RFP10P03L

RFP10P03L HARRIS | Alldatasheet

Document overview

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Technical content

Features

• 10A, 30V
• r DS(ON) = 0.200Ω
• Temperature Compensating PSPICE Model
• PSPICE Thermal Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175 oC Operating Temperature Formerly developmental type TA49205.

Description

These products are P-Channel power MOSFETs manufac- tured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives opti- mum utilization of silicon, resulting in outstanding perfor- mance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Symbol Packaging

Ordering Information

RFD10P03LSM TO-252AA 10P03L RFP10P03L TO-220AB F10P03L NOTE: When ordering, use the entire part number. Add the suffix, 9A, to obtain the TO-252AA variant in tape and reel, i.e.RFD10P03LSM 9A.. G D S JEDEC TO-220AB JEDEC TO-251AA JEDEC TO-252AA GATE DRAIN (FLANGE) SOURCE DRAIN SOURCE DRAIN (FLANGE) GATE DRAIN GATE SOURCE DRAIN (FLANGE) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1997 File Number 3515.1 RFD10P03L, RFD10P03LSM, RFP10P03L 10A, 30V, 0.200Ω , Logic Level P-Channel Power MOSFET

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFD10P03L, RFD10P03LSM, RFP10P03L UNITS Drain Current See Figure 5 A 0.43 W W/oC (0.063in (1.6mm) from case for 10s) 300 oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical SpecificationsTC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS ID = 250µA, VGS = 0V -30 - - V Gate Threshold Voltage V GS(TH) VGS = VDS , ID = 250µA -1 - -2 V Zero Gate Voltage Drain Current I DSS VDS = -30V, T C = 25oC- - - 1 µA VGS = 0V T C = 150oC - - -50 µA Gate to Source Leakage Current I GSS VGS =±10V - - ±100 nA Drain to Source On Resistance (Note 1) rDS(ON) ID = 10A, VGS = -5V - - 0.200 Ω ID = 10A, VGS = -4.5V 0.220 Ω Turn-On Time t ON VDD = 15V, ID ≅ 10A R L = 1.5Ω , RGS = 5Ω, VGS = -5V - - 100 ns Turn-On Delay Time t d(ON) -1 5- n s Rise Time t r -5 0- n s Turn-Off Delay Time t d(OFF) -3 5- n s Fall Time t f -2 0- n s Turn-Off Time t OFF - - 80 ns Total Gate Charge Q g(TOT) VGS = 0 to -10V VDD = -24V, ID ≅ 10A, R L = 2.4Ω -2 5 3 0n C Gate Charge at -5V Q g(-5) VGS = 0 to -5V - 13 16 nC Threshold Gate Charge Q g(TH) VGS = 0 to -1V - 1.2 1.5 nC Input Capacitance C ISS VDS = -25V, VGS = 0V f = 1MHz - 1035 - pF Output Capacitance C OSS - 340 - pF Reverse Transfer Capacitance C RSS -3 5- p F Thermal Resistance, Junction to Case R θJC - - 2.30 oC/W Thermal Resistance, Junction to Ambient RθJA RFD10P03L, RFD10P03LSM - - 100 oC/W RFP10P03L 80 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Forward Voltage V SD ISD = -10A - - -1.5 V Reverse Recovery Time t rr ISD = -10A, dISD /dt = -100A/µs- - 7 5 n s NOTE: 1. Pulse Test: Pulse width≤ 300µs, Duty Cycle≤ 2%. RFD10P03L, RFD10P03LSM, RFP10P03L

FIGURE 1. NORMALIZED POWER DISSIPATION vs FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

175 T C–

FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs FIGURE 13. SWITCHING TIME vs GATE RESISTANCE NOTE: Refer to Application Notes AN7254 and AN7260. FIGURE 14. NORMALIZED SWITCHING WAVEFORMS FOR FIGURE 15. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

