S10077

S10077 HAMAMATSU | Alldatasheet

Document overview

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Technical content

Features

/K6C Pixel pitch: 14 µm Pixel height: 50 µm /K6C Number of pixels: 1024 ch /K6C Single power supply operation: 3.3 to 5 V /K6C On-chip charge amplifier with excellent input/output characteristics /K6C Built-in timing generator allows operation with only start and clock pulse inputs /K6C Video data rate: 1 MHz Max. /K6C Spectral response range: 400 to 1000 nm /K6C Digital output /K6C 8-bit/10-bit switchable ADC /K6C Simultaneous all-pixel integration and variable integration time function /K6C Low power consumption

Applications

/K6C Analytical instrument /K6C Position detection /K6C Image reading IMAGE SENSOR CMOS linear image sensor Digital output, built-in 8/10-bit AD converter, single power supply operation S10077 is a CMOS linear image sensor designed for image input applications. The signal processing circuit has a charge amplifier with excellent input/output characteristics. The circuit also includes a 8-bit/10-bit AD converter. I Absolute maximum ratings Parameter Symbol Value Unit Supply voltage Vdd -0.3 to +6 V AD mode selection voltage Vsel -0.3 to +6 V Clock pulse voltage V (CLK) -0.3 to +6 V Start pulse voltage V (ST) -0.3 to +6 V Operating temperature *1 Topr -5 to +50 °C Storage temperature Tstg -10 to +60 °C *1: No condensation I Shape specifications Parameter Specification Unit Number of pixels 1024 - Pixel pitch 14 µm Pixel height 50 µm Active area length 14.336 mm Window material TENPAX -

CMOS linear image sensor S10077 I Recommended terminal voltage Parameter Symbol Min. Typ. Max. Unit Supply voltage Vdd 3.3 5 5.25 V 10-bit Vdd - 0.25 Vdd Vdd + 0.25 VAD mode selection voltage 8-bit Vsel 0 - 0.4 V High Vdd - 0.25 Vdd Vdd + 0.25 VClock pulse voltage Low V (CLK) 0-0 . 4 V High Vdd - 0.25 Vdd Vdd + 0.25 VStart pulse voltage Low V (ST) 0 - 0.4 V I Electrical characteristics (Ta=25 °C) Parameter Symbol Min. Typ. Max. Unit 10-bit 1 - 6Clock pulse frequency 8-bit f (CLK) 1-1 2 MHz Video data rate VR - f (CLK)/12 - Hz I Electrical and optical characteristics (Ta=25 °C) Parameter Symbol Min. Typ. Max. Unit Spectral response range λ 400 to 1000 nm Peak sensitivity wavelength λ p - 700 - nm Photo sensitivity * 2 RES - 42 - V/µJcm 2 Photo response non-uniformity * 3 *4 PRNU - - ±10 % 8-bit * 5 - 30 -Vdd=3.3 V 10-bit * 6 - 30 - 8-bit * 5 - 70 - Power consumption Vdd=5 V 10-bit * 6 P - 70 - mW 8-bit * 5 255 - -Vdd=3.3 V 10-bit * 6 1023 - - 8-bit * 5 255 - - Saturation output voltage * 7 Vdd=5 V 10-bit * 6 Vsat 1023 - - digit 8-bit * 5 11 29 41Vdd=3.3 V 10-bit * 6 44 116 164 8-bit * 5 7 19 27 Offset output voltage Vdd=5 V 10-bit * 6 Vo 28 76 108 digit 8-bit * 5 - 0.03 0.6Dark output * 8 Vdd=5 V 10-bit * 6 Vd - 0.12 2.4 digit 8-bit * 5 - 0.7 2Vdd=3.3 V 10-bit * 6 - 2.8 8 8-bit * 5 - 0.7 2Readout noise Vdd=5 V 10-bit * 6 Nr - 2.8 8 digit *2: λ =700 nm *3: Photo response non-uniformity (PRNU) is measured under the condition that the device is uniformly illuminated by light whic h is 50% of the saturation exposure level, using 1022 pixels excluding the pixels at both ends. PRNU is defined as follows: PRNU= ∆ X/X × 100 (%) Where X is the average output of all pixels and ∆ X is the difference between the maximum or minimum output and X with the offset subtracted. *4: Measured with a tungsten lamp of 2856 K *5: f (CLK)=12 MHz, T2 (ST)= 13200 CLK=1.1 ms *6: f (CLK)=6 MHz, T2 (ST)= 13200 CLK=2.2 ms *7: Absolute value with respect to 0 V *8: Output difference from Vo when the integration time is set to 10 ms. I Spectral response (typical example) 200 600 1000400 800 1200 WAVELENGTH (nm) RELATIVE SENSITIVITY (%) 100 (Ta=25 ˚C) KMPDB0229EB

