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Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
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Technical content

Features

■ POUT = 29dBm; EVM = -30dB 11n MCS7 ■ Input and Output Matched to 50Ω ■ High Gain: 33dB ■ Integrated Power Detector ■ High Impedance Enable Pin ■ High PAE Design

Applications

■ IEEE 802.11b/g/n WiFi Systems ■ Customer Premise Equipment (CPE) ■ Wireless Access Points, Gateways & Routers ■ Microcells RFPA5201E

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS140331 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 7 RFPA5201E Absolute Maximum Ratings Parameter Rating Unit Supply Voltage (RF Applied) -0.5 to +5.5 V Supply Voltage (No RF Applied) -0.5 to +6.0 V DC Supply Current 1800 mA Input RF Power with 50W Output Load 10 dBm Maximum VSWR with no damage 10:1 Operating Ambient Temperature -40 to +85 °C Storage Temperature -40 to +150 °C Moisture Sensitivity Level MSL3 Caution! ESD sensitive device. RFMD Green: RoHS status based on EU Directive 2011/65/EU (at time of this document revision), halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. Nominal Operating Parameters Parameter Specification Unit Condition Min Typ Max Compliance 802.11b/g/n Operating Frequency 2412 2484 MHz Supply Voltage 4.75 5 5.25 V 802.11n HT20 and HT40 MCS7 PA_EN Voltage High 1.75 2.9 5 V Can be tied to Vreg when using 2.85v min and sources 12mA typ. PA_EN Voltage Low 0 0.2 V Turns PA OFF Typical Conditions VCC = 5.0V, VREG = 2.9V, PA_EN = 2.9V; 11n MCS7 HT20 and HT40, temperature = 25°C, unless otherwise noted Output Power 29 dBm 802.11n HT20 and HT40 MCS7 11n Dynamic EVM 2.5 3 % Second Harmonic -38 -36 dBm/MHz At rated POUT Third Harmonic -48 -45 dBm/MHz Gain 31.5 33.5 dB Gain Variation +/-1 dB Over 40MHz channel +/-2.5 dB Over temperature of -40°C to +85°C Power Detect Range 0.1 2.2 V POUT = 0dBm to 30dBm Power Detect Voltage 1.8 1.9 2.0 V At rated POUT Input Return Loss -15 -12 dB In specified frequency band Output Return Loss -10 -8 dB Operating Current 875 1000 mA At rated POUT Quiescent Current 350 425 mA VCC = 5.0, VREG = PA_EN = 2.9V and RF = OFF PAE (Power Added Efficiency) 18.5 % At rated POUT (PA only) Power Down Current 16 mA PA_EN = 0V, VCC = 5V, VREG = 2.9V IREG 12 15 mA VCC=5V, PA_EN = 2.9V, VREG = 2.9V Leakage Current 0.5 0.7 mA VCC=5V, VREG = 0V, PA_EN=0V

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS140331 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 3 of 7 RFPA5201E Parameter Specification Unit Condition Min Typ Max Typical Conditions (continued) VCC = 5.0V, VREG = 2.9V, PA_EN = 2.9V; 11n MCS7 HT20 and HT40, temperature = 25°C, unless otherwise noted Turn-on time from setting of VREGS 1 µsec Output stable to within 90% of final gain Turn-off time from setting of VREGS 1 µsec Stability -25 33 dBm No spurs above -47dBm into 4:1 VSWR Output P1dB 35 dBm CW signal Spectral Mask Margin to 802.11n limits 2 dB POUT = 31dBm; MCS0 HT20 General Performance ESD Human Body Model 500 V EIA/JESD22-114A all pins Charge Device Model 1000 V JESD22-C101C all pins Thermal Resistance Theta_jc 13 °C/W POUT - 29dBm; duty cycle - 90%; VCC = 5V; VREG = 2.90V; junction to bottom of laminate package; TREF = 85°C Theta_j-ref 18 °C/W POUT - 29dBm; duty cycle - 90%; VCC = 5V; VREG = 2.90V; junction to bottom of PCB; TREF = 85°C Junction Temperature for Long Term Reliability (Tjmax) 175 °C POUT - 29dBm; VCC = 5V; VREG = 2.90V; TREF = 85°C

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS140331 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 4 of 7 RFPA5201E Evaluation Board Schematic VREG PA_EN GND GND VCC HDR_1X7 RFIN PA_EN 330pF VREG PDET PDET RFOUT VCC 10uF PA_EN RF_In GND PA_EN VCC3 RF_Out GND GND2 13 GND GND VCC VREG VCC3 PDet 1uF 1uF 2 0 ΚΩ VCC

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS140331 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 5 of 7 RFPA5201E Pin Out PA_EN RF_In GND PA_EN VCC3 RF_Out GND GND2 13 GND GND VCC VREG VCC3 PDet Package Drawing Notes 1. Shaded area represents Pin 1 location. 2. Thermal vias for center slug “B” should be incorporated into the PCB design. The number and size of thermal vias will depend on the application Example of the number and size of vias can be found on the RFMD evaluation board layout

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS140331 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 6 of 7 RFPA5201E PCB Pattern Notes 1. Shaded area represents Pin 1 location.

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS140331 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 7 of 7 RFPA5201E Pin Names and Descriptions Pin Name Description 1 VCC This pin is connected internally to the collectors of RF device. To achieve specified performance, the layout of the pin should match the Recommended Land Pattern. 2 PA_EN High Impedance enable pin, Apply < 0.6VDC to power down the PA. Apply 1.75VDC to 5VDC to enable the PA. 3 GND Ground connection. 4 RF_IN RF input, is internally matched to 50Ω. DC Blocked 5 GND Ground connection. 6 PA_EN High Impedance enable pin, Apply < 0.6VDC to power down the PA. Apply 1.75VDC to 5VDC to enable the PA. 7 VREG PA bias voltage. This pin requires regulated supply for best performance. 8 PDET Power detector provides an output voltage proportional to the RF output power level. 9 VCC3 This pin is connected internally to the collectors of RF device. To achieve specified performance, the layout of the pin should match the Recommended Land Pattern 10 GND Ground connection. 11 RFOUT RF output. Internally matched to 50Ω and DC Blocked 12 GND Ground connection. 13 GND Ground connection. 14 VCC3 This pin is connected internally to the collectors of RF device. To achieve specified performance, the layout of the pin should match the Recommended Land Pattern Pkg Base GND Ground connection. The back side of the package should be connected to the ground plane through as short connection as possible, e.g., PCB vias under the device are recommended.