S10317 HAMAMATSU | Alldatasheet

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Technical content

Features

/K6C Low voltage operation (3.3 V) /K6C High sensitivity Current amplifier gain: 20 times (S10317) 6 times (S10317-01) /K6C Digital output /K6C Small package /K6C Suitable for lead-free solder reflow /K6C Active area: 2.84 × 0.5 mm

Applications

/K6C Print start timing detection for laser printers, digital copiers, fax machines, etc. I Absolute maximum ratings (Ta=25 °C, unless otherwise noted) Parameter Symbol Value Unit Supply voltage Vcc -0.5 to +7 V Power dissipation *1 P 300 mW Output voltage *2 Vo -0.5 to +7 V Output current Io 5 mA Ro terminal current I RO 3m A Operating temperature Topr -25 to +80 °C Storage temperature Tstg -40 to +85 °C *1: Power dissipation decreases at a rate of 4 mW/°C above Ta=25 °C. *2: Vcc=+0.5 V or less I Electrical and optical characteristics (Ta=25 °C, λ=780 nm, Vcc=3.3 V, Ro=5.1 kΩ , unless otherwise noted) Parameter Symbol Condition Min. Typ. Max. Unit Current consumption Icc No input - 0.7 1.5 mA High level output voltage VOH IOH=4 mA 2.9 - - V Low level output voltage V OL IOL=4 mA *3 -- 0 . 3 V S10317 14 19 24Threshold input power S10317-01 PTH 49.5 62 74.5 µW S10317 - 130 250HˠL propagation delay time S10317-01 tPHL - 100 200 S10317 - 200 300LˠH propagation delay time S10317-01 tPLH - 150 250 ns Rise time tr - 4 7 ns Fall time tf PI=57 µW (S10317) PI=186 µW (S10317-01) Duty ratio 1:1 CL=15 pF *4 - 4 7 ns Maximum input power PI Max. - - PTH × 8 µW *3: Input power [PI]=57 µW (S10317), PI=186 µW (S10317-01) 50 %INPUT LIGHT INTENSITY OUTPUT 100 % 0 % 90 % 1.5 V 10 % tPHL tf tr tPLH KPICC0112EA

Photo IC for laser beam synchronous detection S10317 series HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K. Cat. No. KPIC1067E02 Aug. 2007 DN2 0.66 3.2 ± 0.2 (INCLUDING BURR) 2.4 MIRROR AREA RANGE 0.15 2.8 2.9 3.0 *0.45 ± 0.3 3.0 * 3.4 MIRROR AREA RANGE 3.8 3.9 4.0 * 4.0 * 4.2 ± 0.2 5.0 ± 0.3 0.45 ± 0.3 0.35 0.75 1.3 0.80.80.8 0.1 ± 0.1 0.8 (9 ×) 0.3 (9 ×) 0.4 0.5 PHOTOSENSITIVE SURFACE Tolerance unless otherwise noted: ±0.1, ±2˚ Shaded area indicates burr. Chip position accuracy with respect to the package dimensions marked * Vcc NC OUT GND Ro GND GND GND GND PHOTOSENSITIVE SURFACE 2.84 0.15 CENTER OF ACTIVE AREA I Dimensional outline (unit: mm) KPICC0127EA I Block diagram Vcc 0.1 µF 3.3 V CURRENT AMPLIFIER EXTERNAL GAIN RESISTANCE Ro Vo RoPD Vref GND I Function S10317 series photo IC integrates a photodiode chip and an IC chip into the same package. The photodiode chip is internally connected to the IC chip as shown in the block diagram. S10317 series should be used with terminal Ro connected to an external gain resistance Ro. A photocurrent is generated when a laser beam enters the photodiode. This photocurrent is fed to the input terminal of the IC and, after being amplified by the current amplifier, flows to the external gain resistance. At this time, voltages V RO at terminal Ro is given by the following expression. V A: Current amplifier gain (S10317: 20 times, S10317-01: 6 times) S: Photodiode sensitivity [A/W] (approx. 0.44 A/W at 780 nm) P I: Input power [W] Ro: External gain resistance [Ω ]; usable range 2 kΩ to 10 kΩ VRO is input to the internal comparator and compared with the internal reference voltage Vref (approx. 0.8 V) so the output Vo is “High” when VRO < Vref or “Low” when VRO > Vref. In equatin (1), set the Ro value so that VRO is 2 to 3 V. (Monitoring VRO shows that it is limited to about 2 V (with respect to GND) by the voltage limiting circuit. Keep this in mind when monitoring.) KPICA0070EB