RFPA1802 RFMD | Alldatasheet

Document overview

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Technical content

Features

■ POUT = 24dBm, 25% PAE, with 3.3V, 20MHz LTE DL, CFR 7.5dB ■ ACP <-50dBc with DPD ■ 28dB Gain over 1600MHz to 2000MHz ■ Instantaneous P3dB = 32dBm at 3.3V ■ Designed to Support Flexible VCC 0.5V to 4.5V for PAE Optimization ■ Envelope Tracking Compatible ■ Integrated Power Coupler ■ Integrated 50Ω Matching ■ Integrated Biasing ■ No External DC Block Needed ■ 3 Power Mode Operation ■ GPIO Interface ■ Ultra Small and Low Profile

Applications

■ Power Amplifier, Power Amplifier Driver ■ Small Cell Base Stations ■ Wideband Instrumentation ■ Customer Premise Equipment ■ Data Cards RFPA1802

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS150602 trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc. 2 of 10 RFPA1802 Absolute Maximum Ratings Parameter Rating Unit Supply Voltage in Standby Mode 6.0 V Supply Voltage in Idle Mode 6.0 V Supply Voltage in Operating Mode 6.0 V Supply Voltage, VBATT 6.0 V Control Voltage, VEN, VMODE0, VMODE1 3.5 V RF – Input Power (CW, VCC = 3.3V, 50Ω Load) +10 dBm RF – Output Power (CW, 50Ω Load) +30 dBm Output Load VSWR (LTE DL 7.5dB CFR, VCC = 4.5V, PFORWARD <24dBm) 8:1 ESD Rating, All Pins, HBM, JESD22-A114 2000 V ESD Rating, All Pins, CDM, JESD22-C101 1000 V Moisture Sensitivity Level MSL3 Caution! ESD sensitive device. RFMD Green: RoHS status based on EU Directive 2011/65/EU (at time of this document revision), halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. Recommended Operating Condition Parameter Specification Unit Min Typ Max Operating Temperature Range -30 +25 +85 °C Operating Junction Temperature 125 °C VBATT +3 +3.3 +4.5 V VCC 1 +0.5 +3.3 +4.5 V Note: VCC down to 0.5V may be used for backed-off power when using DC-DC converter to conserve battery current. Nominal Operating Parameters Parameter Specification Unit Condition Min Typ Max General Performance Operating Frequency 1600 2000 MHz VEN, Low Level 0 0.5 V PA Disabled VEN, High Level 1.5 1.8 3 V PA Enabled VMODE0, VMODE1, Low Level 0 0.5 V For logic “low” VMODE0, VMODE1, High Level 1.5 1.8 3 V For logic “high” Maximum Linear Output POUT 1, 2 24 dBm High power mode (HPM); VCC = 3.3V Thermal Resistance 37 °C/W To backside of evaluation board Notes: 1. For operation at VBATT = 3.0V, de-rate POUT by 2.0dB 2. POUT is specified for 20MHz LTE downlink with CFR 7.5dB, -50dBc ACPR using digital or analog predistortion

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS150602 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 3 of 10 RFPA1802 Parameter Specification Unit Condition Min Typ Max Band 3 Downlink Electrical Specifications Unless Otherwise Specified: Temp = 25°C, VBATT = +3.3V, VEN = +1.8V, Freq = 1830MHz, 50Ω, 20MHz LTE DL with 7.5dB CFR Gain 25.5 28.5 31.5 dB High Power Mode (HPM), POUT = 24dBm, VCC = 3.3V 20.5 23.5 26.5 dB Medium Power Mode (MPM), POUT = 14dBm, VCC = 1.5V 11.5 14.5 17.5 dB Low Power Mode (LPM), POUT = 3dBm, VCC = 0.7V ACLR 1 -32 dBc HPM, POUT = 24dBm, VCC = 3.3V, without DPD -50 dBc HPM, POUT = 24dBm, VCC = 3.3V, with DPD ACLR 2 -48 dBc HPM, POUT = 24dBm, VCC = 3.3V, without DPD -60 dBc HPM, POUT = 24dBm, VCC = 3.3V, with DPD PA Efficiency (PAE) 25 % HPM, POUT = 24dBm, VCC = 3.3V PA Current Drain 294 mA HPM, POUT = 24dBm, VCC = 3.3V PA Quiescent Current 119 mA HPM, VCC = 3.3V 80 mA MPM, VCC = 1.5V 38 mA LPM, VCC = 0.8V Noise Figure 3.3 dB Input Impedance 1.8:1 2:1 VSWR No external matching, POUT ≤ 24dBm, all modes IM3 -15 dBm Two tones passed 600kHz, HPM, Total POUT ≤ 24dBm, VCC = 3.3V IM5 -20 dBm Two tones passed 600kHz, HPM, Total POUT ≤ 24dBm, VCC = 3.3V Harmonics 2f0 -14 dBm CW POUT ≤ 24dBm, all power modes Harmonics 3f0 -27 dBm CW POUT ≤ 24dBm, all power modes Enable Current 0.1 mA Sources or sink current, VEN = 1.8V Mode Current 0.1 mA Source or sink current, VMODE0, VMODE1 = 1.8V Leakage Current 5 µA DC only; VCC = VBATT = 4.5V, VEN = VMODE0 =VMODE1 = 0V DC Enable Time 10 µs DC only; Time from VEN = high to stable idle current (90% of steady state value) RF Rise/Fall Time 10 µs POUT ≤ 24dBm, all modes, 90% of target, DC settled prior to RF Coupling Factor 18.5 20.5 22.5 dB POUT ≤ 24dBm, all modes Coupling Accuracy – Temp / Voltage -0.5 0.5 dB POUT ≤ 24dBm, all modes 30°C ≤ T ≤ 85°C , VCC as required, referenced to 25°C, 3.3V conditions Coupling Accuracy – VSWR -0.8 0.8 dB POUT ≤ 24dBm, all modes, load VSWR = 2.5:1 Output Load VSWR Stability (Spurious Emissions) -60 dBc POUT ≤ 24dBm, all conditions, load VSWR = 8:1, all phase angles

