MT5C1001DCJ-35L/XT

MT5C1001_05 AUSTIN | Alldatasheet

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Technical content

Rev. 2.1 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc.

FEATURES

• High Speed: 20, 25, 35, and 45
• Battery Backup: 2V data retention
• Low power standby
• Single +5V ( +10%) Power Supply
• Easy memory expansion with CE\\ and OE\\ options.
• All inputs and outputs are TTL compatible
• Three-state output OPTIONS MARKING
• Timing 20ns access -20 25ns access -25 35ns access -35 45ns access -45 55ns access -55* 70ns access -70*
• Package(s) Ceramic DIP (400 mil) C No. 109 Ceramic LCC EC No. 207 Ceramic Flatpack F No. 303 Ceramic SOJ DCJ No. 501
• Operating Temperature Ranges Industrial (-40 oC to +85oC) IT Military (-55oC to +125oC) XT
• 2V data retention/low power L *Electrical characteristics identical to those provided for the 45ns access devices. PIN ASSIGNMENT (Top View) AVAILABLE AS MILITARY SPECIFICATIONS
• SMD 5962-92316
• MIL-STD-883 28-Pin DIP (C) (400 MIL) 32-Pin LCC (EC) 32-Pin SOJ (DCJ) 32-Pin Flat Pack (F) GENERAL DESCRIPTION The MT5C1001 employs low power, high-performance silicon-gate CMOS technology. Static design eliminates the need for external clocks or timing strobes while CMOS circuitry reduces power consumption and provides for greater reliability. For flexibility in high-speed memory applications, ASI offers chip enable (CE\\) and output enable (OE\\) capability. These enhancements can place the outputs in High-Z for addi- tional flexibility in system design. Writing to these devices is accomplished when write enable (WE|) and CE\\ inputs are both LOW. Reading is accomplished when WE\\ remains HIGH while CE\\ and OE\\ go LOW. The devices offer a reduced power standby mode when disabled. This allows system designs to achieve low standby power requirements. The “L” version provides an approximate 50 percent reduction in CMOS standby current (I SBC2) over the standard version. All devices operation from a single +5V power supply and all inputs and outputs are fully TTL compatible. 1M x 1 SRAM SRAM MEMORY ARRAY For more products and information please visit our web site at www.austinsemiconductor.com A10 A11 A12 A13 A14 A15 NC A16 A17 A18 A19 Q WE\\ Vss Vcc NC D CE\\ A10 A11 A12 NC A13 A14 A15 NC A16 A17 A18 A19 NC Q WE\\ Vss Vcc NC NC NC D CE\\ A10 A11 A12 NC A13 A14 A15 NC A16 A17 A18 A19 NC Q WE\\ Vss Vcc NC NC NC D CE\\

Rev. 2.1 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc. FUNCTIONAL BLOCK DIAGRAM TRUTH TABLE ROW DECODER 1,048,576-BIT MEMORY ARRAY 512 rows x 2048 columns I/O CONTROL VCC Vss D Q CE\\ WE\\ A15 A14 A13 COLUMN DECODER A2 A1 A16 A0 A17 A18 A19 A10 A9 A12 A11 POWER DOWN MODE CE\\ WE \\ OUTPUT POWER STANDBY H X HIGH-Z STANDBY READ L H Q ACTIVE WRITE L L HIGH-Z ACTIVE PIN ASSIGNMENTS PIN ASSIGNMENT A0-A19 Address Inputs WE\\ Write Enable CE\\ Chip Enable D Data Input Q Data Output NC No Connection VCC +5V Power Supply VSS Ground