0.75 BVDSS

0.50 BVDSS

0.25 BVDSS

.SUBCKT RFD10P03L 2 1 3 REV 22 Aug 96 CA 12 8 1.29e-9 CB 15 14 9.90e-10 CIN 6 8 1.01e-9 DBODY 5 7 DBODYMOD DBREAK 7 11 DBREAKMOD DPLCAP 10 6 DPLCAPMOD EBREAK 5 11 17 18 -36.49 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 5 10 8 6 1 EVTHRES 6 21 19 8 1 EVTEMP 6 20 18 22 1 IT 8 17 1 LDRAIN 2 5 1e-9 LGATE 1 9 3.40e-9 LSOURCE 3 7 3.22e-9 MMED 16 6 8 8 MmedMOD MSTRO 16 6 8 8 MstroMOD MWEAK 16 21 8 8 MweakMOD RBREAK 17 18 RBREAKMOD 1 RDRAIN 50 16 RDRAINMOD 68.25e-3 RGATE 9 20 2.54 RSCL1 5 51 RSCLMOD 1e-6 RSCL2 5 50 1e3 RSOURCE 8 7 RSourceMOD 25.00e-3 RVTHRES 22 8 RVTHRESMOD 1 RVTEMP 18 19 RVTEMPMOD 1 S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 22 19 DC 1 ESCL 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*33),5.0))} .MODEL DBREAKMOD D ( RS=2.62e-1 TRS1=1.74e-3 TRS2=-3.81e-6) .MODEL DPLCAPMOD D (CJO=1.46e-10 IS=1e-30 N=10 M=0.50) .MODEL MSTRONGMOD PMOS (VTO=-1.95 KP=11.60 IS=1e-30 N=10 TOX=1 L=1u W=1u) .MODEL MMEDMOD PMOS (VTO=-1.65 KP=1.00 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=2.54) .MODEL RBREAKMOD RES (TC1=9.17e-4 TC2=-2.74e-7) .MODEL RDRAINMOD RES (TC1=6.35e-3 TC2=1.98e-5) .MODEL RSOURCEMOD RES (TC1=0 TC2=0) .MODEL RSCLMOD RES (TC1=2e-3 TC2=0) .MODEL RVTHRESMOD RES (TC1=1.23e-3 TC2=1.97e-6) .MODEL RVTEMPMOD RES (TC1=-1.18e-3 TC2=1.44e-6) .MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=4.80 VOFF=1.80) .MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=1.80 VOFF=4.80) .MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-0.40 VOFF=-3.40) .MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.40 VOFF=-0.40) ENDS For further discussion of the PSPICE model consult A New PSPICE Sub-circuit for the Power MOSFet Featuring Global Temperature Options; authored by William J. Hepp and C. Frank Wheatley. RFD10P03L, RFD10P03LSM, RFP10P03L - + + - RBREAK RVTEMP VBAT RVTHRES IT 17 18 S1A S1B S2A S2B CA CB EGS EDS MWEAK DBODY RSOURCE SOURCE 7 3 LSOURCE RLSOURCE CIN RDRAIN EVTHRES 1621 MMED MSTRO DRAIN LDRAIN RLDRAIN DBREAK DPLCAP ESLC RSLC1 RSLC2 GATE RGATE EVTEMP ESG LGATE RLGATE EBREAK

CTHERM1 7 6 5.00e-7 CTHERM2 6 5 5.35e-4 CTHERM3 5 4 5.50e-4 CTHERM4 4 3 1.75e-3 CTHERM5 3 2 1.25e-2 CTHERM6 2 1 0.45 RTHERM1 7 6 1.00e-2 RTHERM2 6 5 2.05e-2 RTHERM3 5 4 5.39e-2 RTHERM4 4 3 5.45e-1 RTHERM5 3 2 1.01 RTHERM6 2 1 0.50 RFD10P03L, RFD10P03LSM CTHERM1 7 6 5.00e-7 CTHERM2 6 5 5.35e-4 CTHERM3 5 4 5.50e-4 CTHERM4 4 3 1.75e-3 CTHERM5 3 2 1.25e-2 CTHERM6 2 1 0.11 RTHERM1 7 6 1.00e-2 RTHERM2 6 5 2.05e-2 RTHERM3 5 4 5.39e-2 RTHERM4 4 3 5.45e-1 RTHERM5 3 2 1.01 RTHERM6 2 1 0.50 RFD10P03L, RFD10P03LSM, RFP10P03L RTHERM4 RTHERM6 RTHERM5 RTHERM3 RTHERM2 RTHERM1 CTHERM4 CTHERM6 CTHERM5 CTHERM3 CTHERM2 CTHERM1