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS150602 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 4 of 10 RFPA1802 Mode Control Table Mode of Operation VEN VMODE0 VMODE1 VCC Power Down Low Low Low X Standby Mode Low X X On High Power Mode (HPM) High Low Low On Medium Power Mode (MPM) High High Low On Low Power Mode (LPM) High High High On Typical Application Schematic 1600MHz to 2000MHz Application Circuit CPL_OUT VMODE0 RF_IN RF_OUT VBAT VEN VCC 10nF 4.7µF 22µF U1 VMODE1 1nF CPL_IN 5 6 Bias, mode & enable controls 4.7µF 1nF

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS150602 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 5 of 10 RFPA1802 Typical Performance: VCC = 3.3V unless otherwise noted

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS150602 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 6 of 10 RFPA1802 ACP with DPD, LTE DL 7.5dB CFR VCC = 3.3V, ICC = 299mA, 1830MHz

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS150602 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 7 of 10 RFPA1802 ACP with DPD, LTE DL 7.5dB CFR VCC = 3.3V, ICC = 267mA, 1650MHz

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS150602 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 8 of 10 RFPA1802 Evaluation Board Schematic 1600MHz to 2000MHz Application Circuit J2J1 CPL_OUT DNI VMODE0 RF_IN RF_OUT VBAT C7C5 VEN DNI VCCC8 10nF 4.7µF DNI 22µF U1 C11 DNI C10 DNI VMODE1 DNI P1_1 P1_2 P1_3 P1_4 P1_5 P1_6 P1_7 P1_8 P1_9 GND VEN VMODE0 VMODE1 VBAT GND VCC GND VCC_S C12 DNI CPL_IN DNI 5 6 Bias, mode & enable controls 1nF 4.7µF 1nF Evaluation Board Bill of Materials (BOM) 1600MHz to 2000MHz Application Circuit Description Reference Designator Manufacturer Manufacturer's P/N DUT U1 RFMD, Inc. RFPA1802 CAP, 22µF, 10%, 10V, TANT-A C4 AVX Corporation TAJA226K010RNJ CAP, 4.7µF, 10%, 6.3V, X5R, 0805 C5-C6 Taiyo Yuden (USA), Inc. CE MJK212 BJ475KD-T CAP, 1000pF, 10%, 50V, X7R, 0402 C7, C9 Taiyo Yuden (USA), Inc. RM UMK105BJ102KV-F CAP, 10000pF, 10%, 25V, X7R, 0402 C8 Taiyo Yuden (USA), Inc. RM TMK105BJ103KV-F CONN, SMA, EL MINI FLT 0.048” SPE-000311 J1-J4 Amphenol RF Asia Corp. 901-10362 CONN, HDR, ST, PLRZD, 9-PIN P1 ITW Pancon MPSS100-9-C Do Not Place C1-C3, C10-C12, R1-R2

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS150602 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 9 of 10 RFPA1802 Evaluation Board Assembly Drawing 1600MHz to 2000MHz Application Circuit

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS150602 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 10 of 10 RFPA1802 Pin Names and Descriptions Pin Name Description

1 VBATT Supply Voltage for bias circuitry

2 RFIN RF Input; Connect to 50Ω nominally, presents as DC ground. 3 VMODE1/GND Digital control input for power mode selection. Connect to GND if HPM and MPM only operations.

4 VMODE0 Digital control input for power mode selection

5 VEN Digital control input for enable/disable of PA

6 CPL_OUT Coupler Output

7 GND Ground

8 CPL_IN Coupler Input

9 RFOUT RF Output; Connect to 50Ω nominally, present as DC ground

10 VCC Supply voltage for PA stages which can be connected to battery supply or output of DC-DC converter PCK BASE GND Ground Connection; This package backside should be soldered toa topside ground pad connecting to the PCB ground plane with multiple ground via. The pad should have a low thermal resistance and low electrical impedance to the ground plane. Package Outline (Dimensions in millimeters)