Rev. 2.1 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc. ABSOLUTE MAXIMUM RATINGS* *Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. DESCRIPTION CONDITIONS SYMBOL MIN MAX UNITS NOTES Input High (Logic 1) Voltage VIH 2.2 VCC+0.5 V 1 Input Low (Logic 0) Voltage VIL -0.5 0.8 V 1, 2 Input Leakage Current 0V ≤ VIN ≤ VCC IL I -5 5 µA Output Leakage Current Output(s) disabled 0V < VOUT < VCC ILO -5 5 µA Output High Voltage IOH = -4.0mA V OH 2.4 V 1 Output Low Voltage IOL = 8.0mA V OL 0.4 V 1 ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS (-55oC < TC < 125oC; VCC = 5V +10%) CAPACITANCE oC to +150oC oC SYM -20 -25 -35 -45 UNITS NOTES Icc 125 120 115 110 mA 3 Power Supply Current: Standby ISBT1 50 45 40 35 mA ISBT2 25 25 25 25 mA ISBC2 10 10 10 10 mA "L" Version Only ISBC2 5555 m A CE\\ > VCC -0.2V; VCC = MAX VIL < VSS +0.2V VIH > VCC -0.2V; f = 0 Hz CE\\ > VIH; VCC = MAX f = MAX = 1/tRC (MIN) Output Open CE\\ > VIH; All Other Inputs < VIH or > VIH, VCC = MAX f = 0 Hz MAX CONDITIONS CE\\ < VIL; VCC = MAX f = MAX = 1/tRC (MIN) Output Open Power Supply Current: Operating PARAMETER PARAMETER CONDITIONS SYMBOL MAXIMUM UNITS NOTES Input Capacitance (A3-A5, A15 -A17) CI 10 pF 4 Output Capactiance (Q) Co 8 pF 4 Input Capacitance: (All Other Inputs) C I 8p F 4 TA = 25oC, f = 1MHz VCC = 5V

Rev. 2.1 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc. ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (Note 5) (-55oC < TC < 125oC; VCC = 5V +10%) MIN MAX MIN MAX MIN MAX MIN MAX UNITS NOTES READ CYCLE READ cycle time tRC 20 25 35 45 ns Address access time tAA 20 25 35 45 ns Chip Enable access time tACE 20 25 35 45 ns Output hold from address change tOH 3333 n s Chip Enable to output in Low-Z tLZCE 3 3 3 3 ns 4, 6, 7 Chip disable to output in High-Z tHZCE 8 1 01 51 5 n s 4 , 6 , 7 Chip Enable to power-up time tPU 0000 n s 4 Chip disable to power-down time tPD 20 25 35 45 ns 4 WRITE CYCLE WRITE cycle time tWC 20 25 35 45 ns Chip Enable to end of write tCW 15 16 20 25 ns Address valid to end of write tAW 15 16 20 25 ns Address setup time tAS 0000 n s Address hold from end of write tAH 1111 n s WRITE pulse width tWP 15 16 20 25 ns Data setup time tDS 8 1 01 31 5 n s Data hold time tDH 0000 n s Write disable to output in Low-Z tLZWE 3333 n s 7 Write Enable to output in High-Z tHZWE 0 9 01 001 301 3 n s4 , 6 , 7 -35 -45DESCRIPTION -20 SYMBOL -25

Rev. 2.1 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc. AC TEST CONDITIONS NOTES 1. All voltages referenced to V SS (GND). 2. -3V for pulse width < 20ns 3. I CC is dependent on output loading and cycle rates. The specified value applies with the outputs unloaded, and f = 1 Hz. tRC (MIN) 4. This parameter is guaranteed but not tested. 5. Test conditions as specified with the output loading as shown in Fig. 1 unless otherwise noted. 6. t LZCE, tLZWE, tLZOE, t HZCE, tHZOE and tHZWE are specified with CL = 5pF as in Fig. 2. Transition is measured ±200mV typical from steady state voltage, allowing for actual tester RC time constant. 7. At any given temperature and voltage condition, tHZCE is less than tLZCE, and tHZWE is less than tLZWE and tHZOE is less than tLZOE. 8. WE\\ is HIGH for READ cycle. 9. Device is continuously selected. Chip enables and output enables are held in their active state. 10. Address valid prior to, or coincident with, latest occurring chip enable. 11. t RC = Read Cycle Time. 12. Chip enable (CE\\) and write enable (WE\\) can initiate and terminate a WRITE cycle. Fig. 1 Output Load Equivalent Fig. 2 Output Load Equivalent DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only) 123 1 2 3 1 2 3 123 1234 1 23 4 1 23 4 1234 DON’T CARE UNDEFINED LOW Vcc DATA RETENTION WAVEFORM VTH = 1.73VQ 167Ω 30pF VTH = 1.73VQ 167Ω 5pF 12345678 12345678 12345678 12345678 123 1 2 3 1 2 3 123 1234 1 23 4 1 23 4 1234 123456789 123456789 123456789 123456789 123 1 2 3 1 2 3 123 1234 1 23 4 1 23 4 1234 DATA RETENTION MODE VDR > 2V4.5V 4.5V VDR tCDR tR VIH VIL VCC CE\\ DESCRIPTION SYMBOL MIN MAX UNITS NOTES VCC for Retention Data V DR 2- -V VCC = 2V I CCDR 1.0 mA VCC = 3V 1.5 mA Chip Deselect to Data Retention Time tCDR 0 ns 4 Operation Recovery Time tR tRC ns 4, 11 Data Retention Current CE\\ > (VCC - 0.2V) and VIN > (VCC - 0.2V) or < 0.2V CONDITIONS