CMOS linear image sensor S10077 I AD converter specifications (Ta=25 °C) Parameter Symbol Specification Unit Digital output format - Serial output - 10-bit mode 10Resolution *9 8-bit mode RESO 8 bit Vdd=5 V 0 to 3.3Conversion voltage range *10 Vdd=3.3 V - 0 to 2.2 V *9: Vsel=5 V (10-bit mode), 0 V (8-bit mode) *10: Digital output is available from MSB as serial output. 10-bit mode: D9 to D0 8-bit mode: D7 to D0 I Timing chart Parameter Symbol Min. Typ. Max. Unit Clock pulse rise and fall time tr (CLK), tf (CLK) 0 20 30 ns Start pulse time cycle T2 (ST) 12339 - 120000 CLK Start pulse low time T3 (ST) 45 - - CLK Start pulse high time *11 T4 (ST) 6000 - - CLK Start pulse rise and fall time tr (ST), tf (ST) 0 20 30 ns *11: Signal charge integration time equals the High period of start pulse + 7 CLK cycles. The shift register operation starts at the rise of CLK pulse immediately after ST pulse sets to low. Integration time can be changed by changing the High-to-Low ratio of ST pulses. 012345 10 15 20 25 34.5 33 45 57 41.5 46.5 53.5 AO1 34 42 D7 D0 46 54 D7 D0 45 5721 AO2 AO3 AO4 30 35 40 45 50 55 CLK ST EOS AO Trig (A) DO Trig (D) EOC T3 (ST) T4 (ST) T2 (ST) DO1 DO2 T1 (CLK) 8-bit mode G In the neighborhood of start pixel G In the neighborhood of last pixel CLK ST tf (CLK) tr (CLK) T1 (CLK) tf (ST) tr (ST) KMPDC0224EA 12322 12285 12297 12309 12320 12286 AO1023 12297 12282 12286 12294 12298 12306 12310 12318 12285 CLK ST EOS AO Trig (A) DO Trig (D) EOC T4 (ST) T2 (ST) 12298 AO1024 DO1022 DO1023 DO1024 KMPDC0225EA Note) When using analog output AO, read the AO output at the falling edge of T rig (A). When using digital output DO, read the DO output at the falling edge of T rig (D).

CMOS linear image sensor S10077 012345 10 15 20 25 34.5 43.5 46.5 55.5 33 45 57 AO1 34 44 46 56 D9 D0 D9 D0 45 5721 AO2 AO3 AO4 30 35 40 45 50 55 CLK ST EOS AO Trig (A) DO Trig (D) EOC T3 (ST) T4 (ST) T2 (ST) DO1 DO2 T1 (CLK) KMPDC0226EA 10-bit mode G In the neighborhood of start pixel G In the neighborhood of last pixel 12322 12285 12297 12309 12320 12297 12284 12286 12296 12298 12308 12310 12320 12285 12286 12298 CLK ST EOS AO Trig (A) DO Trig (D) EOC T4 (ST) T2 (ST) AO1023 AO1024 DO1022 DO1023 DO1024 I Dimensional outline (unit: mm, tolerance unless otherwise noted: ±0.1) ACTIVE AREA 14.336 41.6 ± 0.2 Package: LCP (Liquid Crystalline Polymer) 2.54 0.51 27.946.83 ± 0.2 7.168 ± 0.3 9.1 ± 0.1 10.2 ± 0.5 10 ± 0.3 4.23 ± 0.4 4.0 ± 0.5 ACTIVE AREA 50 µm 1.4 ± 0.15 3.0 1 ch 0.20 I Pin connection NC D. Trig DO A. Trig AO NC NC Vdd Vss NC NC NC NC ST CLK Vdd Vss Vsel NC EOC EOS NC NC NC 1024 KMPDA0202EB KMPDC0231EA

CMOS linear image sensor S10077 HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. Cat. No. KMPD1088E02 Sept. 2006 DN Pin No. Symbol Discription Pin No. Symbol Discription

1 NC No connection 13 NC No connection

2 D. Trig Trigger signal for digital output 14 NC No connection

3 DO Digital output 15 NC No connection

4 A. Trig Trigger signal for analog output 16 EOS End of scan signal

5 AO Analog output 17 EOC Digital conversion end signal

6 NC No connection 18 NC No connection

7 NC No connection 19 Vsel AD mode selection voltage

8 Vdd Supply voltage 20 Vss GND

9 Vss GND 21 Vdd Supply voltage

10 NC No connection 22 CLK Clock signal

11 NC No connection 23 ST Start signal

12 NC No connection 24 NC No connection

(1) Electrostatic countermeasures This device has a built-in protection circuit against static electrical charges. However, to prevent destroying the device with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static dis- charges. Also protect this device from surge voltages which might be caused by peripheral equipment. (2) Incident window If dust or dirt gets on the light incident window, it will show up as black blemishes on the image. When cleaning, avoid rubbing the window surface with dry cloth or dry cotton swab, since doing so may generate static electricity. Use soft cloth, paper or a cotton swab moistened with alcohol to wipe dust and dirt off the window surface. Then blow compressed air onto the window surface so that no spot or stain remains. (3) Soldering T o prevent damaging the device during soldering, take precautions to prevent excessive soldering temperatures and times. Soldering should be performed within 5 seconds at a soldering temperature below 260 °C.