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Technical content

Features

 Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology  225MHz to 1215MHz Instantaneous Bandwidth  Input Internally Matched to 50  28V Operation Typical Performance  Output Power 39.5dBm  Gain 16dB  Power Added Efficiency 60%  -40°C to 85°C Operating Temperature  Large Signal Models Available

Applications

 Class AB Operation for Public Mobile Radio  Power Amplifier Stage for Commercial Wireless Infrastructure  General Purpose Tx Amplification  Test Instrumentation  Civilian and Military Radar DS120418 RFHA1006 225MHz to 1215MHz, 9W GaN Wide- band Power Amplifier RFHA1006S2 2-Piece sample bag RFHA1006SB 5-Piece bag RFHA1006SQ 25-Piece bag RFHA1006SR 100 Pieces on 7” short reel RFHA1006TR7 750 Pieces on 7” reel RFHA1006PCBA-410 Fully assembled evaluation board 225MHz to 1215MHz; 28V operation

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. Absolute Maximum Ratings Parameter Rating Unit Drain Voltage (VD)1 5 0 V Gate Voltage (VG)- 8 t o + 2 V Gate Current (IG)1 0 m A Operational Voltage 32 V RF- Input Power 30 dBm Ruggedness (VSWR) 12:1 Storage Temperature Range -55 to +125 °C Operating Temperature Range (T L) -40 to +85 °C Operating Junction Temperature (TJ)2 0 0 ° C Human Body Model Class 1A MTTF (TJ < 200°C, 95% Confidence Limits)* 3 x 106 Hours Thermal Resistance, RTH (junction to case) measured at TC = 85°C, DC bias only 6° C / W * MTTF - median time to failure for wear-out failure mode (30% IDSS degradation) which is determined by the technology process reliability. Refer to product qualification report for FIT(random) failure rate. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values. Bias Conditions should also satisfy the following expression: PDISS < (TJ - TC)/RTH J - C and TC = TCASE Parameter Specification Unit ConditionMin. Typ. Max. Recommended Operating Conditions Drain Voltage (VDSQ)2 8 3 2 V Gate Voltage (VGSQ)- 5 - 3 - 2 V Drain Bias Current 88 mA RF Input Power (PIN)2 8 d B m Input Source VSWR 10:1 RF Performance Characteristics Frequency Range 225 1215 MHz Small signal 3dB bandwidth Linear Gain 16 dB P OUT = 30dBm Power Gain 14 dB P OUT = 39.5dBm Gain Flatness 3 dB P OUT = 30dBm, 225MHz to 1215MHz Gain Variation with Temperature -0.02 dB/°C Input Return Loss (S11)- 1 1 d B Output Power 39.5 dBm 225MHz to 1215MHz Power Added Efficiency (PAE) 60 % 225MHz to 1215MHz Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. RoHS (Restriction of Hazardous Substances): Compliant per EU Directive 2002/95/EC.

support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. RF Functional Tests [1], [2] VGS(Q) -3.2 V Gain 16.6 dB P IN = 10dBm, 300MHz Power Gain 14.8 15.4 dB P IN = 24dBm, 300MHz Input Return Loss -10 dB Output Power 39.4 dBm Power Added Efficiency (PAE) 55 62.5 % Gain 15 dB P IN = 10dBm, 1100MHz Power Gain 14 14.5 dB P IN = 25dBm, 1100MHz Input Return Loss -9 dB Output Power 39.5 dBm Power Added Efficiency (PAE) 48 53 % [1] Test Conditions: VDSQ = 28V, IDQ = 88mA, CW, T = 25ºC. [2] Performance in a standard tuned test fixture. Parameter Specification Unit ConditionMin. Typ. Max.

support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. Typical Performance in Standard Fixed Tuned Test Fixture Matched for 225MHz to 1215MHz (T = 25°C, unless noted) -18 -15 -12 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 Magnitude, S 11, S22 (dB) Magnitude, S21 (dB) Frequency (MHz) Small Signal s-parameters versus Frequency (VD = 28V, IDQ = 88mA) S21 S11 S22 200 400 600 800 1000 1200 1400 Gain (dB) Frequency (MHz) Gain versus Frequency, Pin = 25dBm (CW , VD = 28V, IDQ = 88mA) 85°C 25°C -40°C 200 400 600 800 1000 1200 1400 Power Added Efficiency, PAE (%) Frequency (MHz) PAE versus Frequency, Pin = 25dBm (CW, VD = 28V, IDQ = 88mA) 85°C 25°C -40°C -16 -14 -12 -10 200 400 600 800 1000 1200 1400 IRL, Input Return Loss (dB) Frequency (MHz) Input Return Loss versus Frequency, Pin = 25dBm (CW, VD = 28V, IDQ = 88mA) 85°C 25°C -40°C -18 -15 -12 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 Input Return Loss (dB) Gain (dB) Frequency (MHz) Gain/IRL versus Frequency, POUT = 39.5dBm (CW, VD = 28V, IDQ = 88mA) Gain IRL 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 Power Added Efficiency, PAE (%) Frequency (MHz) PAE versus Frequency, POUT = 39.5dBm (CW, VD = 28V, IDQ = 88mA)

support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. Typical Performance in Standard Fixed Tuned Test Fixture Matched for 225MHz to 1215MHz (T = 25°C, unless noted) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 Gain (dB) Frequency (MHz) Gain versus Frequency (CW, VD = 28V, IDQ = 88mA) Pout =40dBm Pout =39.5dBm Pout =30dBm POUT POUT POUT 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 Power Added Efficiency, PAE (%) Frequency (MHz) Power Added Efficiency versus Frequency (CW, VD = 28V, IDQ = 88mA) Pout =40dBm Pout =39.5dBm Pout =30dBm POUT POUT POUT -18 -15 -12 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 Input Return Loss, IRL (dB) Frequency (MHz) Input Return Loss versus Frequency (CW, VD = 28V, IDQ = 88mA) Pout =40dBm Pout =39.5dBm Pout =30dBm POUT POUT POUT 22 25 28 31 34 37 40 Gain (dB) POUT, Output Power (dBm) Gain versus Output Power (CW, VD = 28V, IDQ = 88mA) freq=300MHz freq=800MHz freq=1100MHz 22 25 28 31 34 37 40 Power Added Efficiency, PAE (%) POUT, Output Power (dBm) Power Added Efficiency versus Output Power (CW, VD = 28V, IDQ = 88mA) freq=300MHz freq=800MHz freq=1100MHz -18 -15 -12 22 25 28 31 34 37 40 Input Return Loss, IRL (dB) POUT, Output Power (dBm) Input Return Loss versus Output Power (CW, VD = 28V, IDQ = 88mA) freq=300MHz freq=800MHz freq=1100MHz

support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. Typical Performance in Standard Fixed Tuned Test Fixture Matched for 225MHz to 1215MHz (T = 25°C, unless noted) -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 001011 IMD3, Intermodula/g415on Distor/g415on (dBc) Pout, Output Power (W-PEP) IMD3 versus Output Power (2-Tone 1MHz Separa/g415on, VD = 28V, IDQ varied, fc = 1100MHz) 44mA 88mA 132mA 176mA 220mA 13.5 14.5 15.5 16.5 17.5 001011 Gain (dB) Pout, Output Power (W-PEP) Gain versus Output Power (2-Tone 1MHz Separa/g415on, VD = 28V, IDQ varied, fc = 1100MHz) 44mA 88mA 132mA 176mA 220mA

support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. Package Drawing (All dimensions in mm.) Pin Names and Descriptions Pin Name Description 1V G S Gate DC Bias pin 2R F I N RF Input 3R F I N RF Input 4N / C No Connect 5N / C No Connect 6R F O U T / V D S RF Output/Drain DC Bias pin 7R F O U T / V D S RF Output/Drain DC Bias pin 8N / C No Connect Backside GND Ground

