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Document overview

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Technical content

Features

■ RF Frequency: 12GHz to 16GHz ■ LO Frequency: 8GHz to 20GHz ■ IF Frequency: DC to 4GHz ■ Maximum Conversion Gain: 23dB ■ Minimum Conversion Gain: -10dB ■ Noise Figure (Maximum Gain): 11dB ■ Noise Figure (Minimum Gain): 17dB ■ OIP3 (Maximum Gain): +28dBm ■ OIP3 (Minimum Gain): +12dBm ■ Image Rejection: 20dBc

Applications

■ Point-to-Point ■ VSAT RFUV1003

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS140213 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 10 RFUV1003 Absolute Maximum Ratings Parameter Rating Unit LPA Drain Voltage Vd 6 V LOA Drain Voltage 6 V RF Input Power 15 dBm LO Input Power 15 dBm TOPER -40 to +85 °C TSTOR -65 to +150 °C ESD Human Body Model Class 1A Caution! ESD sensitive device. RFMD Green: RoHS compliant per EU Directive 2011/65/EU, halogen free per IEC 61249-2-21, <1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony solder. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. Nominal Operating Parameters Parameter Specification Unit Condition Min Typ Max General Performance RF Frequency 12 16 GHZ LO Frequency 8 20 GHZ IF Frequency DC 4 GHZ LO input Drive -1 0 +5 dBm Conversion Gain (Max.) 20 23 24 dB Conversion Gain (Min.) -9 -10 -11 dB NF (max. Gain) 11 13 dB NF (min. Gain) 17 21 dB OIP3 (max. Gain) 25 28 dBm OIP3 (min. Gain) 9 12 dBm Image Rejection 15 20 dBc LO Leakage at RF-Port (Maximum Gain) -5 5 dBm With IQ bias LO Return Loss 10 dB RF Return Loss 10 dB VD 5 V ID 380 500 mA VVA -4 0 V

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS140213 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 3 of 10 RFUV1003 Typical Electrical Performance Measurements performed with I and Q (IF) ports connected to an external 90° Hybrid, LO Power = 0dBm and IF = 2.5GHz, -10dBm unless otherwise stated

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS140213 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 4 of 10 RFUV1003 Typical Electrical Performance (continued)

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS140213 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 5 of 10 RFUV1003 Typical Electrical Performance (continued)

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS140213 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 6 of 10 RFUV1003 Typical Electrical Performance (continued)

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS140213 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 7 of 10 RFUV1003 Typical Bias Sequence and Gain Control Optimum linearity versus gain is achieved using sequential bias. At maximum gain (VC1 ,VC4), VC2 and VC3 are set at -4V. (VC1 ,VC4), VC2 and VC3 are biased in sequence. The first dynamic range is achieved by setting VC2 and VC3 at -4V and varying (VC1 ,VC4) over the (-4V to -1.25V) range as shown in the table below. Similarly second dynamic range is achieved by setting (VC1 ,VC4) at -1V, setting VC3 to -4V and varying VC2 over the (-2.5V to -1.25V) range. Finally third dynamic range is achieved by setting (VC1 ,VC4) and VC2 at -1V, and varying VC3 over the (-2.5V to -1V) range. Bias Sequence 1 (Typical) Gmax Gmin VC1, Package Outline Drawing (Dimensions in millimeters)

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS140213 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 8 of 10 RFUV1003 Pin Names and Descriptions Pin Name Description

1 N/C

2 GND Ground

3 LO Local oscillator input. AC coupled and matched to 50Ω

4 GND Ground

8 VLOA1 LOA stage 1 drain bias

9 VLOA2 LOA stage 2 drain bias

10 VMPA MPA drain bias

11 N/C

12 GND Ground

13 RFOUT RF output. AC coupled and matched to 50W

14 GND Ground

15 N/C

16 VC3 Control line number 3 (See bias sequence description)

17 VC2 Control line number 2 (See bias sequence description)

21 VC1 Control line number 1 (See bias sequence description)

22 VLPA1, VLPA2 LPA stage 1,2 drain bias

23 N/C

24 VC4 Control line number 4 (See bias sequence description)

25 N/C

26 Q IF Q input

27 GND Ground

30 I If I input

31 GND Ground

32 N/C

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS140213 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 9 of 10 RFUV1003 Application Circuit Block Diagram

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS140213 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 10 of 10 RFUV1003 Evaluation Board Layout Test Condition Sub-Band Frequency Ranges LO Power 0dBm Band Frequency Range IF Power -10dBm 10GHz 10GHz to 10.5GHz VLOA1, VLOA2 5V 11GHz 10.7GHz to 11.7GHz VLPA1, VLPA2, VMPA 5V 13GHz 12.75GHz to 13.25GHz (VC1, VC4), VC2, VC3 -4V to 0V 15GHz 14.4GHz to 15.4GHz