 0 - 0.4 V Start pulse voltage High V(ST) Vdd - 0.25 Vdd Vdd + 0.25 V Low 0 - 0.4 V

Electrical characteristics

Parameter Symbol Min. Typ. Max. Unit Clock pulse frequency f(CLK) 2 M - 10 M Hz Video data rate VR - f(CLK) - MHz Consumption current*2 S10453-512Q I 25 34 43 mAS10453-1024Q 42 52 62 Conversion effi ciency CE 1.4 1.6 1.8 μV/e- *2: Ta=25 °C, Vdd=5 V, f(CLK)=10 MHz Electrical and optical characteristics [Ta=25 °C, Vdd=5 V, V(CLK)=V(ST)=5 V, f(CLK)=10 MHz] Parameter Symbol Min. Typ. Max. Unit Spectral response range λ 200 to 1000 nm Peak sensitivity wavelength λp 540 600 660 nm Dark output voltage*3 Vd - 3 30 mV Saturation output voltage*4 Vsat 2.8 3.2 - V Noise Nr - 1.1 2.0 mV rms Offset output voltage Vo 0.5 0.7 0.9 V Photoresponse nonuniformity*5 *6 PRNU - - ±10 % *3: Integration time Ts=10 ms *4: Difference from Vo *5: Photoresponse nonuniformity (PRNU) is the output nonuniformity that occurs when the entire photosensitive area is uniformly illuminated by light which is 50% of the saturation exposure level. PRNU is measured using pixels excluding pixels each at both ends, and is defi ned as follows: PRNU = ΔX/X × 100 [%] X: average output of all pixels, ΔX: difference between X and maximum output or minimum output *6: Excluding the start pixel and last pixel Block diagram KMPDB0273EA KMPDC0256EC Spectral response (typical example) Wavelength (nm) Relative sensitivity (%) (Ta=25 °C) 200 100 400 600 800 1000 1200 ST CLK GND Timing generator Bias generator 23 4 11 EOS Video Photodiode array

12 N - 1 N

CMOS linear image sensors S10453 series Timing chart CLK Video tvd1 tvd2 1234 13 14 15 CLK Video EOS ST Integration time 14 clocks 1 n tlp(ST)thp(ST) tpi(ST) CLK ST tf(CLK) tf(ST)tr(ST) tr(CLK) tlp(ST)thp(ST) tpi(ST) 1/f(CLK) KMPDC0255ED Parameter Symbol Min. Typ. Max. Unit Start pulse interval tpi(ST) 23/f(CLK) - 1100 m s Start pulse high period thp(ST) 8/f(CLK) - 1000 m s Start pulse low period tlp(ST) 15/f(CLK) - 100 m s Start pulse rise and fall times tr(ST), tf(ST) 0 20 30 ns Clock pulse duty ratio - 45 50 55 % Clock pulse rise and fall times tr(CLK), tf(CLK) 0 20 30 ns Video delay time 1*7 tvd1 5 13 18 ns Video delay time 2*7 tvd2 5 20 28 ns *7: Ta=25 °C, f(CLK)=10 MHz Note: The internal timing gener ator starts operation at the rising edge of CLK immediately after ST goes low. The rising edge of this CLK is regarded as “1”. The integration time equals the high period of ST. When the ST pulse is set to low while the shift register is operating, the operation of the shift register is reset and the nex t shift register operation will start. The integration time can be changed by changing the ratio of the high and low periods of ST.

CMOS linear image sensors S10453 series Operation example thp(ST)=51.5 µstlp(ST)=1.5 µs ST tpi(ST)=53 µs KMPDC0393EA When the clock pulse frequency is maximized (video data rate is also maximized), the time of one scan is minimized, and the int egra- tion time is maximized (for outputting signals from all 512 channels) Clock pulse frequency = Video data rate = 10 MHz Start pulse cycle = 530/f(CLK) = 530/10 MHz = 53 μs Start pulse high period = Start pulse cycle - Minimum start pulse low period = 530/f(CLK) - 15/f(CLK) = 530/10 MHz - 15/10 MHz = 51.5 μs Integration time is equal to the start pulse high period, so it will be 51.5 μs. S10453-512Q S10453-1024Q thp(ST)=102.7 µstlp(ST)=1.5 µs ST tpi(ST)=104.2 µs KMPDC0394EA When the clock pulse frequency is maximized (video data rate is also maximized), the time of one scan is minimized, and the int egra- tion time is maximized (for outputting signals from all 1024 channels) Clock pulse frequency = Video data rate = 10 MHz Start pulse cycle = 1042/f(CLK) = 1042/10 MHz = 104.2 μs Start pulse high period = Start pulse cycle - Minimum start pulse low period = 1042/f(CLK) - 15/f(CLK) = 1042/10 MHz - 15/10 MHz = 102.7 μs Integration time is equal to the start pulse high period, so it will be 102.7 μs.

