RSD050N06

RSD050N06 DOINGTER | Alldatasheet

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www.doingter.cn — — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=60V,ID=10A,RDS(ON)<90mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TA=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-TC=25℃1 10 A Continuous Drain Current-TC=100℃1 7 Continuous Drain Current-TA=25℃1 3.4 Continuous Drain Current-TA=100℃1 2.7 IDM Pulsed Drain Current2 20 A PD Power Dissipation-TC=25℃4 20.8 W Power Dissipation-TA=25℃4 2 W EAS Single pulse avalanche energy3 6.3 mJ IAS Avalanche Current 11.2 A TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ D S G RSD050N06 All d ata sheet.com

www.doingter.cn — — Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case1 6 ℃/W RƟJA Thermal Resistance Junction-Ambient 1 62 Electrical Characteristics：(TA=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 60 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=48V,TJ=25℃ --- --- 1 μA VGS=0V, VDS=48V,TJ=55℃ --- --- 5 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1.2 --- 2.5 V RDS(ON) Drain-Source On Resistance2 VGS=10V,ID=10A --- --- 90 mΩ VGS=4.5V,ID=8A --- --- 100 mΩ GFS Forward Transconductance VDS=5V,ID=10A --- 7.6 --- S Dynamic Characteristics Ciss Input Capacitance VDS=15V, VGS=0V, f=1MHz --- 500 --- pFCoss Output Capacitance --- 35 --- Crss Reverse Transfer Capacitance --- 23 --- Switching Characteristics td(on) Turn-On Delay Time VGS=10V,VDD=30V, ID=10A,RG=3.3Ω --- 1.6 --- ns tr Rise Time --- 7.4 --- ns td(off) Turn-Off Delay Time --- 17.6 --- ns tf Fall Time --- 4 --- ns Thermal Characteristics： RSD050N06 All d ata sheet.com

www.doingter.cn — — Qg Total Gate Charge VGS=4.5V, VDS=48V, ID=10A --- 4.9 --- nC Qgs Gate-Source Charge --- 1.8 --- nC Qgd Gate-Drain “Miller” Charge --- 2.2 --- nC RG Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.2 --- Ω Drain-Source Diode Characteristics IS Max. Diode Forward Current1,5 VG=VD=0V , Force Current --- --- 10 A ISM Pulsed Source Current2,5 --- --- 20 A VSD Diode Forward Voltage2 VGS=0V,Is=1A,,TJ=25℃ --- --- 1.2 V trr Reverse Recovery Time IF=10A,TJ=25℃ diF/dt=100A/μs --- 9.7 --- ns Qrr Reverse Recovery Charge --- 6.1 --- nC Notes: Typical Characteristics： (TA=25℃ unless otherwise noted) 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 4. The power dissipation is limited by 150℃ junction temperature 5. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 0 0.5 1 1.5 2 2.5 3 3.5 4 VDS , Drain-to-Source Voltage (V) ID Drain Current (A) VGS=10V VGS=7V VGS=5V VGS=4.5V VGS=3V 100 2 4 6 8 10 VGS (V) RDSON (mΩ) ID=10A Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-Source RSD050N06 All d ata sheet.com

www.doingter.cn — — 0.2 0.4 0.6 0.8 1 VSD , Source-to-Drain Voltage (V) IS Source Current(A) TJ=150℃ TJ=25℃ 0.5 1.0 1.5 2.0 -50 0 50 100 150 TJ , Junction Temperature (℃) Normalized On Resistance Voltage Fig.3 Forward Characteristics of Reverse diode Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) v.s TJ Fig.6 Normalized RDSON v.s TJ 100 1000 1 5 9 13 17 21 25VDS Drain to Source Voltage(V) Capacitance (pF) F=1.0MHz Ciss Coss Crss Fig.8 Safe Operating AreaFig.7 Capacitance RSD050N06

0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (RθJC) 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PDM D = TON/T TJpeak = TC+PDMXRθJC TON T0.02 Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% IAS VGS BVDSS VDD EAS= 1

2 L x IAS

Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform RSD050N06 0086-0755-8278-9056 5 —— www.doingter.cn