Rev. 2.1 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc. tAA tOH tRCtRC PREVIOUS DATA VALID VALID DATA VALID ADDRESS DQ READ CYCLE NO. 1 8, 9 tRC tAA tOH tRCtRC CE\\ READ CYCLE NO. 2 7, 8, 10 tRC tPD tPU tHZCEtACE tLZCE DATA VALIDDQ Icc tHZCE tLZCE tACE tPU tPD

Rev. 2.1 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc. NOTE: Output enable (OE\\) is inactive (HIGH). WRITE CYCLE NO. 2 7, 12 (Write Enabled Controlled) WRITE CYCLE NO. 1 12 (Chip Enabled Controlled) tDHtDS tWP1tWP1 tAH tCW tAW tCWtAS tWCtWC HIGH Z DATA VAILD ADDRESS CE\\ WE\\ D Q tWC tAW tAS tCW tAH tWP tDS tDH 123456789012345678901 123456789012345678901 123456789012345678901234567890121234567890 123456789012345678901234567890121234567890 tDH tWP1tWP1 tAS tAW tCW tAH tCW tWCtWC DATA VALID ADDRESS CE\\ WE\\ D Q HIGH-Z tDHtDS tWC tAW tAH tCW tAS tWP 1234 1234 1234 1234 1234567890123456 1 23456789012345 6 1 23456789012345 6 1234567890123456 1234 1234 1234 1234 123456 1 2345 6 1 2345 6 123456 12345678901234567 1 234567890123456 7 12345678901234567 12 11 12345678901234567890123 1 234567890123456789012 3 1234567890123456789012312 123456789 123456789 123456789 tHZWE tLZWE 123 1 23 123 1234 1 23 4 1 23 4 1234 DON’T CARE UNDEFINED

Rev. 2.1 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #109 (Package Designator C) SMD #5962-92316, Case Outline T *All measurements are in inches. c NOTE E 0o to 15 o D Pin 1 e b A Q L MIN MAX A 0.075 0.095 b 0.016 0.020 b1 0.040 0.060 c 0.008 0.012 D 1.386 1.414 E 0.385 0.405 E1 0.390 0.410 e L 0.125 0.175 Q 0.040 0.060 SYMBOL SMD SPECIFICATIONS

0.100 BSC

NOTE: These dimensions are per the SMD. ASI's package dimensional limits may differ, but they will be within the SMD limits.

Rev. 2.1 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #207 (Package Designator EC) SMD# 5962-92316, Case Outline Y *All measurements are in inches. A L e b b1 D E MIN MAX A 0.080 0.100 b 0.022 0.028 b1 0.004 0.014 b2 0.054 0.066 D 0.815 0.835 D1 0.740 0.760 E 0.392 0.408 e L 0.070 0.080 L1 0.090 0.110 SYMBOL SMD SPECIFICATIONS

0.050 BSC

NOTE: These dimensions are per the SMD. ASI's package dimensional limits may differ, but they will be within the SMD limits.

Rev. 2.1 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #303 (Package Designator F) SMD #5962-92316, Case Outline Z *All measurements are in inches. Pin 1 Index 17 16 Bottom View Top View D E1L e b c E A Q MIN MAX A 0.097 0.117 b 0.015 0.019 c 0.004 0.006 D 0.812 0.828 D1 0.745 0.755 E 0.324 0.336 E1 0.405 0.415 e L 0.290 0.310 Q 0.032 0.038 SYMBOL SMD SPECIFICATIONS NOTE: These dimensions are per the SMD. ASI's package dimensional limits may differ, but they will be within the SMD limits.

