RFSW2100D

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Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 11

Technical content

Features

■ Broadband Operation 30MHz to 6GHz ■ Advanced GaN HEMT Technology ■ 2GHz Typical Performance  Insertion Loss: 0.34dB  Isolation: 37dB  P0.1dB of 55W at -40V VLOW ■ Small Form Factor  1 x 0.8mm ■ High Power Capability  P0.1dB of 55W ■ Designed to Present 50Ω I/O ■ Hot Switching Capable

Applications

■ Military Communicaiton ■ Electronic Warfare ■ Commercial Wireless Infrastructure ■ Cellular and WiMAX Infrastructure ■ Civilian and Military Radar ■ General Purpose Broadband Amplifiers ■ Public Mobile Radios ■ Industrial, Scientific, and Medical RFSW2100D RFSW2100D

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS131029 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 11 RFSW2100D Absolute Maximum Ratings Parameter Rating Unit Max Control Bias -60 V CW RF Input Power 69 W Storage Temperature Range -55 to +125 °C Operating Temperature (Case) -40 to +85 °C Operating Junction Temperature (TJ) 250 °C Human Body Model (based on packaged device) Class 1A MTTF @ -40V OFF Control Bias (95% Confidence Limits)* (TJ < 200°C) (TJ < 250°C) 3.0 x 108 1.0 x 107 Hours Hours Thermal Resistance, Rth (junction to case)*** (Expected value at TC = 85°C) DC 10.5 °C/W Caution! ESD sensitive device. RFMD Green: RoHS compliant per EU Directive 2011/65/EU, halogen free per IEC 61249-2-21, <1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony solder. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table above. *MTTF - median time to failure as determined by the process technology wear-out failure mode. Refer to product qualification report for FIT(random) failure rate. User will need to define this specification in the final application and ensure bias conditions satisfy the following expression: PDISS < (TJ – TC) / RTH J-C and TC = TCASE to maintain maximum operating junction temperature and MTTF. *The thermal resistance quoted here (10.5C/W) is the thermal resistance of the GaN-on-SiC die itself, not including the contribution of any particular attach method. Rth is defined as (TJ – TC) / Power, where TC is measured at the bottom of the SiC. Nominal Operating Parameters Parameter Specification Unit Condition Min Typ Max Recommended Operating Conditions OFF Control Bias -20 -40 V ON Control Bias 0 V RF I/O Impedance 50 Ω Functional Test RFC-RF1 Insertion Loss -0.25 dB Frequency = 880MHz PIN = 30dBm VC1 = 0V VC2 = -10V RFC-RF2 Insertion Loss -0.25 dB Frequency = 880MHz PIN = 30dBm VC1 = -10V VC2 = 0V RFC-RF1 Isolation -60 dB Frequency = 880MHz PIN = 30dBm VC1 = -10V VC2 = 0V RFC-RF2 Isolation -60 dB Frequency = 880MHz PIN = 30dBm VC1 = 0V VC2 = -10V RFC-RF1 2nd Harmonic -20 dBm Frequency = 880MHz PIN = 30dBm VC1 = 0V VC2 = -10V RFC-RF2 2nd Harmonic -20 dBm Frequency = 880MHz PIN = 30dBm VC1 = -10V VC2 = 0V RFC-RF1 3rd Harmonic -10 dBm Frequency = 880MHz PIN = 30dBm VC1 = 0V VC2 = -10V RFC-RF2 3rd Harmonic -10 dBm Frequency = 880MHz PIN = 30dBm VC1 = -10V VC2 = 0V RFC-RF1 - VC1 Current 250 µA Frequency = 880MHz PIN = 30dBm VC1 = 0V VC2 = -10V RFC-RF2 - VC1 Current -600 µA Frequency = 880MHz PIN = 3 0dBm VC1 = -10V VC2 = 0V RFC-RF1 - VC2 Current 250 µA Frequency = 880MHz PIN = 30dBm VC1 = 0V VC2 = -10V RFC-RF2 - VC2 Current -600 µA Frequency = 880MHz PIN = 30dBm VC1 = -10V VC2 = 0V

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS131029 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 3 of 11 RFSW2100D Parameter Specification Unit Condition Min Typ Max Power Performance - Typical Frequency Range* DC 6 GHz Power performance measured at 2GHz, VLOW control bias of -40V, controlled Tbase 25°C P0.1dB 55 W P0.1dB 47.4 dbm Linearity - Typical Second Harmonic (Pf2) 82 dBc Pin = 30dBm Frequency = 2GHz VC = -40V Third Harmonic (Pf3) 79 dBc Pin = 30dBm Frequency = 2GHz VC = -40V Third Order Intercept 69 dBc Pin = 30dBm and Tone1 = 1.995GHz Tone2 = 2.005GHz Small Signal Performance of Packaged Device – Typical (ON/OFF port refers to either of RF1/RF2, as dictated by bias at VC1 and VC2, the truth table for which is shown on page 9). Insertion Loss (RFC to ON Port) Isolation (RFC to OFF Port) Input Return Loss (RFC) -0.29 -48.1 -31.3 dB dB dB F = 1GHz F = 1GHz F = 1GHz Insertion Loss (RFC to ON Port) Isolation (RFC to OFF Port) Input Return Loss (RFC) -0.35 -38.4 -23.7 dB dB dB F = 2GHz F = 2GHz F = 2GHz Insertion Loss (RFC to ON Port) Isolation (RFC to OFF Port) Input Return Loss (RFC) -0.59 -31.1 -14.7 dB dB dB F = 3GHz F = 3GHz F = 3GHz Insertion Loss (RFC to ON Port) Isolation (RFC to OFF Port) Input Return Loss (RFC) -0.74 -26 -13.6 dB dB dB F = 4GHz F = 4GHz F = 4GHz *Input power handling will reduce < 30MHz

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS131029 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 4 of 11 RFSW2100D Typical Small Signal Performance (PIN = 0dBm) verses Frequency, Measured with VC = 40V Over Varying Temperature

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS131029 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 5 of 11 RFSW2100D Typical Small Signal Performance (PIN = 0dBm) verses Frequency, Measured at Room Temperature over Varying Control Bias

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS131029 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 6 of 11 RFSW2100D Typical Performance (continued) Test Conditions: CW Operation, base temperature measured via thermocouple embedded in heatsink mounted to evaluation pcb.