7 JUNCTION

RFD10P03L, RFD10P03LSM, RFP10P03L TO-220AB

3 LEAD JEDEC TO-220AB PLASTIC PACKAGE

LEAD NO. 1 - GATE LEAD NO. 2 - DRAIN LEAD NO. 3 - SOURCE TERM. 4 - DRAIN EØP Q D H 1 L 60o b 1 2 3 e A c 45o D 1 A 1 TERM. 4 SYMBOL INCHES MILLIMETERS NOTESMIN MAX MIN MAX A 0.170 0.180 4.32 4.57 - A1 0.048 0.052 1.22 1.32 - b 0.030 0.034 0.77 0.86 3, 4 b1 0.045 0.055 1.15 1.39 2, 3 c 0.014 0.019 0.36 0.48 2, 3, 4 D 0.590 0.610 14.99 15.49 - D 1 - 0.160 - 4.06 - E 0.395 0.410 10.04 10.41 - e 0.100 TYP 2.54 TYP 5 e1 0.200 BSC 5.08 BSC 5 H 1 0.235 0.255 5.97 6.47 - J1 0.100 0.110 2.54 2.79 6 L 0.530 0.550 13.47 13.97 - L1 0.130 0.150 3.31 3.81 2 ØP 0.149 0.153 3.79 3.88 - Q 0.102 0.112 2.60 2.84 - NOTES: 1. These dimensions are within allowable dimensions of Rev. J of JEDEC TO-220AB outline dated 3-24-87. 2. Lead dimension and finish uncontrolled in L1. 3. Lead dimension (without solder). 4. Add typically 0.002 inches (0.05mm) for solder coating. 5. Position of lead to be measured 0.250 inches (6.35mm) from bot- tom of dimension D. 6. Position of lead to be measured 0.100 inches (2.54mm) from bot- tom of dimension D. 7. Controlling dimension: Inch. 8. Revision 1 dated 1-93.

RFD10P03L, RFD10P03LSM, RFP10P03L TO-251AA

3 LEAD JEDEC TO-251AA PLASTIC PACKAGE

LEAD NO. 1 - GATE LEAD NO. 2 - DRAIN LEAD NO. 3 - SOURCE TERM. 4 - DRAIN E A c SEATING D L b e 12 3 H 1 A 1 TERM. 4 PLANE SYMBOL INCHES MILLIMETERS NOTESMIN MAX MIN MAX A 0.086 0.094 2.19 2.38 - A1 0.018 0.022 0.46 0.55 3, 4 b 0.028 0.032 0.72 0.81 3, 4 b1 0.033 0.040 0.84 1.01 3 b2 0.205 0.215 5.21 5.46 3, 4 c 0.018 0.022 0.46 0.55 3, 4 D 0.270 0.290 6.86 7.36 - E 0.250 0.265 6.35 6.73 - e 0.090 TYP 2.28 TYP 5 e1 0.180 BSC 4.57 BSC 5 H 1 0.035 0.045 0.89 1.14 - J1 0.040 0.045 1.02 1.14 6 L 0.355 0.375 9.02 9.52 - L1 0.075 0.090 1.91 2.28 2 NOTES: 1. These dimensions are within allowable dimensions of Rev. C of JEDEC TO-251AA outline dated 9-88. 2. Solder finish uncontrolled in this area. 3. Dimension (without solder). 4. Add typically 0.002 inches (0.05mm) for solder plating. 5. Position of lead to be measured 0.250 inches (6.35mm) from bot- tom of dimension D. 6. Position of lead to be measured 0.100 inches (2.54mm) from bot- tom of dimension D. 7. Controlling dimension: Inch. 8. Revision 2 dated 10-95.

