RSD200N05 DOINGTER | Alldatasheet

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Channel MOSFET uses advanced SGT technology and www.doingter.cn — 1 — Description： This N- design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=40V,ID=86A,RDS(ON)< mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V ID * Continuous Drain Current-TC=25℃ 86 A IDM * 240 Ptot * 35 W IS 86 A TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC * Thermal Resistance,Junction to Case1 3.5 ℃/W RƟJA * Thermal Resistance,Junction to Ambient1 62.5 D S G Pulsed Source Current Total Power Dissipation Diode Forward Current 3.9 RSD200N05 All d ata sheet.com

www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 40 --- --- V IDSS Zero Gate Voltage Drain Current Tj=85℃ --- --- 30 μA VGS=0V, VDS=60V --- --- 1 IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1 1.5 2 V RDS(ON) a Drain-Source On Resistance2 VGS=10V,ID=20A --- mΩ VGS=4.5V,ID=10A --- 3.2 3.9 GFS Forward Transconductance VDS=10V, ID=4A --- S Dynamic Characteristicsb Ciss Input Capacitance VDS=20V, VGS=0V, f=1MHz --- 2554 pF Coss Output Capacitance --- 754 Crss Reverse Transfer Capacitance --- 53 Switching Characteristicsb td(on) Turn-On Delay Time --- 11 --- ns tr Rise Time --- 46 --- ns td(off) Turn-Off Delay Time --- 46 --- ns tf Fall Time --- 32 --- ns Qg Total Gate Charge VGS=10V, VDS=20V, ID=20A --- 48 --- nC Qgs Gate-Source Charge --- 9.3 --- nC Qgd Gate-Drain “Miller” Charge --- 8.2 --- nC Drain-Source Diode Characteristics VSD a Source-Drain Diode Forward Voltage2 VGS=0V,IS=20A --- --- 1.3 V VDS = 20 V, VGEN = 10 V, RG = 4.5 Ω, RL = 1 Ω, IDS = 20 A --- --- --- 4.5 5.2 RSD200N05 All d ata sheet.com

w ww.doingter.cn — 3 — trr Reverse Recovery Time 46 --- Ns qrr Reverse Recovery Charge 39 --- nc Notes: Typical Characteristics： (TC=25℃ unless otherwise noted) ISD = 20 A, dlSD/dt = 100 A/μs * Surface Mounted on 1 in2 pad area, t  10 sec Pulse width  10 s, duty cycle  1 % * limited by bonding wire a : Pulse test ; pulse width  300 s, duty cycle  2 % b : Guaranteed by design, not subject to production testing Power Capability Current Capability Ptot - Power (W) ID - Drain Current (A) Tj - Junction Temperature (° C) Tj - Junction Temperature (° C) Safe Operation Area Transient Thermal Impedance ID - Drain Current (A) Normalized Effective Transient VDS - Drain-Source Voltage (V) Square Wave Pulse Duration (sec) 0 25 50 75 100 125 150 175 TC=25 o C,VGS=10V 0 25 50 75 100 125 150 175 100 TC=25 o C,VGS=10V 0.01 0.1 1 10 100 500 0.01 0.1 100 600 100us 1msRds(on) Limit TC=25 o C 10ms 100ms DC 300us 1E-4 1E-3 0.01 0.1 1 10 100 1E-3 0.01 0.1 0.02 Mounted on 1in pad RJC :3.5 o C/W 0.01 0.05 0.1 0.2 Single Pulse Duty = 0.5 RSD200N05 All d ata sheet.com

www.doingter.cn — 4 — Output Characteristics On Resistance ID - Drain Current (A) RDS(ON) - On Resistance (mΩ) VDS - Drain-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics Normalized Threshold Voltage RDS(ON) - On Resistance (mΩ) Normalized Threshold Voltage VGS - Gate-Source Voltage (V) Tj - Junction Temperature (° C) 0 10 20 30 40 50 VGS= 4.5V VGS=10V 1 2 3 4 5 6 7 8 9 10 IDS=20A -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 IDS =250A RSD200N05 All d ata sheet.com

www.doingter.cn — —5 Normalized On Resistance Diode Forward Current IS - Source Current (A) Tj - Junction Temperature (° C) VSD - Source-Drain Voltage (V) Capacitance Gate Charge VGS - Gate-Source Voltage (V) VDS - Drain-Source Voltage (V) QG - Gate Charge (nC) -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 RON@Tj=25 o C: 2.4m VGS = 10V IDS = 20A 0.1 Tj=25 o C Tj=150 o C 0 5 10 15 20 25 30 35 40 500 1000 1500 2000 2500 3000 3500 4000 Frequency=1MHz Crss Coss Ciss 0 10 20 30 40 50 VDS= 20V IDS= 20A RSD200N05 All d ata sheet.com

www.doingter.cn — —6 Symbol Dimensions In Millimeters MIN. MAX. A 2.19 2.38 A1 0.02 0.13 D 5.30 6.40 E 6.35 6.80 E1 5.20 5.50 c 0.40 0.60 c1 0.40 0.60 b 0.55 0.85 e 2.30 BCS L 1.00 1.80 L1 0.70 1.80 L2 0.70 BCS L3 2.40 2.80 H 9.20 10.40 RSD200N05 0086-0755-8278-9056 All d ata sheet.com