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS131029 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 7 of 11 RFSW2100D Harmonics Switching Time Switching Speed – ON = 40ns VLOW = 0/-20, Switching frequency= 10kHz, Pin = -8dBm Switching Speed – OFF = 22ns VLOW = 0/-20, Switching frequency= 10kHz, Pin = -8dBm

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS131029 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 8 of 11 RFSW2100D Die Drawing (Dimensions in millimeters) Pin Names and Descriptions Pin Name Description

1 GND Ground connection

2 RF2 RF port 2, internally matched to 50Ω

3 GND Ground connection

4 VC1 Logic control for RF1

5 GND Ground connection

6 VC 2 Logic control for RF2

7 GND Ground connection

8 RF1 RF port 1, internally matched to 50Ω

9-10 GND Ground connection

11 RFC RF common port, internally matched to 50Ω

12 GND Ground connection

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS131029 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 9 of 11 RFSW2100D Bias Instruction for RFSW2100D Die ESD Sensitive Material. Please use proper ESD precautions when handling devices die. Die must be mounted with minimal die attach voids for proper thermal dissipation and power handling capability. This device uses depletion mode HEMT’s and must have recommended gate voltage applied prior to applying RF power. 1. Mount device on carrier or package with minimal die attach voiding and apply proper heat removal techniques. 2. Connect ground to the ground supply terminal. 3. Ensure that all 3 RF ports are connected to external RF connections through dc blocking elements for protection to RF connected devices in case of GaN RF switch failure event. 4. Apply VLOW to appropriate control port, as defined by truth table. 5. Apply VHIGH to appropriate control port, as defined by truth table. 6. Apply RF signal. Switch Status Logic Control RF1 to RFC RF2 to RFC VC1 VC2 Off On High Low On Off Low High High = 0V Low = -20V to -40V

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS131029 trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc. 10 of 11 Assembly Notes Die Storage  Individual bare die should be held in appropriately sized ESD waffle trays or ESD GEL packs.  Die should be stored in CDA/N2 cabinets and in a controlled temperature and humidity environment. Die Handling  Die should only be picked using an automated or semi-automated pick system and an appropriate pick tool.  Pick parameters will need to be carefully defined so as not to cause damage to either the top or bottom die surface.  GaN HEMT devices are ESD sensitive materials. Please use proper ESD precautions when handling devices or evaluation boards.  RFMD does not recommend operating this device with typical drain voltage applied and the gate pinched off in a high humidity, high temperature environment. Caution: The use of inappropriate or worn -out ejector needle and improper ejection parameter settings can cause die backside tool marks or micro-cracks that can eventually lead to die cracking. Die Attach There are two commonly applied die attach processes: adhesive die attach and eutectic die attach. Both processes use special equipment and tooling to mount the die. EUTECTIC ATTACH  80/20 AuSn preform, 0.5mil to 1mil thickness, made from virgin melt gold.  Pulsed heat or die scrub attach process using automated or semi-automatic equipment.  Attach process carried out in an inert atmosphere.  Custom die pick collets are required that match the outline of the die and the specific process employed using either pulsed, fixed heat, or scrub.  Maximum temperature during die attach should be no greater than 320°C and for less than 30 seconds.  Key parameters that need to be considered include: die placement force, die scrub profile and heat profile.  Minimal amount of voiding is desired to ensure maximum heat transfer to the carrier and no voids should be present under the active area of the die.  Voiding can be measured using X-ray or Acoustic microscopy.  The acceptable level of voiding should be determined using thermal modeling analysis. ADHESIVE ATTACH  High thermal silver filled epoxy is dispensed in a controlled manner and die is placed using an appropriate collet. Assembled parts are cured at temperatures between 150°C and 180°C.  Always refer to epoxy manufacturer's data sheet.  Industry recognized standards for epoxy die attach are clearly defined within MIL-883.

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS131029 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 11 of 11 RFSW2100D Mounting and Thermal Considerations The thermal resistance provided as RTH (junction to case) represents only the packaged device thermal characteristics. This is measured using IR microscopy capturing the device under test temperature at the hottest spot of the die. At the same time, the package temperature is measured using a thermocouple touching the backside of the die embedded in the device heatsink but sized to prevent the measurement system from impacting the results. Knowing the dissipated power at the time of the measurement, the thermal resistance is calculated. In order to achieve the advertised MTTF, proper heat removal must be considered to maintain the junction at or below the maximum of 200°C. Proper thermal design includes consideration of ambient temperature and the thermal resistance from ambient to the back of the package including heatsinking systems and air flow mechanisms. Incorporating the dissipated DC power, it is possible to calculate the junction temperature of the device. DC Bias The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts VGS the drain of the device is saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken to a potential lower than the source voltage to pinch off the device prior to applying the drain voltage, taking care not to exceed the gate voltage maximum limits.