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Document overview

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Technical content

Features

■ Advanced GaN HEMT Technology ■ Peak Modulated Power > 120W ■ Advanced Heat-Sink Technology ■ Single Circuit for 865MHz to 960MHz ■ 48V Operation Typical Performance  POUT = 44dBm  Gain = 20dB  Drain Efficiency = 38%  ACP = -33.5dBc  Linearizable to -55dBc with DPD ■ -25°C to 85°C Operating Temperature ■ Optimized for Video Bandwidth and Minimized Memory Effects ■ RF Tested for 3GPP Performance ■ RF Tested for Peak Power Using IS95 ■ Large Signal Models Available

Applications

■ Commercial Wireless Infrastructure ■ High Efficiency Doherty ■ High Efficiency Envelope Tracking RFG1M09090

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS130830 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 11 RFG1M09090 Absolute Maximum Ratings Parameter Rating Unit Drain Voltage (VD) 150 V Gate Voltage (VG) -8 to +2 V Gate Current (IG) 105 mA Operational Voltage 50 V Ruggedness (VSWR) 10:1 Storage Temperature Range -65 to +125 °C Operating Temperature Range (TL) -25 to 85 °C Operating Junction Temperature (TJ) 200 °C Human Body Model Class 1A MTTF (TJ < 200°C, 95% Confidence Limits)* 3E + 06 Hours Thermal Resistance, RTH (junction to case) measured at TC = 85°C, DC bias only 2.7 °C/W Caution! ESD sensitive device. RFMD Green: RoHS compliant per EU Directive 2011/65/EU, halogen free per IEC 61249-2-21, <1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony solder. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. Nominal Operating Parameters Parameter Specification Unit Condition Min Typ Max Recommended Operating Conditions Drain Voltage (VDSQ) 28 48 V Gate Voltage (VGSQ) -4.5 -3.2 -2.0 V Drain Bias Current 300 mA Frequency of Operation 700 1000 MHz Capacitance CRSS 5.4 pF VG = -8V, VD = 0V CISS 77.6 pF COSS 15.1 pF DC Functional Tests IG (OFF) - Gate Leakage 2 mA VG = -8V, VD = 0V ID (OFF) - Drain Leakage 2.5 mA VG = -8V, VD = 48V VGS (TH) - Threshold Voltage -3.6 V VD = 48V, ID = 14mA VDS (on) - Drain Voltage at High Current 0.45 V VG = 0V, ID = 1.5A * MTTF – Median time to failure as determined by the process technology wear-out failure mode. Refer to product qualification report for FIT (random) failure rate. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table below. Bias Conditions should also satisfy the following expression: PDISS < (TJ – TC) / RTH J - C and TC = TCASE Bias Conditions should also satisfy the following expression: PDISS < (TJ – TC) / RTH J-C and TC = TCASE

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS130830 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 3 of 11 RFG1M09090 Parameter Specification Unit Condition Min Typ Max RF Functional Test [1],[2] VGS (Q) -3.2 V VD = 48V, ID = 300mA Gain 18 19.8 dB 3GPP (TM1, 7.5dB PAR at 0.01% CCDF), POUT = 44dBm, f = 960MHz Drain Efficiency 38 39 % Input Return Loss -11 -8 dB Output PAR (CCDF at 0.01%) 5.8 6.1 dB Adjacent Channel Power -33.5 -28.5 dBc Gain 17 19 dB IS95 (9-channel model, 9.8dB PAR at 0.01% CCDF), POUT = 45dBm, f = 960MHz Drain Efficiency 44 46.5 % Output PAR (CCDF at 0.01%) 5 5.8 dB [1] Test Conditions: VDSQ = 48V, IDQ = 300mA, T = 25°C [2] Performance in a standard tuned test fixture

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS130830 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 4 of 11 RFG1M09090 Typical Performance in standard fixed tuned test fixture (T = 25°C, unless noted)

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS130830 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 5 of 11 RFG1M09090 Typical Performance (Cont’d)

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS130830 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 6 of 11 RFG1M09090 Typical Performance (Cont’d)

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS130830 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 7 of 11 RFG1M09090 Evaluation Board Schematic Evaluation Board Bill of Materials (BOM) Item Value Manufacturer Manufacturer’s P/N C1, C4, C12, C13 56pF ATC ATC100B560JT C2, C11 0.6pF to 4.5pF Johanson 27271SL C3, C10 1.8pF ATC ATC100B1R8BT C5, C14 0.1µF Murata GRM32NR72A104KA01L C6, C15 4.7µF Murata GRM55ER72A475KA01L C7 100µF Panasonic ECE-V1HA101UP C8 5.6pF ATC ATC100B5R6CT C9 10pF ATC ATC100B100JT C16 330µF Panasonic EEU-FC2A331 R1 10Ω Panasonic ERJ-8GEYJ100V

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS130830 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 8 of 11 RFG1M09090 Package Drawing (Package Style: Flanged Ceramic, all dimensions in mm) Pin Names and Descriptions Pin Name Description

1 RF IN VGQ Gate - VGQ RF Input

2 RF OUT VDQ Drain - VDQ RF Output

3 GND BASE Source - Ground Base

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS130830 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 9 of 11 RFG1M09090 Bias Instruction for RFG1M09090 Evaluation Board  ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board.  Evaluation board requires additional external fan cooling.  Connect all supplies before powering up the evaluation board. 1. Connect RF cables at RFIN and RFOUT. 2. Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this ground terminal. 3. Apply -5V to VG. 4. Apply 48V to VD. 5. Increase VG until drain current reaches desired 300mA bias point. 6. Turn on RF input.

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS130830 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 10 of 11 RFG1M09090 Evaluation Board Layout Device Impedances Frequency (MHz) Z Source (Ω) Z Load (Ω) 865 10.0 – j2.9 8.4 + j4.3 895 10.0 – j2.1 8.7 + j4.2 930 11.4 – j1.4 8.7 + j4.3 960 12.4 – j1.4 8.6 + j4.5 Note: Device impedances reported are the measured evaluation board impedances chosen for a tradeoff of efficiency, peak power, and linearity performance across the entire frequency bandwidth. *700MHz impedances are based on loadpull measurements; all other impedances are the measured evaluation board impedances.

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS130830 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 11 of 11 RFG1M09090 Device Handling/Environmental Conditions GaN HEMT devices are ESD sensitive materials. Please use proper ESD precautions when handling devices or evaluation boards. GaN HEMT Capacitances The physical structure of the GaN HEMT results in three terminal capacitors similar to other FET technologies. These capacitances exist across all three terminals of the device. The physical manufactured characteristics of the device determine the value of the CDS (drain to source), CGS (gate to source) and CGD (gate to drain). These capacitances change value as the terminal voltages are varied. RFMD presents the three terminal capacitances measured with the gate pinched off (VGS = -8V) and zero volts applied to the drain. During the measurement process, the parasitic capacitances of the package that holds the amplifier is removed through a calibration step. Any internal matching is included in the terminal capacitance measurements. The capacitan ce values presented in the typical characteristics table of the device represent the measured input (CISS), output (COSS), and reverse (CRSS) capacitance at the stated bias voltages. The relationship to three terminal capacitances is as follows: CISS = CGD + CGS COSS = CGD + CDS CRSS = CGD DC Bias The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts VGS the drain of the device is saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken to a potential lower than the source voltage to pinch off the device prior to applying the drain voltage, taking care not to exceed the gate voltage maximum limits. RFMD recommends applying VGS = -5V before applying any VDS. RF Power transistor performance capabilities are determined by the applied quiescent drain current. This drain current can be adjusted to trade off power, linearity, and efficiency characteristics of the device. The recommended quiescent drain current (IDQ) shown in the RF typical performance table is chosen to best represent the operational characteristics for this device, consid ering manufacturing variations and expected performance. The user may choose alternate conditions for biasing this device based on performance trade-offs. Mounting and Thermal Considerations The thermal resistance provided as RTH (junction to case) represents only the packaged device thermal characteristics. This is measured using IR microscopy capturing the device under test temperature at the hottest spot of the die. At the same time, the package temperature is measured using a thermocouple touching the backside of the die embedded in the device heat-sink but sized to prevent the measurement system from impacting the results. Knowing the dissipated power at the time of the measurement, the thermal resistance is calculated. In order to achieve the advertised MTTF, proper heat removal must be considered to maintain the junction at or below the maximum of 200°C. Proper thermal design includes consideration of ambient temperature and the thermal resistance from ambient to the back of the package including heat-sinking systems and air flow mechanisms. Incorporating the dissipated DC power, it is possible to calculate the junction temperature of the device.