CMOS linear image sensors S10453 series Dimensional outline (unit: mm) 31.75 ± 0.30 6.85 ± 0.3(5.95) 1222 Photosensitive area 12.8 × 0.5 4.7 ± 0.2*1 10.05 ± 0.25 0.51 ± 0.05 2.54 ± 0.13 25.4 ± 0.13 3.0 ± 0.35.0 ± 0.5 *1: Distance from pin center to phtosensitive area center *2: Distance from package bottom to photosensitive surface *3: Distance from upper surface of window to photosensitive surface *4: Window thickness 10.16 ± 0.25 0.5 ± 0.05*4 1.35 ± 0.2*3 1.4 ± 0.2*2 0.25 Index mark Direction of scan Photosensitive surface 1 ch KMPDA0311EA S10453-512Q KMPDA0312EA 4.7 ± 0.2*1 40.64 ± 0.41 1222 10.05 ± 0.25 0.51 ± 0.05 2.54 ± 0.13 25.4 ± 0.13 3.0 ± 0.35.0 ± 0.5 *1: Distance from pin center to phtosensitive area center *2: Distance from package bottom to photosensitive surface *3: Distance from upper surface of window to photosensitive surface *4: Window thickness 10.16 ± 0.25 0.5 ± 0.05*4 1.35 ± 0.2*3 1.4 ± 0.2*2 0.25 Photosensitive area 25.6 × 0.5 1 chIndex mark Direction of scan Photosensitive surface S10453-1024Q

CMOS linear image sensors S10453 series Application circuit example Pin no. Symbol I/O Function

1 NC No connection

2 ST I Start pulse

3 CLK I Clock pulse

4 GND Ground

5 Vdd I Supply voltage

6 NC No connection

7 NC No connection

8 Vdd I Supply voltage

9 Video O Video output

10 EOS O End of scan

11 GND Ground

12 NC No connection

13 NC No connection

14 NC No connection

15 NC No connection

16 NC No connection

17 MC No connection

18 NC No connection

19 NC No connection

20 NC No connection

21 Vdd I Supply voltage

22 NC No connection

+5 V +5 V +5 V +6 V -6 V 0.1 µF 0.1 µF 22 pF 0.1 µF 0.1 µF 22 µF/25 V S10453 series 22 µF /25 V 0.1 µF 22 µF /25 V 22 µF /25 V EOS 74HC541 22 µF /25 V ST CLK 82 Ω 82 Ω 74HC541 100 Ω 51 Ω LT1818 NC NC GND NC Vdd NC NC NC NC NC Vdd NC Video NC EOS NC GND NC ST Vdd CLK NC KMPDC0414EA

Cat. No. KMPD1101E08 Mar. 2014 DN CMOS linear image sensors S10453 series www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. Information described in this material is current as of March, 2014. Precautions (1) Electrostatic countermeasures This device has a built-in protection circuit against static electrical charges. However, to prevent destroying the device with electro- static charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. Also protect this device from surge voltages which might be caused by peripheral equipment. (2) Incident window If dust or dirt gets on the light incident window, it will show up as black blemishes on the image. When cleaning, avoid rubbing the window surface with dry cloth or dry cotton swab, since doing so may generate static electricity. Use soft cloth, paper or a co tton swab moistened with alcohol to wipe dust and dirt off the window surface. Then blow compressed air onto the window surface so that no spot or stain remains. (3) Soldering To prevent damaging the device during soldering, take precautions to prevent excessive soldering temperatures and times. Solder - ing should be performed within 5 seconds at a soldering temperature below 260 °C. (4) Operating and storage environments Handle the device within the temperature range speci fi ed in the absolute maximum ratings. Operating or storing the device at an excessively high temperature and humidity may cause variations in performance characteristics and must be avoided. (5) UV exposure The device is designed to suppress performance deterioration due to UV exposure. Even so, avoid unnecessary UV exposure to the device. Also, be careful not to allow UV light to strike the cemented portion between the ceramic base and the glass. Related information ∙ Notice ∙ Image sensors/Precautions Precautions www.hamamatsu.com/sp/ssd/doc_en.html