RM25HG-24S POWEREX | Alldatasheet
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Technical content
Dimension Inches Millimeters B 0.81 Max. 20.5 Max. C 0.79 Min. 20.0 Min. K 0.10 2.5 Description: Powerex Super Fast Recovery Diodes are designed for use in applications requiring fast switching. Features: M Non-Isolated Package M Planar Chips M trr= 300 ns Max. Applications: M Snubber Circuits M Switching Power Supplies M Free Wheeling Ordering Information: Select the complete eight digit part number you desire from the table below. Example: RM25HG-24S is a
1200 Volt, 25 Ampere Super Fast
Recovery Single Diode. Current Rating Voltage Type Amperes Volts (x50) RM 25 24 Powerex,Inc.,200 Hillis Street,Youngw ood, Pennsylvania 15697-1800 (724) 925-7272 Super Fast Recovery Single Diode
25 Amperes/1200 Volts
A C D E E FB H NM K J L G - DIA. 1 2 3 1 2 3 4
Powerex,Inc.,200 Hillis Street,Youngw ood, Pennsylvania 15697-1800 (724) 925-7272 RM25HG-24S Super Fast Recovery Single Diode Characteristics Symbol Conditions RM25HG-24S Units Peak Reverse Blocking Voltage V RRM — 1200 Volts DC Reverse Blocking Voltage V R(DC) — 960 Volts DC Current, TC = 80°C (Resistive Load) I F(DC) — 25 Amperes Peak Half-Cycle Surge (Non-Repetitive) On-State Current (60Hz) IFSM — 500 Amperes I2t for Fusing, (8.3 milliseconds) I 2t— — A 2sec Storage Temperature T STG — -40 to 125 °C Operating Temperature T j — -40 to 150 °C Maximum Mounting Torque M3 Mounting Screw — — 10 kg.-cm. Weight (Typical) — — 10 G rams Electrical and Thermal Characteristics,Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions RM25HG-24S Units Blocking State Maximums Reverse Leakage Current, Peak I RRM Tj= 125°C, VRRM = Rated 1 mA —T j= 25°C, VRRM = Rated 0.1 mA Conducting State Maximums Peak On-State Voltage V FM Tj= 25°C, IFM = 100A 4.0 Volts Switching Minimums Reverse Recovery Time t rr Tj= 25°C, IFM = 100A 0.3 ms Reverse Recovery Charge Q rr di/dt = -500A/ms, VR = 600V — mC Lead Strength — Tension Load: 2.5 kg. 30 s — Bending Load: 1 kg. Bent to 90 o 2 Times Thermal Maximums Thermal Resistance, Junction-to-Case R u(J-C) Diode 0.5 °C/W att Contact Thermal Resistance, Case-to-Fin R u(C-S) Case to Fin, Thermal Grease Applied 0.5 °C/W att FORWARD VOLTAGE DROP, V F, (VOLTS) FORWARD CURRENT, I F, (AMPERES) FORWARD CHARACTERISTICS (TYPICAL) 100 101 102 Tj = 25oC FORWARD CURRENT, I F (A) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 100 101 102 REVERSE RECOVERY TIME, I rr, (nS) REVERSE RECOVERY TIME, I rr, (AMPERES) 101 102 103 100 101 102 Tj = 25oC di/dt = 50A/µsec trr Irr