Rev. 2.1 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc. *All measurements are in inches. ASI Case #501 (Package Designator DCJ) SMD #5962-92316, Case Outline U MECHANICAL DEFINITIONS* A e b D E E2B1 MIN MAX A 0.135 0.153 A2 0.026 0.036 B1 0.030 0.040 b 0.015 0.019 D 0.812 0.828 D1 0.745 0.760 E 0.405 0.415 E1 0.435 0.445 E2 0.360 0.380 e SYMBOL SMD SPECIFICATIONS NOTE: These dimensions are per the SMD. ASI's package dimensional limits may differ, but they will be within the SMD limits.

Rev. 2.1 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc. *AVAILABLE PROCESSES IT = Industrial Temperature Range -40 oC to +85oC XT = Extended Temperature Range -55 oC to +125oC 883C = Full Military Processing -55 oC to +125oC ** OPTIONS L = 2V Data Retention/Low Power

ORDERING INFORMATION

EXAMPLE: MT5C1001EC-45/XT Device Number Package Type Speed ns Options Process Device Number Package Type Speed ns Options Process MT5C1001 C -20 L /* MT5C1001 EC -20 L /* MT5C1001 C -25 L /* MT5C1001 EC -25 L /* MT5C1001 C -35 L /* MT5C1001 EC -35 L /* MT5C1001 C -40 L /* MT5C1001 EC -40 L /* MT5C1001 C -55 L /* MT5C1001 EC -55 L /* MT5C1001 C -70 L /* MT5C1001 EC -70 L /* EXAMPLE: MT5C1001DCJ-70/XT Device Number Package Type Speed ns Options Process Device Number Package Type Speed ns Options Process MT5C1001 F -20 L /* MT5C1001 DCJ -20 L /* MT5C1001 F -25 L /* MT5C1001 DCJ -25 L /* MT5C1001 F -35 L /* MT5C1001 DCJ -35 L /* MT5C1001 F -40 L /* MT5C1001 DCJ -40 L /* MT5C1001 F -55 L /* MT5C1001 DCJ -55 L /* MT5C1001 F -70 L /* MT5C1001 DCJ -70 L /* EXAMPLE: MT5C1001C-20L/IT EXAMPLE: MT5C1001F-25L/883C

Rev. 2.1 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc. ASI TO DSCC PART NUMBER CROSS REFERENCE* ASI Part # SMD Part # MT5C1001EC-20L/883C 5962-9231608MYA MT5C1001EC-20/883C 5962-9231604MYA MT5C1001EC-25L/883C 5962-9231607MYA MT5C1001EC-25/883C 5962-9231603MYA MT5C1001EC-35L/883C 5962-9231606MYA MT5C1001EC-35/883C 5962-9231602MYA MT5C1001EC-45L/883C 5962-9231605MYA MT5C1001EC-45/883C 5962-9231601MYA ASI Part # SMD Part # MT5C1001C-20L/883C 5962-9231608MTA MT5C1001C-20/883C 5962-9231604MTA MT5C1001C-25L/883C 5962-9231607MTA MT5C1001C-25/883C 5962-9231603MTA MT5C1001C-35L/883C 5962-9231606MTA MT5C1001C-35/883C 5962-9231602MTA MT5C1001C-45L/883C 5962-9231605MTA MT5C1001C-45/883C 5962-9231601MTA ASI Part # SMD Part # MT5C1001DCJ-20L/883C 5962-9231608MUA MT5C1001DCJ-20/883C 5962-9231604MUA MT5C1001DCJ-25L/883C 5962-9231607MUA MT5C1001DCJ-25/883C 5962-9231603MUA MT5C1001DCJ-35L/883C 5962-9231606MUA MT5C1001DCJ-35/883C 5962-9231602MUA MT5C1001DCJ-45L/883C 5962-9231605MUA MT5C1001DCJ-45/883C 5962-9231601MUA ASI Part # SMD Part # MT5C1001F-20L/883C 5962-9231608MZA MT5C1001F-20/883C 5962-9231604MZA MT5C1001F-25L/883C 5962-9231607MZA MT5C1001F-25/883C 5962-9231603MZA MT5C1001F-35L/883C 5962-9231606MZA MT5C1001F-35/883C 5962-9231602MZA MT5C1001F-45L/883C 5962-9231605MZA MT5C1001F-45/883C 5962-9231601MZA * ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD.