RFP8P08 HARRIS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
IS RFM&P08, RFM8P10, RFP8P08, RFP8P10 Semiconductor Data Sheet October 1998 File Number 1496.1 -8A, -80V and -100V, 0.400 Ohm, Features P-Channel Power MOSFETs + -BA, -80V and -100V These are P-Channel enhancement mode silicon gate * DS(ON) = 0.4002 power field effect transistors designed for applications such . ‘ as switching regulators, switching converters, motor drivers, seeped for Soldering Surf: M relay drivers, and drivers for high power bipolar switching . uidelines for ering urface Mount ‘ a : ‘ Components to PC Boards transistors requiring high speed and low gate drive power. These types can be operated directly from integrated Symbol circuits. Formerly developmental type TA17511 id
Ordering Information
G NOTE: When ordering, include the entire part number. Packaging TO-204AA TO-220AB SOURCE DRAIN DRAIN eS GATE (FLANGE) C+) FY ae) SP SS” Ww ‘ |-— SOURCE DRAIN GATE (FLANGE) 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corporation 1998
RFM8P08, RFM8P10, RFP8P08, RFP8P10 Absolute Maximum Ratings Tc = 25°C, Unless Otherwise Specified RFMsP08 = RFM8P10 =—-RFP8PO8.-=—RFPSP10 ~—UUNITS. Drain to Source Voltage (Note 1)... .ceeee eevee Mpg -80 -100 80 100 v Continuous Drain Current 000... .00 0c ec cceeeeeeeeeeee I 8 8 8 8 A Gate to Source Voltage 0.60. e cee ee eevee Veg 320 220 220 420 v Maximum Temperature for Soldering Package Body for 10s, See Techbrief 334.0022... Tpxg 260 260 260 260 °¢ CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. Ty=25°C to 125°C. Electrical Specifications —T, = 25°C, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS [ win | TP | max | units | Drain to Source Breakdown Voltage BVpss_ | Ip = -250HA, Vag =0 RFM8P08, RFP8PO8 v Zero Gate Voltage Drain Current Vps = Rated BVpss, Vas = 0V | - [| - [2] | Vps=0.8x Rated BVpss, Vas=OVTy= 125°C] - | - | 25 | nA | Gate to Source Leakage Current Vag = +20V, Vpg = 0 | - | - [#100 | na | Drain to Source On Resistance (Note 2) Ip = 8A, Vag = -10V (Figures 6, 7) | - | - [oo] 2 | Drain to Source On Voltage (Note 2) Ip = 8A, Vag = -10V [- | - [32] v | Turn-On Delay Time Ip = 4A, Vpp = SOV. Rg = 50, Vag = -10V | - | 1 | 6 | ns | Rise Ti Ry = 122, 70 Input Capacitance Vas = OV. Vpg = 25V, f= 1MHz | - | - [1500] pF | Figure 9) Thermal Resistance, Junction to Case Rosco | RFM8P08, RFM&P10 | - | - | 125 | cow | Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS | min | tvP | max | units Diode Reverse Recovery Time | tr _ [isp =-4A, disp/at = -100A/us | - | 20] - [ns | NOTES 2. Pulse Test: Pulse Width <300ps, Duty Cycle < 2% 3. Repetitive rating: pulse width is limited by maximum junction temperature. 2 | BARRIS
9 F i 9 1:
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
2 Leer 2 0728Voes 0788Voss///" TN *|* §
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS,
FIGURE 13. GATE CHARGE TEST CIRCUIT FIGURE 14. GATE CHARGE WAVEFORMS