RFD10P03L, RFD10P03LSM, RFP10P03L TO-252AA SURFACE MOUNT JEDEC TO-252AA PLASTIC PACKAGE LEAD NO. 1 - GATE LEAD NO. 3 - SOURCE TERM. 4 - DRAIN E D L e b1b A L c SEATING BACK VIEW H 1 A 1 e1 J1 TERM. 4 0.265 MINIMUM PAD SIZE RECOMMENDED FOR SURFACE-MOUNTED APPLICATIONS (6.7) 0.265 (6.7) 0.070 (1.8) 0.118 (3.0) 0.063 (1.6) 0.090 (2.3) 0.063 (1.6) 0.090 (2.3) PLANE SYMBOL INCHES MILLIMETERS NOTESMIN MAX MIN MAX A 0.086 0.094 2.19 2.38 - A1 0.018 0.022 0.46 0.55 4, 5 b 0.028 0.032 0.72 0.81 4, 5 b1 0.033 0.040 0.84 1.01 4 b2 0.205 0.215 5.21 5.46 4, 5 b3 0.190 - 4.83 - 2 c 0.018 0.022 0.46 0.55 4, 5 D 0.270 0.290 6.86 7.36 - E 0.250 0.265 6.35 6.73 - e 0.090 TYP 2.28 TYP 7 e1 0.180 BSC 4.57 BSC 7 H 1 0.035 0.045 0.89 1.14 - J1 0.040 0.045 1.02 1.14 - L 0.100 0.115 2.54 2.92 - L1 0.020 - 0.51 - 4, 6 L2 0.025 0.040 0.64 1.01 3 L3 0.170 - 4.32 - 2 NOTES: 1. These dimensions are within allowable dimensions of Rev. B of JEDEC TO-252AA outline dated 9-88. 2. L3 and b3 dimensions establish a minimum mounting surface for terminal 4. 3. Solder finish uncontrolled in this area. 4. Dimension (without solder). 5. Add typically 0.002 inches (0.05mm) for solder plating. 6. L 1 is the terminal length for soldering. 7. Position of lead to be measured 0.090 inches (2.28mm) from bottom of dimension D. 8. Controlling dimension: Inch. 9. Revision 6 dated 10-96.

All Harris Semiconductor products are manufactured, assembled and tested underISO9000 quality systems certification. Harris Semiconductor products are sold by description only. Harris Semiconductor reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Harris or its subsidiaries. Sales Office Headquarters For general information regarding Harris Semiconductor and its products, call1-800-4-HARRIS NORTH AMERICA Harris Semiconductor P. O. Box 883, Mail Stop 53-210 Melbourne, FL 32902 TEL: 1-800-442-7747 (407) 729-4984 FAX: (407) 729-5321 EUROPE Harris Semiconductor Mercure Center 100, Rue de la Fusee

1130 Brussels, Belgium

TEL: (32) 2.724.2111 ASIA Harris Semiconductor PTE Ltd. No. 1 Tannery Road Cencon 1, #09-01 Singapore 1334 TEL: (65) 748-4200 FAX: (65) 748-0400 SEMICONDUCTOR TO-252AA 16mm TAPE AND REEL 330mm 50mm 13mm 22.4mm 16.4mm 2.0mm 4.0mm 1.75mm 1.5mm DIA. HOLE CL COVER TAPE USER DIRECTION OF FEED 8.0mm 16mm GENERAL INFORMATION 1. USE "9A" SUFFIX ON PART NUMBER. 2. 2500 PIECES PER REEL. 3. ORDER IN MULTIPLES OF FULL REELS ONL Y . 4. MEETS EIA-481 REVISION "A" SPECIFICATIONS. Revision 6 dated 10-96 RFD10P03L, RFD10P03LSM, RFP10P03L