RFP50N05L_04 AUSTIN | Alldatasheet

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Technical content

Features

  • 50A, 50V r DS(ON) = 0.022Ω  UIS SOA Rating Curve (Single Pulse)  Design Optimized for 5V Gate Drive  Can be Driven Directly from CMOS, NMOS, TTL Circuits  Compatible with Automotive Drive Requirements  SOA is Power Dissipation Limited  Nanosecond Switching Speeds  Linear Transfer Characteristics  High Input Impedance  Majority Carrier Device  Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Packaging JEDEC TO-220AB

Ordering Information

RFP50N05L TO-220AB F50N05L NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., RFP50N05L9A. D G S GATE DRAIN (FLANGE) SOURCE DRAIN Data Sheet August 2004

©2004 Fairchild Semiconductor Corporation RFP50N05L Rev. C Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP50N05L UNITS 130 A A 110 0.88 W W/oC Maximum Temperature for Soldering 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical SpecificationsTC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS ID = 250µA, VGS = 0V (Figure 10) 50 - - V Gate Threshold Voltage V GS(TH) VGS = VDS , ID = 250µA (Figure 9) 1 - 2 V Zero Gate Voltage Drain Current I DSS VDS = Rated BVDSS , VGS = 0 - - 25 µA VDS = 0.8 x Rated BVDSS , VGS = 0, TC = 150oC - - 250 µA Gate to Source Leakage Current I GSS VGS = ±10V, VDS = 0V - - ±100 nA Drain to Source On Resistance (Note 2) r DS(ON) ID = 50A, VGS = 5V (Figure 7) - - 0.022 Ω ID = 50A, VGS = 4V - - 0.027 Ω Turn-On Time t (ON) VGS = 5V, RGS = 2.5Ω , RL = 1Ω (Figures 12, 15, 16) - - 100 ns Turn-On Delay Time t D(ON) -1 5- n s Rise Time t r -5 0- n s Turn-Off Delay Time t D(OFF) -5 0- n s Fall Time t f -1 5- n s Turn-Off Time t (OFF) - - 100 ns Total Gate Charge Q G(TOT) VGS = 0 to 10V V DD = 40V, ID = 50A R L = 0.8Ω (Figures 17, 18) - - 140 nC Gate Charge at 5V Q G(5) VGS = 0 to 5V - - 80 nC Threshold Gate Charge Q G(th)V GS = 0 to 1V - - 6 nC Thermal Resistance Junction to Case R θJC - - 1.14 oC/W Thermal Resistance Junction to Ambient R θJA -- 8 0 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage (Note 2) VSD ISD = 50A - - 1.5 V Diode Reverse Recovery Time t rr ISD = 50A, dISD /dt = 100A/µs- - 1 . 2 5 n s NOTES: 2. Pulsed: pulse duration = 300µs maximum, duty cycle = 2%. 3. Repititive rating: pulse width limited by maximum junction temperature. RFP50N05L

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Formative or In Design First Production Full Production Not In Production ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC OPTOPLANAR™ PACMAN™ POP™ FAST FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I 2C™ i-Lo™ ImpliedDisconnect™ Rev. I11 ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT ™ DOME™ EcoSPARK™ E 2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ Power247™ PowerSaver™ PowerTrench QFET  QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™ Across the board. Around the world.™ The Power Franchise Programmable Active Droop™