support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. Bias Instruction for RFHA1006 Evaluation Board ESD Sensitive Material. Please use proper ESD precautions when handling device s of evaluation board. Evaluation board requires additional external fan cooling. Connect all supplies before powering evaluation board. 1. Connect RF cables at RFIN and RFOUT. 2. Connect ground to the ground supply terminal, and ensure th at both the VG and VD grounds are also connected to this ground terminal. 3. Apply -5V to VG. 4. Apply 28V to VD. 5. Increase V G until drain current reaches 88mA or desired bias point. 6. Turn on the RF input. Typical test data provided is measured to SMA connector reference plane, and include evaluation board / broadband bias network mismatch and losses.

support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. Evaluation Board Schematic Evaluation Board Bill of Materials (BOM) Component Value Manufacturer Part Number C1, C2 2400pF Dielectric Labs Inc C08BL242X-5UN-X0 C11 10000pF Murata Electronics GRM188R71H103KA01D C15 10 F Murata Electronics GRM21BF51C106ZE15L C20 3.3pF ATC 100A3R3BW150XC C25 4.7 F Murata Electronics GRM55ER72A475KA01L R11 47nH Murata Electronics LQG11A47NJ00 L20 3.85nH Coilcraft 0906-4KLB L21 82nH Coilcraft 1008HQ-82NXGLC C21, R21 NOT USED - -

support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. Evaluation Board Layout Device Impedances Frequency (MHz) RFHA1006PCBA-410 (225MHz to 1215MHz) Z Source () Z Load ( ) 225MHz 40.4 + j3.4 40.6 + j14.1 300MHz 41.5 + j4.6 42.8 + j9.3 400MHz 42.8 + j5.5 42.7 + j5.8 950MHz 50.8 + j1.4 24.5 + j11.9 1100MHz 50.1 - j1.4 21.1 + j21.0 1215MHz 49 - j 2.8 19.8 + j27.6 Note: Device impedances reported are the measured evaluation board impedances chosen for a tradeoff of efficiency and peak power performance across the entire frequency bandwidth.

support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. Device Handling/Environmental Conditions RFMD does not recommend operating this device with typical drain voltage applied and the gate pinched off in a high humidity, high temperature environment. GaN HEMT devices are ESD sensitive materials. Please use pr oper ESD precautions when handling devices or evaluation boards. DC Bias The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts VGS the drain of the device is saturated and uncontrolled drain current will destroy the transist or. The gate voltage must be taken to a potential lower than the source voltage to pinch off the device prior to applying the drain voltage, taking care not to exceed the gate voltage maxi - mum limits. RFMD recommends applying VGS = -5V before applying any VDS. RF Power transistor performance capabilities are determined by the applied quiescent drain current. This drain current can be adjusted to trade off power, linearity, and efficiency charac teristics of the device. The recommended quiescent drain current (IDQ) shown in the RF typical performance table is chosen to best represent the operational characteristics for this device, con- sidering manufacturing variations and expected performance. The user may choose alternate conditions for biasing this device based on performance tradeoffs. Mounting and Thermal Considerations The thermal resistance provided as RTH (junction to case) represents only the packaged device thermal characteristics. This is measured using IR microscopy capturing the device under test te mperature at the hottest spot of the die. At the same time, the package temperature is measured using a thermocouple to uching the backside of the die embedded in the device heat sink but sized to prevent the measurement system from impact ing the results. Knowing the dissipated power at the time of the measurement, the thermal resistance is calculated. In order to achieve the advertised MTTF, proper heat removal must be considered to maintain the junction at or below the max- imum of 200°C. Proper thermal design includes consideration of ambient temperature and the thermal resistance from ambi- ent to the back of the package including heat sinking syst ems and air flow mechanisms. Incorporating the dissipated DC power, it is possible to calculate the junction temperature of the device.