S102S11 SHARP | Alldatasheet

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n Outline Dimensions (Unit : mm) n Applications n Features 1. Automatic vending machines 2. Amusement equipment 3. Programmable controllers For 100V lines For 200V lines Built-in snubber circuit S102S11 S202S11 Built-in snubber circuit and circuit S202S12 (36.0) Internal connection diagram ( ): Typical dimensions A B 12 3 4 12 3 412 3 4

3 Input (+ )3 Input (+ )

A (Model No.) B S102S11 8A135VACS102S12 S202S11 8A250VACS202S12 data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, S102S11/S102S12/S202S11/S202S12 2. Built-in snubber circuit 3. Built-in zero-cross circuit 4. High repetitive peak OFF-state voltage 5. RMS ON-state current IT : MAX. 8Arms at TC <= 88˚C (With heat sink) 6. Isolation voltage between input and output (V iso zero-cross S102S12 Zero-cross circuit

1 Output (Triac T2)

2 Output (Triac T1)

Circuit and Mouning Capability for External Heat Sink

4 Input (- )

(S102S12/S202S12) S102S11/S102S12 VDRM : 400V * The metal parts marked * are h Do not allow external connection. n Model line-ups Approved by CSA, No. LR63705 S202S11/S202S12 V DRM : 600V 1. High radiation resin mold package common to terminal 1 . 7. Recognized by UL, file No. E94758 : 4 000Vrms ) 18.5± 0.2 16.4± 0.3 φ 3.2± 0.2 3.2± 0.2 5.5± 0.2 5.0± 0.319.6± 0.2 h 0.2MAX. 4 - 1.1± 0.2 4 - 1.25± 0.3 0.6± 0.1 4 - 0.8± 0.2 4.2MAX. 11.2MIN. S102S11 /S202S11 S102S12 /S202S12

S102S11/S102S12/S202S11/S202S12 Input Output Transfer charac- teristics Turn-on time Turn-off time Thermal resistance (Between junction and case) Thermal resistance (Between junction and ambience) TYP. MAX. Unit 1.2 1.4 V -1 0 -4 A - 1.5 -5 0 -1 0 -- V / µ s -- V / µ s -3 5V 8m A 8m A - Ω 1m s 9.3 ms 9.3 ms - ˚C/W - ˚C/W n Absolute Maximum Ratings (Ta = 25˚C) ton toff R th(j- c) R th(j- a) Parameter Symbol Rating Unit Input Forward current I F 50 mA Reverse voltage V R 6V Output RMS ON-state current I T *48 *1Peak one cycle surge current I surge 80 A Repetitive peak-OFF V DRM

400 V600

Non-repetitive peak-OFF V DSM Critical rate of rise of ON-state current dI T /dt 50 A/ µ s *2 Isolation voltage V iso Operating temperature T opr - 20 to + 80 ˚C Storage temperature T stg - 30 to + 100 ˚C *3Soldering temperature T sol 260 ˚C Load supply voltage V out

135 V rms

*5 S102S11/S102S12 :V D = 400V S202S11/S202S12 :V D = 600V (Ta = 25˚C)n Electro-optical Characteristics Symbol Forward voltage V F Reverse current ON-state voltage V T Minimum Operating current S102S11/S102S12 Iop S202S11/S202S12 Open circuit leak current S102S11/S102S12 Ileak S202S11/S202S12 voltage Critical rate of rise of OFF-state Zero-cross voltage S102S12/S202S12 Minimum trigger current S102S11/S202S11 S102S12/S202S12 Parameter Isolation resistance Conditions MIN. IF = 20mA - V R =3 V - IT = 2Arms - V out = 120Vrms -V out = 240Vrms V out = 120Vrms - V out = 240Vrms - V D = 2/3VDRM 30 Tj = 125 ˚C dIt/dt = - 4.0A/ms, IF = 8mA - IR DC500V, RH = 40 to 60 % 10 10 4.0 V D = 12V, RL =3 0Ω V D = 6V, RL =3 0Ω *1 50Hz sine wave, start at Tj= 25˚C *2 60Hz AC for 1 minute, RH= 40 to 60% , Apply voltages between input and output, by the dielectric withstand voltage tester with zero-cross circuit. (Input and output shall be shorted respectively). *3 For 10 seconds *4 Tc <= 88˚C Commutating OFF-state voltage Critical rate of rise of AC60Hz AC60Hz A rms V rms dV/dt (dV/dt)C V OX IFT R ISO V rms mA rms mA rms (Note) When the isolation voltage is necessary at using external hear sink, please use the insulation sheet. 4 000

S102S11/S102S12/S202S11/S202S12 Case temperature T (˚C) - 20 60 70 80 90 100 110 120 130 Ambient temperature T a (˚C) - 20 0 20 40 60 80 100 604 21 0 81 2 Maximum ON-state power dissipation (W ) Surge current Isurge (A ) 21 0 52 0 100 100 Forward voltage V F (V ) Forward current IF (mA ) 0 1.0 2.0 100 25˚C 0˚C - 25˚C T a = 100˚C 75˚C 50˚C Fig. 1 RMS ON-state Current vs. Case Temperature Fig. 2 RMS ON-state Current vs. Ambient Temperature Fig. 3 Forward Current vs. Forward Ambient temperature Ta (˚C) Minimum trigger current IFT (mA ) - 20 0 20 40 60 80 100 Voltage (Typical Value) f = 50Hz Sine wave T j = 25˚C Start vs. RMS ON-state Current (Typical Value) V D = 12V R L =3 0Ω Fig. 6 Minimum Trigger Current vs. Ambient Temperature (Typical Value) Fig. 5 Maximum ON-state Power Dissipation RMS ON-state current IT (Arms ) RMS ON-state current IT (Arms ) Power-on cycle (Times) RMS ON-state current IT (Arms ) Fig. 4 Surge Current vs. Power-on Cycle C (S102S11/S202S11 ) T a = 25˚C

S102S11/S102S12/S202S11/S202S12 Ambient temperature Ta (˚C) Minimum trigger current IFT (mA ) - 20 0 20 40 60 80 100 T a= 25˚CV D =6 V R L =3 0Ω Open circuit leak current Ileak Supply voltage (Vrms ) 0 200 320 T a= 25˚C Open circuit leak current Ileak Supply voltage (Vrms ) Fig. 8 Open Circuit Leak Current vs. Supply Voltage (Typical Value) Fig. 7 Minimum Trigger Current vs. Ambient Temperature (Typical Value) (S102S12 / S202S12) Fig. 9 Open Circuit Leak Current vs. Supply Voltage (Typical Value) 100 160 (S102S11/S102S12 ) (S202S11/S202S12 ) l Please refer to the chapter “ Precautions for Use.” (mA rms ) (mA rms )